IPB054N08N3-G Search Results
IPB054N08N3-G Price and Stock
Infineon Technologies AG IPB054N08N3GATMA1MOSFET N-CH 80V 80A D2PAK |
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IPB054N08N3GATMA1 | Cut Tape | 3,633 | 1 |
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IPB054N08N3GATMA1 | 3,102 |
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IPB054N08N3GATMA1 | 11,000 | 1,000 |
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IPB054N08N3GATMA1 | Cut Strips | 106 | 16 Weeks | 1 |
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IPB054N08N3GATMA1 | Cut Tape | 1 |
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IPB054N08N3GATMA1 | 1 |
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IPB054N08N3GATMA1 | Cut Tape | 949 |
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IPB054N08N3GATMA1 | 14,000 | 17 Weeks | 1,000 |
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IPB054N08N3GATMA1 | 5,000 |
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IPB054N08N3GATMA1 | 11,000 | 1 |
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Infineon Technologies AG IPB054N08N3GXTTrans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB054N08N3GATMA1) |
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IPB054N08N3GXT | Reel | 16 Weeks | 1,000 |
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Infineon Technologies AG IPB054N08N3 GMOSFETs N-Ch 80V 80A D2PAK-2 OptiMOS 3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB054N08N3 G | 898 |
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Infineon Technologies AG IPB054N08N3GOPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB054N08N3G | 482 |
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IPB054N08N3G | 10,600 |
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IPB054N08N3-G Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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IPB054N08N3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 80.0 V; RDS (on) (max) (@10V): 5.4 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 80.0 A; | Original | |||
IPB054N08N3GATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 80A TO263-3 | Original |