IR HEXFET PROBE SPECIFICATIONS Search Results

IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.

HEXFET III - A new Generation of Power MOSFETs

Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
Contextual Info: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power

IRFC11N50

Abstract: IRFB11N50A equivalent
Contextual Info: PD - 94737 IRFC11N50AB HEXFET Power MOSFET Die in Wafer Form D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ Ultra Low On-Resistance l l l G S Key Electrical Characteristics Packaged Part c Parameter Description 500V RDS(on) = 0.52Ω

IRFP264n equivalent

Abstract: IRFC264
Contextual Info: PD - 95820 IRFC264NB HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Tape and Reel upon request , Chip Pack, and Sawn on Film ‚ G 250V RDS(on) = 60mΩ (max.) 6" Wafer S Electrical Characteristics Parameter V(BR)DSS RDS(on)

Contextual Info: PD - 94786 IRFCG20B HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn Wafer Sawn on Film ‚ G 1000V RDS on = 11Ω (max.) 5" Wafer S Key Electrical Characteristics (TO-220 Packaged Part)c Parameter Description

IRFB18N50K equivalent

Contextual Info: PD - 94731 IRFC18N50KB D HEXFET Power MOSFET Die in Wafer Form l l 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ G Key Electrical Characteristics TO-220 package Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description

IRFC9130

Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Contextual Info: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power

Contextual Info: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION

20ETS

Abstract: IR180DM16CCB
Contextual Info: Bulletin I0116J 09/00 IR180DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETS Series Major Ratings and Characteristics Parameters

40EPS

Abstract: IR230DM16CCB
Contextual Info: Bulletin I0117J rev. A 08/01 IR230DM16CCB STANDARD RECOVERY DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPS Series Major Ratings and Characteristics Parameters

WAFER International Rectifier

Abstract: IR hexfet probe specifications 93825
Contextual Info: Preliminary Data Sheet I0146J 02/02 IR155DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 155 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 15ETS Series Major Ratings and Characteristics

IR135DM16CCB

Contextual Info: Bulletin I0115J 09/00 IR135DM16CCB STANDARD RECOVERY DIODES Junction Size: Rectangular 135 x 100 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 8EWS.S Series Major Ratings and Characteristics Parameters

how to test POWER MOSFET with digital multimeter

Abstract: isl6236 sd1009 AN1272 irf7832 08053D105KAT2A 6TPD330M ISL6236EVAL2 HEXFEt Power MOSFET Design Guide H1046-00104-50V10
Contextual Info: ISL6236 Evaluation Kit – Chipset Application Application Note This application note describes the ISL6236 evaluation board intended for applications in notebook computers and other battery-powered devices. Description As notebook computer and battery-powered equipment

isl6236 schematic

Abstract: how to test POWER MOSFET with digital multimeter AN1271 ISL6236 10w r33 irf7821 irf7832 ldo 5 pinout LDO Positive 08053D105KAT2A
Contextual Info: ISL6236 Evaluation Kit – System Regulation Application Application Note This application note describes the ISL6236 evaluation board intended for applications in notebook computers and other battery-powered devices. Description As notebook computer and battery-powered equipment

6TPF330M9L

Abstract: AN1456 40 TQFN 5x5 CAP7343 ISL62386 ISL62386HIEVAL1Z ISL62386LOEVAL1Z TP20 resistor 10k 10w
Contextual Info: ISL62386LOEVAL1Z and ISL62386HIEVAL1Z Quad-Output Evaluation Board User Guide Application Note August 25, 2009 Introduction TABLE 2. ENABLE TRUTH TABLE Continued The ISL62386 evaluation boards demonstrates the performance of the ISL62386 quad-output voltage controller.

CAP7343

Abstract: 6TPF330M9L 2N7002-SOT23 d 1398 ISL62383 ISL62383HIEVAL1Z 78B03S SMCAP C5C27 SUD50N03-07
Contextual Info: ISL62383 Triple-Output Evaluation Board User Guide Application Note July 31, 2008 Introduction TABLE 2. ENABLE TRUTH TABLE The ISL62383 evaluation board demonstrates the performance of ISL62383 triple-output controller. The ISL62383 controller includes two pulse-width modulation

CAP7343

Abstract: 6TPF330M9L SUD50N03-07 irf7832 how to test POWER MOSFET with digital multimeter ISL62391 ISL62391HIEVAL1Z ISL62391LOEVAL1Z ISL62392 ISL62392HIEVAL1Z
Contextual Info: ISL62391, ISL62392 Triple-Output Evaluation Board User Guide Application Note Introduction . The ISL62391 and ISL62392 evaluation boards demonstrate the performance of ISL62391 and ISL62392 triple-output controllers. The ISL62391 and ISL62392 controllers include

resistor 1k

Abstract: 1K resistor 1W datasheet panasonic ceramic capacitor 16TPB47M AN1130 SM0603 1K resistor datasheet P13 SOT Resistor 120K S9001
Contextual Info: Using the ISL6402, ISL6402A Evaluation Board Application Note Using the Evaluation Board The ISL6402 and ISL6402A are high performance tripleoutput controllers offering control and protection features for 2 synchronous buck PWMs and 1 linear regulator.

ultrasonic generator 20khz

Abstract: Ultrasonic generator schematic circuit AN1539 131-4353-00 Ultrasonic power generator schematic IR R8 MOSFET IRF7811AV irf7832 01UF 10UF
Contextual Info: Application Note 1539 ISL8112EVAL1Z Evaluation Board Setup Procedure The ISL8112 is a dual-output Synchronous Buck controller with 2A integrated driver. It features high light load efficiency which is especially preferred in systems concerned with high efficiency in wide load

6TPF330M9L

Abstract: 2N7002-SOT23 MTP500X CAP7343 2N7002 SOT23 2N7002_SOT23 40 TQFN 5x5 BAT54S application note irf7832 sanyo c35
Contextual Info: ISL62381, ISL62382 Quad-Output Evaluation Board User Guide Application Note Introduction . The ISL62381 and ISL62382 evaluation boards demonstrate the performance of ISL62381 and ISL62382 Quad-output controllers. The ISL62381 and ISL62382 controller include

DNP013

Abstract: isl62371 ISL6237IRZA isl6237 6TPD330M mosfet p28 how to test POWER MOSFET with digital multimeter p28 smd smd transistor P23 h2512
Contextual Info: ISL6237EVAL1 Evaluation Kit Application Note This application note describes the ISL6237 evaluation board intended for applications in notebook computers and other battery-powered devices. Description As notebook computer and battery-powered equipment complexity increases, higher levels of power management

10BQ040

Abstract: EIA-541 IRF7811AV C1402
Contextual Info: PD - 96079A IRF7811AVUPbF IRF7811AVUPbF • • • • • N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications • 100% RG Tested • Lead-Free

irfp4332

Abstract: irfp4332 mosfet IRFB4332
Contextual Info: PD - 97139 IRFC4332B PDP MOSFET HEXFET Power MOSFET Die in Wafer Form l l D 100% Tested at Probe  Available in Chip Pack, Unsawn wafer, Sawn on Film ‚ 250V RDS on = 0.033Ω (max.) 6" Wafer G S Key Electrical Characteristics (TO-220 package)d Parameter

FD059H06A5B

Abstract: 31-2 MIL-HDBK-263 S1025
Contextual Info: I - 0512J rev. A FD059H06A5B FRED Die in Wafer Form z z 600V VF = 1.45V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage