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    IPB180N06S4-H1 Search Results

    IPB180N06S4-H1 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB180N06S4-H1
    		Infineon Technologies Single: N-Channel 60V MOSFETs; Package: PG-TO263-7; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 1.7 mOhm; ID (max): 180.0 A; RthJC (max): 0.6 K/W; Original PDF 176.5KB 9
    IPB180N06S4H1ATMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 180A TO263-7 Original PDF 176.95KB
    IPB180N06S4H1ATMA2
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 180A TO263-7 Original PDF 176.95KB
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    IPB180N06S4-H1 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB180N06S4H1ATMA2

    MOSFET N-CH 60V 180A TO263-7
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () IPB180N06S4H1ATMA2 Cut Tape 5,567 1
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    IPB180N06S4H1ATMA2 Digi-Reel 5,567 1
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    IPB180N06S4H1ATMA2 Reel 4,000 1,000
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    Avnet Americas IPB180N06S4H1ATMA2 Reel 53 Weeks, 1 Days 1,000
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    Mouser Electronics IPB180N06S4H1ATMA2 3,412
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    Verical () IPB180N06S4H1ATMA2 7,000 1,000
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    IPB180N06S4H1ATMA2 3,000 1,000
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    IPB180N06S4H1ATMA2 1,000 14
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    Arrow Electronics () IPB180N06S4H1ATMA2 7,000 9 Weeks 1,000
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    IPB180N06S4H1ATMA2 3,000 9 Weeks 1,000
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    Newark IPB180N06S4H1ATMA2 Cut Tape 948 1
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    Rochester Electronics IPB180N06S4H1ATMA2 14 1
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    Chip One Stop IPB180N06S4H1ATMA2 Cut Tape 1,000 0 Weeks, 1 Days 1
    • 1 $3.80
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    EBV Elektronik IPB180N06S4H1ATMA2 10 Weeks 1,000
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    Vyrian IPB180N06S4H1ATMA2 3,490
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    Win Source Electronics IPB180N06S4H1ATMA2 3,680
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    Infineon Technologies AG IPB180N06S4H1ATMA1

    MOSFET N-CH 60V 180A TO263-7
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPB180N06S4H1ATMA1 Reel
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    Rochester Electronics IPB180N06S4H1ATMA1 14 1
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    Infineon Technologies AG IPB180N06S4H1ATMA2.

    Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:180A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:250W; No. Of Pins:7Pins Rohs Compliant: Yes |Infineon IPB180N06S4H1ATMA2.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IPB180N06S4H1ATMA2. Reel 1,000
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    Infineon Technologies AG IPB180N06S4-H1

    POWER FIELD-EFFECT TRANSISTOR, 180A I(D), 60V, 0.0017OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IPB180N06S4-H1 21
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    Chip 1 Exchange IPB180N06S4-H1 1,000
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    Win Source Electronics IPB180N06S4-H1 1,570
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    • 100 $3.39
    • 1000 $3.04
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