| IPI80N06S2-07 |
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Infineon Technologies
|
Single: N-Channel 55V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 6.6 mOhm; ID (max): 80.0 A; RthJC (max): 0.6 K/W; |
Original |
PDF
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158.77KB |
8 |
| IPI80N06S207AKSA1 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO262-3 |
Original |
PDF
|
155.09KB |
|
| IPI80N06S207AKSA2 |
|
Infineon Technologies
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO262-3 |
Original |
PDF
|
160.19KB |
|
