| IPI120N06S4-H1 |
|
Infineon Technologies
|
Single: N-Channel 60V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS -T2; VDS (max): 60.0 V; RDS (on) (max) (@10V): 2.4 mOhm; ID (max): 120.0 A; RthJC (max): 0.6 K/W; |
Original |
PDF
|
170.58KB |
9 |
| IPI120N06S4H1AKSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 120A TO262-3 |
Original |
PDF
|
171.61KB |
|
| IPI120N06S4H1AKSA2 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH TO262-3 |
Original |
PDF
|
171.61KB |
|
