IPD110N12N3 G Search Results
IPD110N12N3 G Price and Stock
Infineon Technologies AG IPD110N12N3GATMA1MOSFET N-CH 120V 75A TO252-3 |
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IPD110N12N3GATMA1 | Digi-Reel | 3,829 | 1 |
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IPD110N12N3GATMA1 | Ammo Pack | 19 Weeks | 1 |
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IPD110N12N3GATMA1 | 20,756 |
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IPD110N12N3GATMA1 | 10,396 | 35 |
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IPD110N12N3GATMA1 | 7,500 | 16 Weeks | 2,500 |
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IPD110N12N3GATMA1 | Cut Tape | 30,193 | 1 |
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IPD110N12N3GATMA1 | 1,890 |
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IPD110N12N3GATMA1 | 5,242 | 1 |
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IPD110N12N3GATMA1 | 2,410 |
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IPD110N12N3GATMA1 | Reel | 30,000 | 2,500 |
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IPD110N12N3GATMA1 | Cut Tape | 10,396 | 0 Weeks, 1 Days | 1 |
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IPD110N12N3GATMA1 | 17 Weeks | 2,500 |
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IPD110N12N3GATMA1 | 14,191 |
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IPD110N12N3GATMA1 | 16,670 |
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Infineon Technologies AG IPD110N12N3GBUMA1MOSFET N-CH 120V 75A TO252-3 |
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IPD110N12N3GBUMA1 | Cut Tape | 1 |
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IPD110N12N3GBUMA1 | 143 Weeks | 2,500 |
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Infineon Technologies AG IPD110N12N3 GTrans MOSFET NCH 120V 75A 3Pin TO252 TR (Alt: SP000674466) |
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IPD110N12N3 G | 143 Weeks | 2,500 |
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Infineon Technologies AG IPD110N12N3GN-channel, normal level |
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IPD110N12N3G | 16,680 |
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IPD110N12N3 G Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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IPD110N12N3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 120.0 V; RDS (on) (max) (@10V): 11.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 75.0 A; | Original | 327.77KB | 10 | |||
IPD110N12N3GATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 120V 75A TO252-3 | Original | 574.21KB | ||||
IPD110N12N3GBUMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 120V 75A TO252-3 | Original | 580.17KB |
IPD110N12N3 G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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110N12NContextual Info: IPD110N12N3 G IPS110N12N3 G OptiMOSTM3Power-Transistor Features Product Summary • N-channel, normal level VDS 120 V • Excellent gate charge x R DS on product (FOM) RDS(on),max 11 mW ID 75 A • Very low on-resistance R DS(on) • 175 °C operating temperature |
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IPD110N12N3 IPS110N12N3 IEC61249-2-21 PG-TO251-3 PG-TO252-3 110N12N 110N12N | |
110N12N
Abstract: JESD22 mj 4310 IPD110N12N3G
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IPD110N12N3 IPS110N12N3 PG-TO251-3 PG-TO252-3 110N12N 110N12N JESD22 mj 4310 IPD110N12N3G | |
IPD110N12N3 GContextual Info: IPD110N12N3 G IPS110N12N3 G TM3Power-Transistor Features Product Summary R 492?6=?@C>2==6G6= V ;I *( K R ;I"\[#$>2I ) Z I; /- 7 R I46=6?E82E6492C86IR ;I"\[#AC@5F4E!)' R/6CJ=@H@? C6D:DE2?46R ;I"\[# |
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IPD110N12N3 IPS110N12N3 492C86à E2C86Eà E96CH IPD110N12N3 G | |
marking 6d
Abstract: IPD110N12N3 G
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IPD110N12N3 IPS110N12N3 8976BF6 marking 6d IPD110N12N3 G | |
PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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