TRGP10M
Abstract: IR 10D 1000 v fast recovery rectifier diodes
Text: TRGP10A~TRGP10M 快恢復整流二極管 Fast Recovery Rectifier Diodes •特徵 Features 1.0A ● IF（AV） ● VRRM 50V~1000V ● trr①≤0.15 s，0.25μs，0.5μs ● 高可靠性 High reliability ■外形尺寸和印記 Outline Dimensions and Mark
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TRGP10A
TRGP10M
Curre10
TRGP10M
IR 10D
1000 v fast recovery rectifier diodes
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ML-370
Abstract: DM-305A 4410M rms225 BECKMAN 3020b digital capacitance meter
Text: Test Equipment COMPLETE LINE Analog Multimeter AM-10 • Pocket Size - Very Economical • 6 Functions, 10 Ranges • ±4% Basic DC Accuracy • 2” Mirrored Scale • 2KΩ/V AC & DC Input Sensitivity • Fuse and Diode Protection • DC Current • Resistance
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AM-10
90-Day
ML-10)
DM-3010.
ML-370
DM-4000A.
DM-6510.
DM250.
ML-375
ML-370
DM-305A
4410M
rms225
BECKMAN 3020b
digital capacitance meter
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CHBD4004SPT
Abstract: T-75 High voltage diode
Text: CHENMKO ENTERPRISE CO.,LTD CHBD4004SPT SURFACE MOUNT SWITCHING DIODE VOLTAGE 400 Volts CURRENT 225 mAmpere APPLICATION * Ultra high speed switching FEATURE .017 0.42 .040 (1.02) .035 (0.88) * Maximum total power disspation is 350mW. * Peak forward current is 625mA.
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CHBD4004SPT
350mW.
625mA.
OT-23
OT-23)
10D1000
CHBD4004SPT
T-75 High voltage diode
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXRE1004 SOT23 MICROPOWER 4µA 1.22V VOLTAGE REFERENCE Description Pin Assignments The ZXRE1004 is a 1.22 volt bandgap reference circuit designed for ultra low current operation, typically 4 A. The device is available in a SOT23 surface mount package
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ZXRE1004
ZXRE1004
20ppm/Â
DS32172
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diode zener 27c
Abstract: MTZ15B MTZ 30 10D-9 27C zener lz 04
Text: MTZ Series SILICON EPITAXIAL PLANAR ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range
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IR 10D 8A
Abstract: ZXRE1004DFTA ZXRE1004EFTA LT1004 REF1004 ZXRE1004 all diodes ratings mark a1 sot23 maximum current rating of diodes sot23 markings
Text: A Product Line of Diodes Incorporated ZXRE1004 SOT23 MICROPOWER 4µA 1.22V VOLTAGE REFERENCE Description Pin Assignments The ZXRE1004 is a 1.22 volt bandgap reference circuit designed for ultra low current operation, typically 4 A. The device is available in a SOT23 surface mount package
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ZXRE1004
ZXRE1004
20ppm/
DS32172
IR 10D 8A
ZXRE1004DFTA
ZXRE1004EFTA
LT1004
REF1004
all diodes ratings
mark a1 sot23
maximum current rating of diodes
sot23 markings
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marking code 6C8
Abstract: zener 5A1 zener 10D zener 5c1 zener 9c1 DIODES 33D Marking 4c7 4C7 marking code zener 4c3
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
marking code 6C8
zener 5A1
zener 10D
zener 5c1
zener 9c1
DIODES 33D
Marking 4c7
4C7 marking code
zener 4c3
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MTZ 208
Abstract: MTZ 30 diode zener 27c 10D-9 27C zener diode zener 33c IR 10D 8A lz 65 mtz24c MTZ 5.6A
Text: MTZ Series SILICON EPITAXIAL PLANAR ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. 1.FEATURES RGP10A thru RGP10M Glass Passivated Junction Fast Switching Rectifiers * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High temperature metallurgically bonded construction Reverse Voltage 50 to 1000V
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RGP10A
RGP10M
MIL-S-19500
DO-41,
DO-41
DO-15
DO-201AD
26/tape
DO-201ADç
DO-201AD
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zener 4c3
Abstract: zener 5c1 ZENER CODE 51b zener 2a7 4C7 marking code zener 10D zener 4B7 20D22A DIODES 33D marking code 6C8
Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF
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500mW
2002/95/EC
MIL-STD-750,
2011-REV
RB500V-40
zener 4c3
zener 5c1
ZENER CODE 51b
zener 2a7
4C7 marking code
zener 10D
zener 4B7
20D22A
DIODES 33D
marking code 6C8
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egp 100
Abstract: A-405 EGP10A EGP10M
Text: LESHAN RADIO COMPANY, LTD. EGP10A thru EGP10M FEATURES Glass Passivated Junction Fast Switching Rectifiers * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High temperature metallurgically Reverse Voltage 50 to 1000V Forward Current 1.0A
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EGP10A
EGP10M
MIL-S-19500
DO-41,
DO-201AD
DO-41
DO-15
26/tape
egp 100
A-405
EGP10M
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A-405
Abstract: UGP10A UGP10K
Text: LESHAN RADIO COMPANY, LTD. UGP10A thru UGP10K FEATURES Glass Passivated Junction Uitra Fast Rectifiers * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Reverse Voltage 50 to 800V Forward Current 1.0A * High temperature metallurgically
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UGP10A
UGP10K
MIL-S-19500
DO-41,
DO-201AD
DO-41
DO-15
26/tape
A-405
UGP10K
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zener 6c2
Abstract: zener 4c3 zener 5c1 zener 5A6 zener 5A1 zener 2a7 zener 9A1 4C3 zener 4C7 marking code 5a6 zener
Text: GLZ2.0 A (B)(D) THRU GLZ56(A)(B)(C) SURFACE MOUNT ZENER DIODES MINI-MELF SOD-80/DO-213AA Planar Die construction 500mV Power Dissipationie construction Ieally Sulted for Automated Assembly Processes 0.146(3.70) 0.130(3.30) 0.063(1.60) 0.055(1.40) 0.020(0.50)
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GLZ56
OD-80/DO-213AA
500mV
MIL-STD-202E
zener 6c2
zener 4c3
zener 5c1
zener 5A6
zener 5A1
zener 2a7
zener 9A1
4C3 zener
4C7 marking code
5a6 zener
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ZENER CODE 51b
Abstract: 47C 36a 10D-9 27C zener diode Lz 99 diode zener 30c Z 51a zener
Text: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range
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16tance
ZENER CODE 51b
47C 36a
10D-9
27C zener
diode Lz 99
diode zener 30c Z
51a zener
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ZJ33B
Abstract: 27C zener diode zener 30c Z 51a zener
Text: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range
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GBU10A
Abstract: IR 10D DIODE
Text: SIYU R GBU10A . GBU10M Single-phase Silicon Bridge Rectifier 塑封硅整流桥堆 反向电压 50-1000V 正向电流 10 A Reverse Voltage 50 to 1000V Forward Current 10 A 特征 Features GBU Low reverse leakage •反向漏电流低 High forward surge capability
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GBU10A
GBU10M
0---1000V
GBU10A
IR 10D DIODE
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10dl2cz
Abstract: 10FL2CZ z47a diode mark L2C
Text: TOSHIBA 10D L2C Z47A ,10FL2C Z47A ,10G L2C Z47A TO SHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 10DL2CZ47A, 10FL2CZ47A, 10GL2CZ47A SW ITCHING TYPE POWER SUPPLY APPLICATIO N CONVERTER & CHOPPER APPLICATIO N • Repetitive Peak Reverse Voltage
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10FL2C
10DL2CZ47A,
10FL2CZ47A,
10GL2CZ47A
10DL2CZ47A
10FL2CZ47A
10GL2CZ47A
10GL2CZ47A)
10dl2cz
10FL2CZ
z47a
diode mark L2C
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AAY43
Abstract: Q60101-Y43 ring modulator diode germanium aay27
Text: AAY43 Not for new developm ent Germanium ring modulator diode quartet Diode quartet AAY 43 is suitable for use as a modulator or demodulator in carrier frequency and single-side-band systems. The quartet consists of four single diodes Type AAY 27 cast into a plastic housing. The follow ing data apply to the individual
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AAY43
Q60101-Y43
AAY43
Q60101-Y43
ring modulator
diode germanium
aay27
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diode byt 45
Abstract: 12P-1000
Text: r z 7 ^ 7# S C S -T H O M S O N « ^ l y E C T ^ M O S _ B Y T 1 2 P - 1 0 0 0 FAST RECOVERY RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPA BILITY ■ VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING
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12P-1000
T0220AC
Q0b0233
00b0234
diode byt 45
12P-1000
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Untitled
Abstract: No abstract text available
Text: 1N6638US, 1N6642US, 1N6643US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/578 1N6638U,1 N6642U, 1N6643U AVAILABLE IN JAN, JANTX, JANTXV AND JANS 1N6638U & US 1N6642U & US 1N6643U & US PER MIL-PRF-19500/578 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE
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1N6638US,
1N6642US,
1N6643US
MIL-PRF-19500/578
1N6638U
N6642U,
1N6643U
MIL-PRF-19500/578
1N6638U
1N6642U
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Untitled
Abstract: No abstract text available
Text: £jJ SGS-THOMSON D g @ElLi^TOiDtSi TM M BAR 19 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode primarly intended for UHF mixers and ultrafast switching applications. ABSOLUTE MAXIMUM RATINGS (limiting values Parameter Symbol V r rm
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7T2T237
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diode average rectified output current
Abstract: w6 sm diode 2C48A HED 4
Text: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 4 n /n | H I UvU, I / L Z U 4 0 A U10(D,F)2C48A O SW ITC H IN G TYPE PO W ER SU PPLY A PPLICATIO N . O C O N V E R T E R & CH O PPER A PPLICA TIO N . • • • • Repetitive Peak Reverse Voltage Average Output Rectified Current
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2C48A
10DL2C48A,
10FL2C48A
U10DL2C48A,
U10FL2C48A
12-10D1A
12-10D2A
10DL2C48A
U10DL2C48A
10DL2C48A\
diode average rectified output current
w6 sm diode
2C48A
HED 4
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BTY230
Abstract: BYT230PI
Text: E i. BYT230PI V -800 BYT231 PI(V)-800 SC S -TH O M S O N M(g^ [lL[i(gTT^(2M S FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 V rms
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BYT230PI
BYT231
BTY231
BTY230PI
7W237
00b0327
BTY230
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Untitled
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: E N 3 8 7 5 SB20-05Z No.3875 I Schottky B arrier Diode SAMYO 50V, 2A Rectifier A p p licatio n s • High frequency rectification switching regulators, converters, choppers . F e a tu re s •Low forward voltage (Vp max = 0.55V).
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SB20-05Z
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