ir igbt 1200V 10A
Abstract: APTGS10X120BTP2 APTGS10X120RTP2
Text: APTGS10X120RTP2 APTGS10X120BTP2 Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module VCES = 1200V IC = 10A @ Tc = 80°C Application • AC Motor control Features Non Punch Through NPT Low Loss IGBT - Low voltage drop - Low tail current
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APTGS10X120RTP2
APTGS10X120BTP2
APTGS10X120RTP2:
ir igbt 1200V 10A
APTGS10X120BTP2
APTGS10X120RTP2
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power Diode 200V 10A
Abstract: ir igbt 1200V 10A "Power Diode" diode Vr 1200v ERW10-120 power diode 10a 10a 1200v diode
Text: ERW10-120 10A/1200V Fast Recovery Diode for IGBT Outline Drawings Equivalent circuit Units mm K A Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Repetitive Reverse Voltage Repetitive peak surge current Average rectiffied forward current
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ERW10-120
0A/1200V)
20kHz
ERW10
power Diode 200V 10A
ir igbt 1200V 10A
"Power Diode"
diode Vr 1200v
power diode 10a
10a 1200v diode
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ir igbt 1200V 40A
Abstract: 20MT120UF E78996 bridge
Text: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
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20MT120UF
E78996)
20KHz
12-Mar-07
ir igbt 1200V 40A
20MT120UF
E78996 bridge
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Untitled
Abstract: No abstract text available
Text: Bulletin I27169 Rev.D 10/03 GB15XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features Gen. 5 NPT 1200V IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses
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I27169
GB15XP120K
12-Mar-07
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gp15n120
Abstract: SGP15N120 SGW15N120 PG-TO-220-3-1 PG-TO-247-3 ir igbt 1200V 40A Diode 1S 2473
Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGP15N120
SGW15N120
PG-TO-220-3-1
PG-TO-247-3
GP15N120
gp15n120
SGP15N120
SGW15N120
PG-TO-220-3-1
PG-TO-247-3
ir igbt 1200V 40A
Diode 1S 2473
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GB05XP120K
Abstract: ntc 0833 igbt 50v 3a w306
Text: Bulletin I27168 Rev.E 10/03 GB05XP120K Three Phase Inverter Module in MTP Package 1200V NPT IGBT & Hexfredtm Diodes Features Gen. 5 NPT 1200V IGBT Technology HEXFRED TM Diode with UltraSoft Reverse Recovery Very Low Conduction and Switching Losses
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I27168
GB05XP120K
12-Mar-07
GB05XP120K
ntc 0833
igbt 50v 3a
w306
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Untitled
Abstract: No abstract text available
Text: SGP02N120 SGI02N120 SGD02N120, Fast IGBT in NPT-technology C • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGD02N120,
40lower
SGP02N120
SGI02N120
PG-TO-252-3-1
PG-TO-220-3-1
O-220AB)
O-252AA)
PG-TO-262-3-1
O-262)
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PG-TO-247-3-1
Abstract: No abstract text available
Text: SGW02N120 Fast IGBT in NPT-technology C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGW02N120
SGW02N120
PG-TO-247-3-1
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ic60a
Abstract: No abstract text available
Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGP15N120
SGW15N120
PG-TO-220-3-1
O-220AB)
PG-TO-247-3-1
O-247AC)
SGW15N120
ic60a
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JESD-022
Abstract: SGW25N120 igbt sgw25n120
Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGW25N120
SGW25N120
641-SGW25N120E8161
SGW25N120E8161
JESD-022
igbt sgw25n120
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G07N120
Abstract: SGP07N120 Q67040-S4272
Text: SGP07N120 Fast IGBT in NPT-technology C • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGP07N120
PG-TO-220-3-1
O-220AB)
SGP07N120
G07N120
Q67040-S4272
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gp15n120
Abstract: SGP15N120 SGW15N120 igbt 1200V 20A PG-TO-247-3 PG-TO-220-3-1 1200v 20a IGBT ir igbt 1200V 10A
Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 s • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGP15N120
