IR 900V 60A Search Results

RUR30100

Abstract: RURP30100 rurp3090 RURP3070 RURP3080
Contextual Info: RURP3070, RURP3080, RURP3090, RURP30100 200 200 100 100 IR , REVERSE CURRENT µA IF , FORWARD CURRENT (A) Typical Performance Curves TJ = +175oC TJ = +100oC 10 TJ = +25oC 1 TJ = +175oC 10 TJ = +100oC 1.0 0.1 TJ = +25oC 0.01 0.0 0.5 1.0 1.5 2.0 2.5 400 600

RURP3080

Abstract: transistor 1000V RURP30100
Contextual Info: « H a r r is RURP3070, RURP3080 uu — RURP3090, RURP30100 Decem ber 1993 30A, 700V - 1 000V Ultrafast Diodes Package Features JE D E C TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic tRR< 110ns • +175°C Rated Junction Temperature • Reverse Voltage Up to 1000V

Contextual Info: « RURP3070, RURP3080, RURP3090, RURP30100 ¡11995 30A, 700V - 1000V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery Characteristic tRR< 110ns JEDEC TQ-220AC ANODE CATHODE • +175°C Rated Junction Temperature CATHODE (FLANGE) • Reverse Voltage Up to 1000V

RUR30100

Abstract: rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V
Contextual Info: RUR3070/30Q0, B U R 3090/30100 HARRIS HARRIS SEMICOND SECTOR 5bE D • 43D2271 00423^5 511 I HAS May 1992 Features 30A Ultrafast Diode With Soft Recovery Characteristic Package 3 - / 7 T0-220AC • Ultrafast with Soft Recovery Characteristic {tfr < 110ns

30100 transistor

Abstract: RURP3080
Contextual Info: < X | % ms h a r r RURP3070, RURP3080, RURP3090, RURP30100 i s „ . . c o n - u c t o . 30A, 700V - 1000V Ultrafast Diodes April 1 9 9 5 Features Package • Ultrafast with Soft Recovery Characteristic *rr < 110ns JE D E C TO-22QAC ANODE CATHODE • +175°C Rated Junction Temperature

IRG4PF50W

Contextual Info: PD - 91710 International l R Rectifier IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features • O ptim ized fo r use in W elding and S w itch -M ode P ow er S up ply applications • Industry benchm ark switching losses im prove efficiency o f all pow er supply topologies

irg4pf50w

Contextual Info: PD - 91710 International l R Rectifier IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features • O p tim ize d for use in W eldin g and S w itc h -M o d e V ces = 900V P o w e r S u pp ly applications • Industry ben chm ark switching losses improve efficiency of all pow er supply topologies

Contextual Info: PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter

IRG4PF50W equivalent

Abstract: IRG4PF50W
Contextual Info: PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter

IRG4PF50W

Abstract: IRG4PF50W DATASHEET
Contextual Info: PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter

pearson 411

Abstract: APT60D80B APT60D100B APT60D90B QGG1047 diode Mof pearson ct 411
Contextual Info: A D V A N C E D PO WE R T E C H N O L O G Y 1 - Cathode 2 -Anode Back of Case - Cathode b3E D D H S 7 T D cì Ü O G l O m t 3TT H A V P A d v a n ced P o w er Te c h n o l o g y APT60D100B APT60D90B APT60D80B 1 1000V 900V 800V 60A 60A 60A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE

IR 1838 T

Abstract: IRG4PF50WD
Contextual Info: PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies

IRG4PF50WD

Contextual Info: PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies

1MB60-090

Abstract: diagram induction heater B-26 ERD60-100 B25 diode diode b26
Contextual Info: E R D 6 - 1 0 0 1 5 A « a g a s s i— K FAST RECOVERY DIODE • ¡N ffi : Features • ftSSiJE High Voltage • ,fl£)|liW/±P$T!l$‘l£ Low forward Voltage drop. Small Package M W M & W i: Connection Diagram : Applications • •torn* m Voltage Resonance Power Supply

Ir 900v 60a

Abstract: APT0406 APT0501 APT0502
Contextual Info: APTC90H12SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: APTC90AM60SCTG . Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

Contextual Info: APTC90H12SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

AG QC TRANSISTOR

Abstract: Ir 900v 60a APT0406 APT0501 APT0502
Contextual Info: APTC90AM60SCTG . Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

vs 1838 b

Abstract: 98-I
Contextual Info: PD- 91788 International IQ R Rectifier IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: APTC90H12SCTG Full - Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 900V RDSon = 120m max @ Tj = 25°C ID = 30A @ Tc = 25°C Application • Motor control  Switched Mode Power Supplies  Uninterruptible Power Supplies

Contextual Info: APTC90AM60SCTG . Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VDSS = 900V RDSon = 60m max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Motor control  Switched Mode Power Supplies  Uninterruptible Power Supplies

Contextual Info: APTC90H12SCTG VDSS = 900V RDSon = 120mΩ max @ Tj = 25°C ID = 30A @ Tc = 25°C Full – Bridge Series & SiC parallel diodes Super Junction MOSFET Power Module Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies

IHW30N90R

Abstract: H30R90
Contextual Info: Soft Switching Series IHW30N90R q Reverse Conducting IGBT with monolithic body diode Features: • 1.5V typical saturation voltage of IGBT • Trench and Fieldstop technology for 900 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior