KSD303
Abstract: 3A40 SDB30A40 KSD-3034-000 ksd+150+full+safe
Text: SDB30A40 Semiconductor Schottky Barrier Diode Features • Switching type power supply application • Converter & Chopper Application • Low IR IR=10uA Typ Ordering Information Type No. SDB30A40 Marking Package Code 3A40 SOD-106 Outline Dimensions unit :
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SDB30A40
OD-106
KSD-3034-000
KSD303
3A40
SDB30A40
KSD-3034-000
ksd+150+full+safe
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Untitled
Abstract: No abstract text available
Text: SDB30A40 Semiconductor Schottky Barrier Diode Features • Switching type power supply application • Converter & Chopper Application • Low IR IR=10uA Typ Ordering Information Type No. SDB30A40 Marking Package Code 3A40 SOD-106 Outline Dimensions unit : mm
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SDB30A40
OD-106
KSD-3034-001
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Untitled
Abstract: No abstract text available
Text: SDB30A40 Semiconductor Schottky Barrier Diode Features • Switching type power supply application • Converter & Chopper Application • Low IR IR=10 ㎂ Typ Ordering Information Type No. SDB30A40 Marking Package Code 3A40 SOD-106 Outline Dimensions unit : mm
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SDB30A40
OD-106
KSD-3034-001
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Untitled
Abstract: No abstract text available
Text: SDB10A40 Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability • Low IR IR=10uA Typ Ordering Information Type No. SDB10A40 Marking Package Code 1A40 SOD-106 Outline Dimensions unit : mm 1.6
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SDB10A40
OD-106
KSD-3031-001
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Untitled
Abstract: No abstract text available
Text: SDB1040S Semiconductor Schottky Barrier Diode Features • Low power consumption rectifier • High speed switching application • High reliability • Low IR IR=1 ㎂ Typ. @ VR=20V Ordering Information Type No. Marking SDB1040S Package Code 1A4 SOD-123
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SDB1040S
OD-123
KSD-D6B003-000
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KSD303
Abstract: KSD-3031-000 10A40 silicon controlled rectified SDB10A40
Text: SDB10A40 Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability • Low IR IR=10uA Typ Ordering Information Type No. Marking SDB10A40 10A40 Package Code SOD-106 Outline Dimensions unit : mm 1.6
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SDB10A40
10A40
OD-106
KSD-3031-000
KSD303
KSD-3031-000
10A40
silicon controlled rectified
SDB10A40
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Untitled
Abstract: No abstract text available
Text: SDB1040S Semiconductor Schottky Barrier Diode Features • Low power consumption rectifier • High speed switching application • High reliability • Low IR IR=1 ㎂ Typ. @ VR=20V Ordering Information Type No. Marking SDB1040S Package Code 1A4 SOD-123
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SDB1040S
SDB1040S
OD-123
KSD-D6B003-000
20use
KSD-D6B003-000
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silicon controlled rectified
Abstract: SDB1040
Text: SDB1040 Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability • Low IR IR=10uA Typ Ordering Information Type No. Marking SDB1040 Package Code 1A4 SOD-123 Outline Dimensions unit : mm 3.4~3.6
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SDB1040
OD-123
KSD-3032-000
silicon controlled rectified
SDB1040
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RB500V-40
Abstract: No abstract text available
Text: RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification Applications PINNING Features DESCRIPTION PIN • Small surface mounting type • Low IR IR=70nA Typ. • High reliability 1 Cathode 2 Anode 2 1 S9 Top View Marking Code: "S9"
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RB500V-40
OD-323
OD-323
RB500V-40
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RB500V-40
Abstract: IR-70
Text: RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification Applications PINNING Features DESCRIPTION PIN • Small surface mounting type • Low IR IR=70nA Typ. • High reliability 1 Cathode 2 Anode 2 1 S9 Top View Marking Code: "S9"
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RB500V-40
OD-323
OD-323
RB500V-40
IR-70
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Untitled
Abstract: No abstract text available
Text: RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification Applications PINNING Features DESCRIPTION PIN • Small surface mounting type • Low IR IR=70nA Typ. • High reliability 1 Cathode 2 Anode 2 1 S9 Top View Marking Code: "S9"
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RB500V-40
OD-323
OD-323
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marking code IR10 diode
Abstract: IR10 marking code 3A40 sod diode marking IR10 SDB30A40
Text: SDB30A40 Semiconductor Schottky barrier diode Features • Switching type power supply application • Converter & Chopper Application • Low reverse current : IR=10 ㎂ Typ. @ VR=40V Ordering Information Type No. SDB30A40 Marking 3A40 Package Code SOD-106
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SDB30A40
OD-106
KSD-D6A001-000
marking code IR10 diode
IR10 marking code
3A40
sod diode marking IR10
SDB30A40