SGW15N120
PG-TO-220-3-1
PG-TO-247-3
GP15N120
SGW15N1
gp15n120
SGP15N120
SGW15N120
igbt 1200V 20A
PG-TO-247-3
PG-TO-220-3-1
1200v 20a IGBT
ir igbt 1200V 10A
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g25n120
Abstract: PG-TO-247-3-1 PG-TO247-3-1 G25N120 TSC Q67040-S4277 sgw25n120 M/250w smps inverter circuits
Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGW25N120
SGW25N120
g25n120
PG-TO-247-3-1
PG-TO247-3-1
G25N120 TSC
Q67040-S4277
M/250w smps inverter circuits
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SGW25N120
Abstract: PG-TO-247-3 ir igbt 1200V 40A
Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGW25N120
PG-TO-247-3
SGW25N120
PG-TO-247-3
ir igbt 1200V 40A
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G15N120
Abstract: No abstract text available
Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGP15N120
SGW15N120
PG-TO-220-3-1
O-220AB)
PG-TO-247-3-1
O-247AC)
SGW15N120
G15N120
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ir igbt 1200V 40A
Abstract: G15N120
Text: SGB15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGB15N120
SGB15N120
ir igbt 1200V 40A
G15N120
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G07N120
Abstract: 1200v 20a IGBT
Text: SGB07N120 Fast IGBT in NPT-technology C • lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGB07N120
SGB07N120
G07N120
1200v 20a IGBT
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gp15n120
Abstract: No abstract text available
Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGP15N120
SGW15N120
PG-TO-220-3-1
PG-TO-247-3-1
SGW15N120
gp15n120
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G15N120
Abstract: No abstract text available
Text: SGP15N120 SGW15N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGP15N120
SGW15N120
PG-TO-220-3-1
O-220AB)
PG-TO-247-3-1
O-247AC)
SGW15N120
G15N120
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PG-TO252-3-11
Abstract: SGD02N120
Text: SGP02N120 SGI02N120 SGD02N120, Fast IGBT in NPT-technology C • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SGD02N120,
40lower
PG-TO-252-3-1
SGP02N120
SGI02N120
PG-TO-220-3-1
O-252AA)
O-220AB)
PG-TO-262-3-1
O-262)
PG-TO252-3-11
SGD02N120
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igbt sgw25n120
Abstract: 50S INFINEON SGW25N120 ir igbt 1200V 40A IGBT 1200V 60A igbt to247 PG-TO-247-3 igbt 1200V 40A short circuit
Text: SGW25N120 Fast IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 s • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour
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SGW25N120
PG-TO-247-3
SGW25N120
igbt sgw25n120
50S INFINEON
ir igbt 1200V 40A
IGBT 1200V 60A
igbt to247
PG-TO-247-3
igbt 1200V 40A short circuit
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IRGPH40KD2
Abstract: CEE 16a INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
Text: P D - 9.1250 International I IR e c t i f i e r IRGPH40KD2 Provisional Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE F e a tu re s • S h o rt circu it - 1 0 |js @ 125°C , V GE = 10V V c e s = 1200V
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IRGPH40KD2
O-247AC
O-247AD)
IRGPH40KD2
CEE 16a
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
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MIG toshiba
Abstract: diode 310
Text: TOSHIBA TENTATIVE MIG15Q904H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG 15Q904H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Integrates Inverter, Converter and Brake Power Circuits in One Package. O utput Inverter Stage
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MIG15Q904H
15Q904H
30/iS
25/is
/1600V
/1200V
MIG toshiba
diode 310
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Untitled
Abstract: No abstract text available
Text: MIG10Q805H T O SH IB A TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • O utput Inverter Stage : 3y5 10A/ 1200V IGBT
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MIG10Q805H
5A/1600V
961001EAA1
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