IR 2411 Search Results

Contextual Info: H A R R IS sem iconductor IR F R 4 2 0 , IR F R 42 1 , IR F R 4 2 2 , ¡R F U 4 2 0 , IR F U 4 2 1 , IR F U 4 2 2 2.2k and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.2A and 2.5A, 450V and 500V • High Input Impedance

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

ir 2411

Abstract: A006 SMD a006 SMD 3060
Contextual Info: 2411 Series □ m in Pin Header 1.00mmX1.00mm 0.039l>X0.039l> SMD Type Material: Housing:High temperature housing withstands IR and VPR soldering methods. Contacts: Brass. Electrical Characteristics: Current Rating: 1 AMP. Insulator Resistance: 5000MQ min. at D C 500V.

IR2411

Abstract: ir 2411 transistor K 2411 equivalent
Contextual Info: IR2411 7 -U n it 400m A Darlington Transistor Array IR2411 • 7-Unit 400mA Darlington Transistor Array Pin Connections Description The IR 2411 is a 7-circuit driver. The internal clamping diodes enable the IC to drive the inductive load directly. ■ Features

IR 2411

Abstract: A008
Contextual Info: 2411 Series □upiin Pin Header 1.00mmX1.00mm 0.039llX0.039ll SMD Type M aterial: Housing: H igh Temperature Plastic U L94V-0. withstands IR and V P R soldering methods. Contacts: Brass. E le c tric a l C haracteristics: Current Rating: 1 A. Dielectric Withstanding Voltage: A C 500V.

a013 SMD

Abstract: 1r1j
Contextual Info: 2411 S e r i e s □upun Pin Header 1.00mmX1.00mm 0.039”X0.039” M aterial: Housing: High te m p e ra tu re housing w ithstands IR and VPR soldering m ethods. Contacts: Brass. Plating: Gold plated over nickel. Tin plated over nickel. E le ctrical C h a ra c te r is tic s:

1 J 250

Contextual Info: 2441 Series □upiin P.C.B. Socket 1.00mmX1.00mm 0.039"X0.039" M aterial: Housing:High Temperature Plastic UL94V-0. withstands IR and VPR soldering methods. Contacts: Phosphor Bronze. E le c tric a l C haracteristics: Current Rating: 1 A. Dielectric Withstanding Voltage: AC 500V.

Contextual Info: 2441 Series □upiin P.C.B. Socket 1.00mmX1.00mm 0.039,lX0.0391 > M aterial: Housing:High temperature housing withstands IR and VPR soldering methods. Contacts: Phosphor Bronze. E le c tric a l C haracteristics: Current Rating: 1 A M P. Insulator Resistance: 5000MQ min. at D C 500V.

led 7 segment anode TIL 702

Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9

33c93

Abstract: WD33C93 wdc 33C93 Y523 44-PIN WD33C93B western digital 33C93A hard disk drive diagram AT-N02
Contextual Info: WESTERN DIGITAL CORP SHE — ¡¡•¡ j D ■ 0015340 &1E MldDC 'T S l- 'b y - 'ir ? WD33C93B ■ ■ Enhanced SCSI Bus Interface Controller 1-> * r r-. - . V _ 7, > ' f 1 J * . * ’ . - ■ * . ■ 1" 4 '* I - *■ .ï . : * £ 3 . V liillillliTfronnaaiiia^

Contextual Info: □upiin 2441 S e r i e s P.C.B. Socket 1.00mmX1.00mm 0.039”X0.039” M aterial: Housing: High temperature housing withstands IR and VPR soldering methods. Contacts: Phosphor Bronze. P lating: Gold plated over nickel. E le c tric a l C h a r a c te r is tic s:

corona treatment circuit

Abstract: philips mlcc NE 7555 IC 7555 datasheet msc96 Yageo Ceramic multilayer NPO phycomp capacitors X7R 2220 yageo Phycomp NPO capacitor NE 7555 IC MSB660
Contextual Info: DC, AC and Pulse Load of Multilayer Ceramic Capacitors I % MSB660 Ir 100 90 36.8 10 t td t r1 U (%) MSB665 100 Us UB t t1 t4 t5 MSB667 1.0 0.9 U 0.5 t2 0.3 0.1 t3 www.yageo.com t1 30% max t DC, AC and Pulse Load of Multilayer Ceramic Capacitors Introduction

XI 3003

Contextual Info: DR/4W 1 NG M A D E 4 IN T H IR D ANGLE P R O JE C T IO N T H I S DRAWING IS UNPUBLISHED. COPYRIGHT 19 <Z> RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL LOC DIST CM RIGHTS RESERVED. 54 REVISIONS ZONE LTR REACT -2 THRU E -28 g REV APPD 5 21-96

d2627

Abstract: sn75580 beckman panaplex display beckman display decoder BCD-7 segments panaplex BCD 7 seg BCD-7 segments decoder capacitor 10D SN7558
Contextual Info: TYPE SN75584A HIGH-VOLTAGE 7-S EG M EN T LA TCH /D ECOD ER/CATH OD E D R IV E R D ISPLAY C IR CU ITS D 2627, MAY Output Current Adjustable From 0.1 m A to 4 mA DPI J T DM OS Outputs for High Breakdown Voltage Segment Outputs . . . 100 V Min Decimal Point O u tp u t. . . 100 V Min

SLP-136B-81

Abstract: SLP136B81 SLP-136B SLP136B SLP-838A-37 LM 8368 MV5026 MV5053 MV5054-1 MV5054-3
Contextual Info: 0 L E D fe % 7 li £ tu fi a « ,7\,= 25'D «Ä «SÄ 2 0!^ * '.deg. Xr nml ft *: íg 7 , = ?5'C KStE;fL Iv Ir .medi im A' Vr IV; /y '.mA; n-f: !V • HÜ 24 635 150 20 2.2 20 30 ?Lfé 90 660 1.6 20 1.7 20 100 MV5022 «>à 90 660 1.6 20 1.7 20 MV5023 « fé

IFU422

Abstract: FU420 IFU420 IRFR421 420 Diode FR420 IFR421 IRFU N-Channel Power MOSFETs
Contextual Info: m HARRIS IRFR420/421/422 IRFU420/421/422 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Features Packages IR F U 4 2 0 /4 2 1 /4 2 2 T O -2 5 1 A A TOP VIEW • 2.2 A and 2 .5 A, 4 5 0 V and 5 0 0 V • rD S on = a i d 4 .0 n I SOURCE • Single Pulse A valanche Energy Rated

M39022/13-B106GP

Abstract: M39022/10-L334JP
Contextual Info: € 1 SPRAGUE MIL STYLE FILM CAPACITORS MIL-C-39022/01 HERMETICALLY-SEALED CAPACITORS TO MILITARY SPECIFICATION MIL-C- 39022/01 MIL STYLE CHR09 PART NUM BERING SYSTEM M39022/01 - 1001 DASH NUMBER. S E E S T A N D A R D R A T IN G T A B LE S . N U M B E R S H A L L C O R R E S P O N D T O D E S IR E D V O L T A G E R A T IN G , C A P A C IT A N C E V A LU E ,

2SD1292

Abstract: 2SA1038 834x
Contextual Info: h 7 > V X £ /T r a n s is to r s panM « S E ¿ í f H t í l C O l ' T • M3ÉIÍHSS • papHffiE>S» 2 7 H !£ 7Tsb i t if, ^ t ir o ^ 3 * « 5 x V N '< X í , r v w X liÿ g f iD ic s iï f â f ê M * £ t > o r í s e . f , -fro n M » ttt tlS D f fla i* » t/« iit ti* r o * 4 ic « t- 3 T a is n i

Contextual Info: SONY C XD 2411AR Timing Generator for Color LCD Panels Description The CXD2411AR is a timing signat generator for color LCD panel drivers. Features • Generates the LCX005BK/BKB and LCX009AK/AKB drive pulse. • Supports right/left inverse display. • Supports 16:9 wide display.

hp 2400

Abstract: HCPL-2411
Contextual Info: HEWLETT-PACKARD/ CMPNTS T> blE • 44H75Ô4 DDO^DMS 15b « H P A W mL'hal HM HP AE CWKLAERTDT 20 M Baud High CMR Logic Gate Optocoupler HCPL-2400 HCPL-2411 • High Speed: 4 0 MBd Typical D ata R ate • High Common Mode Rejection H C P L -2400:10 kV/us @

PMB 2800

Abstract: PMB2411 PMB2905 PMB2346 ir 2411 GSM/GSM module circuit diagram PMB2800 PMB 2346 Via vt 1708 siemens PMB 2800
Contextual Info: SIEMENS ICs for Communications PMB 2411 V1.1 Dual-Band Receiver Data Sheet 10.98 Dual-Band Receiver PMB 2411 V1.1 Contents Revision History 3 1 General Overview 1.1 Features 1.2 Applications 1.3 Functional Description 4 4 4 4 2 Pinning 2.1 Pin Description

Optocoupler HCPL 501

Abstract: Optocoupler 501 UI02 optocouplers 501 E55361 HCPL-2400 HCPL-2411 IEC wiring schematic symbols 831m5 hp 2411
Contextual Info: What H EW LET T PACKARD 20 M Baud H igh CMR Logic Gate O ptocoupler HCPL-2400 HCPL-2411 F eatures • High Speed: 40 MBd Typical Data Rate • High Common Mode Rejection HCPL-2400:1 kV/ps @ VCM- 50 V HCPL-2411:1 kV/^s @ Vcm-SOOV • AC Performance Guaran­

C4097

Abstract: A1036K
Contextual Info: 2SC2411K/2SC4097 h ~7 > v 7> $ / T ransistors 2SC2411K 2SC 4097 y i j - Epitaxial Planar NPN Silicon Transistors •t’Œ ^iâ'ISftl/Medium Power Amp. • 1 ICMax. 0/D im en sio ns Unit : mm) \lii 2S C 4097 2S C 2411K 2.9+ 0.2 lc M ax.= 500m A 2.0 + 0.2

K 2411 equivalent

Abstract: N2411
Contextual Info: TOSHIBA TRANSISTOR SEMICONDUCTOR R N 2410, RN 2411 TnCUIDA • w w ■ II TECHNICAL DATA SILICON PNP EPITAXIAL TYPE PCT PROCESS (RN2410) SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • With Built-in Bias Resistors s Simplify Circuit Design