IPOS 150 Search Results
IPOS 150 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TGA4816Contextual Info: TGA4816 10Gb/s Differential TIA Key Features and Performance • Preliminary Measured Performance • • • • • • • • Bias Conditions: VPOS=3.3V, IPOS=60mA 1500Ω Single-Ended Transimpedance >10GHz 3dB Bandwidth 1.6mApp Maximum Input Current 8pA/ √Hz Input Noise Current |
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TGA4816 10Gb/s 10GHz OC-192/STM-64 TGA4816 | |
ipos 150
Abstract: TGA4816 Photodiode, 10ghz
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10Gb/s TGA4816 10GHz ipos 150 TGA4816 Photodiode, 10ghz | |
Contextual Info: Advance Product Information November 16, 2004 10Gb/s Differential TIA TGA4816-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=60mA CPD = 0.2 pF RPD = 15 Ohm 66 -3 Differential TZ |
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10Gb/s TGA4816-EPU 10GHz OC-192/STM-64 | |
Contextual Info: Advance Product Information August 27, 2003 10Gb/s Differential TIA TGA4816-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=60mA CPD = 0.2 pF RPD = 15 Ohm 66 -3 Differential TZ |
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10Gb/s TGA4816-EPU 10GHz OC-192/STM-64 | |
TGA4815-EPUContextual Info: Advance Product Information January 16, 2004 10Gb/s Differential TIA TGA4815-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=80mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ |
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10Gb/s TGA4815-EPU 10GHz TGA4815-EPU | |
Contextual Info: Advance Product Information September 23, 2003 10Gb/s Differential TIA TGA4815-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=80mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ |
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10Gb/s TGA4815-EPU 10GHz OC-192/STM-64 | |
TGA4815
Abstract: TRANSIMPEDANCE mmic
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10Gb/s TGA4815 10GHz TGA4815 TRANSIMPEDANCE mmic | |
Contextual Info: Advance Product Information November 16, 2004 10Gb/s Differential TIA TGA4815-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=80mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ |
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10Gb/s TGA4815-EPU 10GHz OC-192/STM-64 -15cient | |
Contextual Info: Advance Product Information August 27, 2003 10Gb/s Differential TIA TGA4815-EPU Key Features and Performance • • • • • • • • • Preliminary Measured Performance Bias Conditions: VPOS=3.3V, IPOS=60mA CPD = 0.2 pF RPD = 15 Ohm 78 -3 Differential TZ |
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10Gb/s TGA4815-EPU 10GHz OC-192/STM-64 | |
TGA4816-EPU
Abstract: ipos 150
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10Gb/s TGA4816-EPU 10GHz TGA4816-EPU ipos 150 | |
PA6-GB20
Abstract: gf10 connector GT280 PA6 equivalent GT 12 AR gf10 gb20 GT 13 AR PA6-GB20-GF10 PA6-GB20GF10 1451 er
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11DEO1 11DE01 PA6-GB20 gf10 connector GT280 PA6 equivalent GT 12 AR gf10 gb20 GT 13 AR PA6-GB20-GF10 PA6-GB20GF10 1451 er | |
LT1262
Abstract: ipos 150 1.8 c13 INEG ipos 150 LT1575 LT1577 VN2222L
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LT1575/LT1577 1575/LT1577 LTC1553L LT1573 LT1580 LT1585-1 15757f LT1262 ipos 150 1.8 c13 INEG ipos 150 LT1575 LT1577 VN2222L | |
LT1262Contextual Info: LT1575/LT1577 Ultrafast Transient Response, Low Dropout Regulators Adjustable and Fixed U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ UltraFastTM Transient Response Eliminates Tantalum and Electrolytic Output Capacitors FET RDS ON Defines Dropout Voltage |
