IPPON Search Results

Contextual Info: \| CHNEM ippon f AMORPHOUS CHOKE COIL I-CON| Refe rence sa m p le ^ Di D?: Maximum outer diameter W : Maximum width Total lead length (L )*: 30mm (+3mm, -3mm) Soldering boundary ( a ) ': 0mm (+4mm -omm) 'T he bottom of the core or coil (v)is defined as the base surface.

NIPPON CAPACITORS

Abstract: SM6104 SM6104P SM6104P1 SM6104S SM6104S1
Contextual Info: f\JPC SM6104 6-BIT FLASH A/D CONVERTER N IPPON PREC ISION C IR C UITS INC. • OVERVIEW The SM6104 is a 6-bit flash parallel A/D converter based on NPC's proprietary molybedenum gate CMOS technology. It features a high-speed conversion of 20 Msps, and a low current consumption of

YM3623B

Abstract: Nippon Gakki 2000P
Contextual Info: YAMAHAL o i YM 3623B D ig ita l Audio I n t e r f a c e Receiver DIR • o u t l in e The YM3623B is an LSI device, developed by N ippon G akki, which receives and plays back the Digital Audio Interface Form at signals that are transferred between digital audio equipment.

Nippon sxe

Abstract: NFC15-48S05 NFC15-48D15 Nippon Chemi-Con sxe capacitor NFC15-48D12 NFC15 VDE0805
Contextual Info: ARTESON T E C H N O L O W G I NFC15 SERIES E Single and dual output S • • • • • • • • The NFC15 series o f DC/DC converters are economical 15 Watt, high efficiency, hybrid DC/DC converters that accept input voltages ranging from 20VDC to 72VDC. A constant efficiency of 80% is maintained over the entire input voltage

Contextual Info: HN62454BN Series 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-470A Z Rev. 1.0 May. 21, 1996 Description The HN62454BN is a 262144 words by 16 bits CMOS Mask Programmable ROM, featuring page access mode to get very high speed 4-word serial access. A high speed access of 85/100 ns (max) and page

Contextual Info: 2SK2568 Silicon N-Channel MOS FET HITACHI Preliminary November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter Outline Flange

Contextual Info: 2SK2426 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline

Contextual Info: HVC375B Variable Capacitance Diode for VCO HITACHI ADE-208-625 Z Rev.O Feb. 1, 1999 Features • Low tolerance. • Low series resistance. (rs= l.li2 max) • Good C-V linearity. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information

tc8835

Contextual Info: TC8807N/F-0900-1 TOSHIBA 1. ü02mim 133 «tosb • UC/UP bME D GENERAL T C 8807N /I’-0900 is a stan d ard tPARCOR voice synthesis LSI for T elephone A nsw ering m achines and Voice Clock using the E nglish m ale voice. The software of in te rn a l 4b it CPU (TMP42C70) has

PJ37

Abstract: motorola assembler L2N3904 00FF M146805 M6805 M68HC05 MC68HC05 Nippon capacitors MC68HC05P8
Contextual Info: MC68HC05P8/D MC68HC05P8 TECHNICAL DATA M MOTOROLA MC68HC05P8 HCMOS MICROCONTROLLER UNIT Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Motorola does not assume any liability arising out of

Contextual Info: Order this data sheet by LM2935T/D MOTOROLA SEMICONDUCTOR LM2935T TECHNICAL DATA P r o d u c t P re v ie w LOW DROPOUT DUAL REGULATOR LOW DROPOUT DUAL REGULATOR SILICON MONOLITHIC INTEGRATED CIRCUIT The LM 2935 is a dual positive 5.0 volt low dropout voltage

Contextual Info: 2SK2425 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter. Outline

Contextual Info: HN62454B Series 262144-word x 16-bit CMOS Mask Programmable ROM HITACHI ADE-203-471A Z Rev. 1.0 May. 10, 1996 Description The HN62454B is a 262144 words by 16 bits CMOS Mask Programmable ROM. A high speed access of 85/100 ns (max) is the most suitable to the system using a high speed micro-computer by 16 bits.

1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE

Contextual Info: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699B Z Rev.2.0 Jun. 5, 1997 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1 pieces

HAT1046R

Contextual Info: HAT1046R Silicon P Channel Power MOS FET Power Switching HITACHI 2nd. Edition January 1999 Features • Low on-resistance • R Ds onr 3 0 m ii t o ( at v g s = -4V C apable o f -4 V gate drive • Low drive current • H igh density m ounting Outline SOP-8

Hitachi PF0030

Contextual Info: PF0030 Series MOS FET Power Amplifier HITACHI Features • High stability: Load VSWR = 20 : 1 • Low power control current: 400 jlA • Thin package: 5 mmt Ordering Information Type No Operating Frequency A pplica tio n PF0030 824 to 849 MHz AMPS PF0032 872 to 905 MHz

Contextual Info: 2SC2613 K Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline TO -220AB 2. Collector (Flange) 3. Em itter 2 o Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage VCB0

lvt74

Contextual Info: HB56AW873E Series 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-685A Z Rev. 1.0 Nov. 28, 1996 Description The HB56AW873E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: HM5118160BI Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-580A Z Rev. 1.0 May. 20, 1996 Description The Hitachi HM5118160BI is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM5118160BI offers

Contextual Info: H B 56S872E S N -6B /7B /8B 8,388,608-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8 byte DIMM HITACHI ADE-203-611 Z Preliminary Rev. 0.0 Jun. 14, 1996 Description The HB56S872ESN belongs to 8 Byte DIMM (Dual In-line Memory M odule) fam ily, and has been

Contextual Info: MOTOROLA Order th is docum ent by MC74LCX244/D SEMICONDUCTOR TECHNICAL DATA Low -Voltage CMOS O ctal Buffer M C74LCX244 With 5V -Tolerant Inputs and Outputs 3 -S ta te , N on-Inverting LCX The MC74LCX244 is a high performance, non-inverting octal buffer

Contextual Info: M O r O H O L A MC54/74F125 MC54/74F126 3-STATE QUAD BUFFERS • High Impedance NPN Base Inputs for Reduced Loading QUAD BUFFERS, 3-STATE FAST SHOTTKY TTL MC54/74F125 VCC 40 4A 4Y 30 3A 3Y 14 13 12 11 10 9 8 J SUFFIX CERAMIC CASE 632-08 14 1 2 1C 1A 3 4

Contextual Info: 2SK2174 L , 2SK2174(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • No Secondary Breakdown • Suitable for Switching regulator, DC-DC converter Outline 2SK2174(L), 2SK2174(S)

Contextual Info: 2SK3141 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-680B Z 3rd. Edition February 1999 Features • Low on-resistance • • R DS(on) = 4 m ii typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline Absolute Maximum Ratings (Ta = 25 °C)