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MARKING 3V
Abstract: Mount Schottky Barrier Diodes
Text: RB548W Surface Mount Schottky Barrier Diodes SOT-523 Features Ultra small mold type. Low IR. High reliability. Applications Dimensions in inches and millimeters Low current rectification. Ordering Information Type No. Marking Package Code RB548W
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RB548W
OT-523
RB548W
MARKING 3V
Mount Schottky Barrier Diodes
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3031-002
Abstract: 1A40 KSD303 KSD-3031-002
Text: SDB10A40 Semiconductor Schottky Barrier Diode Features • Low reverse current : IR = Typ. 10 ㎂ @ VR=40V • Low forward voltage : VF= max 0.55V (@ IF=1A) • High speed switching application Ordering Information Type No. SDB10A40 Marking Package Code
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SDB10A40
SDB10A40
OD-106
KSD-3031-002
3031-002
1A40
KSD303
KSD-3031-002
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ND151
Abstract: No abstract text available
Text: ND151 Semiconductor Schottky Barrier Diode Features • • • • Extremely small size package: 0.8x0.6x0.4 ㎜ Typ. Low reverse current: IR=1 ㎂ Max. @ VR=30V Low power rectified High reliability Ordering Information Type No. Marking ND151 Package Code
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ND151
OD-923
KSD-D6E004-000
ND151
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S3 Package
Abstract: No abstract text available
Text: SDB110Q Semiconductor Schottky Barrier Diode Features • Low forward voltage : VF= Max. 0.4V @ IF=10mA • Low reverse current : IR= Max. 0.5 ㎂ (@ VR=5V) • High speed switching application Ordering Information Type No. Marking SDB110Q S3 Package Code
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SDB110Q
SDB110Q
OD-523
KSD-E009-003
S3 Package
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Untitled
Abstract: No abstract text available
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description Marking area CNY70, a compact reflective optical sensor incudes IR-Emitter and Phototransistor with daylight suppression filter. Recommended range of operation is from
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CNY70
CNY70,
2002/95/EC
2002/96/EC
08-Apr-05
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2-pin ir receiver
Abstract: AFC marking SDV702F ksd2067 ksd 120 bsc 2401
Text: SDV702F Semiconductor Variable Capacitance Diode Descriptions • AFC application for FM receiver Features • High Q : Q=70 Min. (f=50MHz) • Low reverse current : IR= 100nA(Max.) (VR=4V) Ordering Information Type No. Marking Package Code SDV702F DV2 SOT-23F
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SDV702F
50MHz)
100nA
OT-23F
KSD-2067-000
50MHz
2-pin ir receiver
AFC marking
SDV702F
ksd2067
ksd 120
bsc 2401
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Untitled
Abstract: No abstract text available
Text: SDB310WMU Semiconductor Schottky Barrier Diode Features • Low VF Max. 0.5V @ 30mA • Low IR ( Max. 1 ㎂ @ 30V) • High reliability Ordering Information Type No. Marking SDB310WMU Package Code DB3 SOT-323 Outline Dimensions unit : mm 1.95~2.25 1.15~1.35
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SDB310WMU
OT-323
KSD-3033-002
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Untitled
Abstract: No abstract text available
Text: SDB310WMUF Semiconductor Schottky Barrier Diode Features • Low VF Max. 0.5V @ 30mA • Low IR ( Max. 1 ㎂ @ 30V) • High reliability Ordering Information Type No. SDB310WMUF Marking Package Code DB3 SOT-323F Outline Dimensions unit : mm 1.95~2.25 0.40 Max.
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SDB310WMUF
OT-323F
KSD-3046-001
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Untitled
Abstract: No abstract text available
Text: SDB310WAUF Semiconductor Schottky Barrier Diode Features • Low VF Max. 0.5V @ 30mA • Low IR ( Max. 1 ㎂ @ 30V) • High reliability Ordering Information Type No. Marking Package Code DB2 SOT-323F SDB310WAUF Outline Dimensions unit : mm 1.95~2.25 0.40 Max.
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SDB310WAUF
OT-323F
KSD-3045-001
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Untitled
Abstract: No abstract text available
Text: SDB310WKU Semiconductor Schottky Barrier Diode Features • Low VF Max. 0.5V @ 30mA • Low IR ( Max. 1 ㎂ @ 30V) • High reliability Ordering Information Type No. Marking SDB310WKU Package Code MG SOT-323 Outline Dimensions unit : mm 1.95~2.25 1.15~1.35
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SDB310WKU
OT-323
KSD-3047-000
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs-IR-Lumineszenzdiode in SMT-Gehäuse GaAs Infrared Emitter in SMT Package S ho 2.1 1.7 0.1 typ SFH 420 SFH 425 CL 0.9 0.7 •y0.\8my J Cathode/Colledor marking 0.12 / m|0.6 0.4 Cathode/Colledor Approx. weight 0.03 g Collector/Cathode marking
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I03ff.
169ff.
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Untitled
Abstract: No abstract text available
Text: SIP RESISTOR NETW ORKS mtiFfntn RSL H = .200 V e w RSC H = .256 'Aw RSH H = .355 ’Aw MARKING: Pin 1 Location Wo. of Pins Wo. of Resistors Circuit Type Res. Value Code Tolerance Data Code Yr, Wk X-C IR CU IT-PAR ALLEL Y-C IR C U IT-D IS C R E TE Z-C IR C U IT-D O U B LE TERMINATION
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