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LT1575/LT1577 1575/LT1577 LTC1553L LT1573 LT1580 LT1585-1 15757f LT1262 | |
ipos 150
Abstract: pin diagram of MOSFET 5040 intel core i3 MOTHERBOARD CIRCUIT diagram LT1585-1 INEG LT1575 LT1577 VN2222L NTHS-1206
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LT1575/LT1577 1575/LT1577 LTC1435 LTC1552 LT1580 LT1585-1 ipos 150 pin diagram of MOSFET 5040 intel core i3 MOTHERBOARD CIRCUIT diagram INEG LT1575 LT1577 VN2222L NTHS-1206 | |
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lmk212bj226Contextual Info: AMS2115 FAST TRANSIENT RESPONSE LDO CONTROLLER General Description Features The AMS2115 is a single IC controller that drives an external N Channel MOSFET as a source follower to produce a fast transient response, low dropout voltage regulator. The fast transient load |
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AMS2115 AMS2115 LMK212BJ226MG-T 007TR CRCW0603xxKxFKEA CRCW060310K0FKEA AMS2115S lmk212bj226 | |
low voltage mosfet switch 3 amp
Abstract: LQLB2016T100M 3150 mosfet LQLB2016T100 ipos 150 LQH32CN100K23K ipos 150 1.8 200 Ampere pmosfet power transistor 3150F 1N4148 75V 150mA Diodes
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LT3150 300mV T0220-5, OT-223, LTC3411 LTC3412 TSSOP16E 3150f low voltage mosfet switch 3 amp LQLB2016T100M 3150 mosfet LQLB2016T100 ipos 150 LQH32CN100K23K ipos 150 1.8 200 Ampere pmosfet power transistor 3150F 1N4148 75V 150mA Diodes | |
Contextual Info: M MCP18480 -48V Hot Swap Controller Features Description • Allows safe board removal and insertion from a live backplane • Accurate <1.5% internal voltage reference for fault detection and precision timing • Programmable foldback current limiting • Programmable circuit breaker current limiting |
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MCP18480 MCP18480 DK-2750 D-85737 DS20091B-page | |
LDO regulator 51A
Abstract: MOSFET vn2222l
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LT3150 300mV T0220-5, OT-223, LTC3411 LTC3412 TSSOP16E 3150f LDO regulator 51A MOSFET vn2222l | |
ipos 150
Abstract: ipos 150 1.8 AMS2115 AMS2115P 2115X
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AMS2115 AMS2115 254mm) ipos 150 ipos 150 1.8 AMS2115P 2115X | |
MA020
Abstract: MA021 MD022C MD012A MD014B
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MCP18480 MCP18480 current778-366 DS20091C-page MA020 MA021 MD022C MD012A MD014B | |
md012a
Abstract: MA03-2 transorb MD001A MA032 MA04-2 ipos korea MA011 MCP18480 MD001
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MCP18480 MCP18480 DK-2750 D-85737 DS20091B-page md012a MA03-2 transorb MD001A MA032 MA04-2 ipos korea MA011 MD001 | |
1239AS
Abstract: 1239AS-H-4R7M 1239AS-H AGND56 qfn-12 3X3
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TPS65133 SLVSC01 TPS65133 1239AS 1239AS-H-4R7M 1239AS-H AGND56 qfn-12 3X3 | |
Contextual Info: AMS2115 FAST TRANSIENT RESPONSE LDO CONTROLLER General Description Features The AMS2115 is a single IC controller that drives an external N Channel MOSFET as a source follower to produce a fast transient response, low dropout voltage regulator. The fast transient load |
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AMS2115 AMS2115 Si4160 LMK212BJ226MG-T 007TR CRCW0603xxKxFKEA CRCW060310K0FKEA | |
smartphoneContextual Info: TPS65132 www.ti.com SLVSBM1A – JUNE 2013 – REVISED AUGUST 2013 Dual Output LCD Bias for Smartphones and Tablets Check for Samples: TPS65132 FEATURES 1 • • • • • • • • • SIMO Single-Inductor Multiple-Output Regulator Technology >85% Efficiency at IOUT > 10mA |
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TPS65132 1000x smartphone |