IR CUT FILTER Search Results

Infrared 450 nm

Contextual Info: Optical Devices Epson Toyocom Product number please contact us X3Fxxxxxxxxxx00 OPTICAL DEVICE OLPF IR-cut Filter •Sharply cut infrared ray UV•IR-cut •Sharply cut infrared ray Anti-Dust coat •Reduce dust adhesion, improve dust removal IR-cut Filter

ir cut filter

Abstract: 420625
Contextual Info: IR CUT FILTER - ALD PRODUCT BRIEF KEY FEATURES AND BENEFITS API Nanotronics Introduces Low Edge Shift IR Cut Filters from its NanoOpto Division based on Atomic Layer Deposition. Ideal for high performance digital imaging applications, they are fabricated with a conformal atomic

Contextual Info: Low Pass Filter for Cable Modem Applications ELECTRONICS INC. EPB5208G • Integrated LPF designed to work with Texas Instruments 4522 • Robust construction allows for IR/VP processes Electrical Parameters @ 25°C Cut-Off Frequency MHz Typ. 68 Insertion

XFMR

Contextual Info: Low Pass Filter for Cable Modem Applications ELECTRONICS INC. EPB5205G • Integrated LPF designed to work with Texas Instruments 4522 • • Robust construction allows for IR/VP processes • Electrical Parameters @ 25° C Cut-Off Frequency MHz Typ. 68

BCM3210

Abstract: BCM3033 BCM3137 EPB5188 LPF marking
Contextual Info: Low Pass Filter for Cable Modem Applications ELECTRONICS INC. EPB5188 • Integrated LPF designed to work with Broadcom • BCM3033, BCM3137 and BCM3210 • Robust construction allows for IR/VP processes • Electrical Parameters @ 25° C Cut-off Frequency

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance 100 MHz Z 90 Ω ±25% Rated current ∆T = 40 K IR RDC 280 mA max. 0.30 Ω max. DC Resistance Cut-off frequency |Sdd21| = 3 dB

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance 100 MHz Z 67 Ω ±25% Rated current ∆T = 40 K IR RDC 320 mA max. 0.24 Ω max. DC Resistance Cut-off frequency |Sdd21| = 3 dB

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance 100 MHz Z 67 Ω ±25% Rated current ∆T = 40 K IR RDC 320 mA max. 0.24 Ω max. DC Resistance Cut-off frequency |Sdd21| = 3 dB

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance 100 MHz Z 67 Ω ±25% Rated current ∆T = 40 K IR RDC 320 mA max. 0.24 Ω max. DC Resistance Cut-off frequency |Sdd21| = 3 dB

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance 100 MHz Z 67 Ω ±25% Rated current ∆T = 40 K IR RDC 320 mA max. 0.24 Ω max. DC Resistance Cut-off frequency |Sdd21| = 3 dB

Contextual Info: EPE6310G • Robust construction allows for IR/VP processes • • Available in SMD, DIP and DIL Packages • Electrical Parameters @ 25° C Cut-off Frequency MHz Insertion Loss (dB Max.) Return Loss (dB Min.) Attenuation (dB Min.) ± 3.0 MHz 5-42 MHz 5-42

Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impendance 100 MHz Z 67 Ω ±25% Rated Current ∆T = 40 K IR RDC 320 mA max. 0.24 Ω max. DC Resistance Cut-Off Frequency |Sdd21| = 3 dB Insulation Test Voltage

Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impendance 100 MHz Z 120 Ω ±25% Rated Current ∆T = 40 K IR RDC 280 mA max. 0.30 Ω max. DC Resistance Cut-Off Frequency |Sdd21| = 3 dB Insulation Test Voltage

Contextual Info: J f e f /H X Optical Device • ^ ^ □ - ' ^ ^ T J I ' ^ Z ' ^ ' i l l ' P l ' T . / O R D E R I N G FORMAT OF OPTICAL LOW PASS FILTER & Z ' f f i g T Z L'o -r )^ 9 (D Please specify the following items when ordering Optical Low Pass Filter. 1. s m Application

Contextual Info: Optical Device Optical Low Pass Filter • ^ ^ /S p e c ific a t io n 31 § Item IS Specification 5 ~30mm<£ ; 5 ~30mm □ (Outline dimensions) siH ifT-g-ttcJ; ‘J ^ S ; On discussion •ft-Htl/fin] (Separation direction) (Optic axis tolerance) ±60' MAX.

Contextual Info: f O r M T * Optical Device kss 7 < ^ ( D Z '^ lC O l'T / O R D E R I N G FORMAT OF OPTICAL LOW PASS FILTER 7 < >£<7)H@ £ I'o Please specify the following items when ordering Optical Low Pass Filter. 1. iflt) Application i i f l t> * 7 DSC DSC Video camera

BPV20NFL

Contextual Info: TELEFUNKEN Semiconductors BPV 20 NFL Silicon PIN Photodiode Description BPV20NFL is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens and extra long leads. The epoxy package itself is an IR filter, spectrally

BPV23NFL

Contextual Info: TELEFUNKEN Semiconductors BPV 23 NFL Silicon PIN Photodiode Description BPV23NFL is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens and extra long leads. The epoxy package itself is an IR filter, spectrally

BPV22F

Abstract: diode a1 7
Contextual Info: TELEFUNKEN Semiconductors BPV 22 F Silicon PIN Photodiode Description BPV22F is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters

BPV21F

Contextual Info: TELEFUNKEN Semiconductors BPV 21 F Silicon PIN Photodiode Description 94 8387 BPV21F is a high speed and high sensitive PIN photodiode in a plasic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters

950NM

Abstract: BPV20F
Contextual Info: TELEFUNKEN Semiconductors BPV 20 F Silicon PIN Photodiode Description 94 8387 BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters

BPV23F

Contextual Info: TELEFUNKEN Semiconductors BPV 23 F Silicon PIN Photodiode Description BPV23F is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters

hcp 932

Abstract: capacitor jianghai cd 293
Contextual Info: CD 281 LL Series 3 000 - 12 000h at 105°C CD 269 PH • Longest Lifetime 105°C · Low Impedance · Power Supplies · Smoothing, Buffering, Filtering 125°C CD 110 PT 85°C CD 287 GC smaller lower ESR CD 28L QL lowest ESR longest life CD 281 LL CD 284 XY Item

NUF4001MU

Abstract: NUF4001MUT2G
Contextual Info: NUF4001MU Low Capacitance 4 Line EMI Filter with ESD Protection in UDFN8 Package This device is a 4 line EMI filter array for wireless applications. Greater than −25 dB attenuation is obtained at frequencies from 800 MHz to 5.0 GHz. The NUF4001MU has a cut−off frequency of