IR 536 Search Results

IR2E01

Abstract: LR4087 LZ8420M LZ9GG13 LI3160 IR2C36 LZ2423A SM8205 LZ9GG13M LR39901
Contextual Info: Index Model No. A R M 7 D C PU C o re B i-C M O S 1 28 4 0 ,4 2 C 62 IR 3 Y 1 2 A 50 LH1532 49 LH 531V 00 2.4 IR 2 E 2 8 62 IR 3 Y 1 4 50 LH1536 49 LH 532000B 3,4 IR 2 E 2 9 62 IR 3 Y 1 5 50 LH 1540A 49 L H 5 3 2 00 0 B -1 3,4 IR 2 E 3 0 62 IR 3 Y 1 6 50

TE85L PACKING TE85

Abstract: Reel Taping Specification JEDEC toshiba tape and reel 2SK851 toshiba packing naming 2SK405 equivalent 2SK1529 LT 5212 2sk1529/2sj200 equivalent 2SJ200 equivalent
Contextual Info: TO SHIBA Quick Reference I. Quick Reference Table for Taping 1. TO-92 Device PACKING TAPING TYPE NO. REEL TPE1 DIMENSIONAL OUTLINE d ir e c t io n of tape feed QTY. 2.000PCS/ REEL 1 2 .7 AMMO PACK 2. TPER1 D IR E C T IO N OF TAPE FEED TPE2 D IR E C T IO N OF

tfm 5380

Abstract: TFM 5360 TFM 5300 ir TFM 5330 tfm 5560 TFM 5300 TFM 1380 T Temic TFM 5360 u2506b TFM 5400
Contextual Info: TFMx IR Detector Photomodules TELEFUNKEN Semiconductors 06.96 Table of Contents General Information. 1 Introduction . 1

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

Contextual Info: <s> CO i\i 53-53 "sT in CO m LD 45=52 V <*3 47.42±0.1 3.7 MIN 43.815) o Q (0=635) PI TCH « d BSÏ ÿ^ JJU Ç _ m u ffi m m S 7 Ei . m r-ir.1 'fih : ~ r u p ~ :zd 1 " b L|- [ . (0.27) [ [join: n : ^ j | f D “ : z iD p i^ z ir - r 3 ^ \ ~ v .

Contextual Info: 3QE » • 7 ^ 2 C 2 3 7 0D30734 H ■ ^ p 3 > °M £ fZ J SCS-THOMSON Ä 7# [M ^ m ie T T IM O tg S IR FK 4 H250 'T js S-THÖMSÖN N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR MODULE TYPE IR FK4H 250 V dss Ros on) Id 200 V 0 .02 1 Q 108 A . ■ . ■

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 536 MHz Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 240 Ω ±25% Z 460 Ω typ. IR RDC 200

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 536 Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 240 Ω ±25% Z 460 Ω typ. IR RDC 200 mA

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 536 Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 240 Ω ±25% Z 460 Ω typ. IR RDC 200 A max.

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 536 MHz Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 240 Ω ±25% Z 460 Ω typ. IR RDC 200

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 536 MHz Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 240 Ω ±25% Z 460 Ω typ. IR RDC 200

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 536 MHz Rated current ΔT = 20K DC Resistance Type Value Unit Tol. Z 240 Ω ±25% Z 460 Ω typ. IR RDC 200

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Contextual Info: IR Emitter and Detector Product Data Sheet LTR-536ABM Spec No.: DS50-2005-012 Effective Date: 05/18/2010 Revision: B LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.

LG color tv Circuit Diagram schematics

Abstract: texas ttl YJ 162A Texas Instruments TTL integrated circuits catalog SN74180 AC digital voltmeter using 7107 Sii 9024 MC3123 sn74ls860 SN7490AJ sn74243
Contextual Info: IN D EXES Alphanumeric • Functional/Selection Guide IN T E R C H A N G E A B ILIT Y GUIDE G E N E R A L INFORM ATION O RD ERIN G IN STRUCTIO N S AND M ECH A N ICA L D A TA 5 4 /7 4 FA M ILIE S OF CO M PATIBLE T T L C IR C U ITS 54/74 F A M IL Y SSI C IR C U ITS

Contextual Info: IR Emitter and Detector Product Data Sheet LTR-536AD Spec No.: DS-50-92-0089 Effective Date: 05/18/2010 Revision: C LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.

HALF WAVE RECTIFIER CIRCUITS high speed

Abstract: DL60P DL-35
Contextual Info: DC COMPONENTS CO., LTD. DL60P RECTIFIER SPECIALISTS R TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY DIODES FEATURES * Metal silicon junction, majority carrier conduction. * High current capability, low forward voltage drop. * * * * * Extremely low reverse current IR

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

6071A

Abstract: IN6072 c 6067 A5150 IN6072A 1N6066A IN6065
Contextual Info: TRANSIL T R A N S IE N T V O L T A G E S U P P R E S S O R S " T R A N S IL " Types V B R ‘ (V) 'UM V RM ® 'R V ( C L } @ 'pp V (C L] ® Ipp m ax m ax 1 m s expo U n id ir e c ­ tio n a l 1 ,5 K W B id ir e c ­ tio n a l / 1 ms expo. 1N 1N IN IN

13 pin isolation transformer

Abstract: PEB2086 PI203828
Contextual Info: YCL PI203828 ISDN S-Interface Transformers Feature ♦Dual SMT package contains both transmit and receive transformers ♦Designed for PEB2086 Chip . ♦ Isolation Voltage : 1500Vrms Specifications Parameter Turn Ratio Inductance ♦Designed to meet IR 2350C Peak Requirement.

ZB32-XEZ

Abstract: DILM32 ZB32-2.4 ZB32-2 VDE 0106 500VIE
Contextual Info: Type: ZB32−2,4 Article No.: 278448 Ordering information Overload release, min. – max. Ir A 1,6 – 2,4 Auxiliary contacts M = Make 1M Auxiliary contacts B = Break 1B For use with DILM17, DILM25, DILM32, DIULM17, DIULM25, DIULM32, SDAINLM30, SDAINLM45,

ZB32-6

Abstract: ZB32-XEZ DILM32 27-8450
Contextual Info: Type: ZB32−6 Article No.: 278450 Ordering information Overload release, min. – max. Ir A 4–6 Auxiliary contacts M = Make 1M Auxiliary contacts B = Break 1B For use with DILM17, DILM25, DILM32, DIULM17, DIULM25, DIULM32, SDAINLM30, SDAINLM45, SDAINLM55

660 880 940 led

Abstract: KED541H
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi-wavelength LED KED541H Features •Red and IR emitters in a single package •Sharp directivity with a glass lens •Highly reliable hermetic seal •Direct modulation Dimensions (unit: mm)

OSRAM OPTO SEMICONDUCTORS GmbH

Contextual Info: VLMTG31. Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • SMD LED with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • EIA and ICE standard package • Compatible with IR Reflow, vapor phase and wave