IR P 625 Search Results

Contextual Info: Diodes • Silicon Diodes Switching Vr Type No. (V ) If Ir * Ir (AV) max. (nA) (mA) CD max. *typ. (pF) trr max. (ns) Package Vr Type No. (V ) N o. If Ir * Ir (av) max. (nA) (mA) Co max. *typ. trr max. (ns) Package No. (P F ) MA111 « 80 100 100 1.2 3 S Mini (2 pins)

Contextual Info: C IR C U IT N U M B E R S 12 P L . (9.5) III III III III . . 145 (3.6 8) TYP. • i— i J- o o © L ©00© n ©00© r . 145 (3.6 8) TYP. RECEPTACLE HOUSING I 1625 I C IR C U IT C IR C U IT I . D . (3 P L . ) N U M BE R S (12 P L . ) A MOUNTING E A R

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

Contextual Info: P H Y S IC A L 2 SH IELDED P A R A L L E L P A IR S SH IELD ED PAIR 2 4 AWG SO LID SILVER PLATED C O P PER BINDER .0 5 6 NOM DIAM ETER FOAM POLYOLEFIN, ONE N ATURAL, OTHER RED TINT P A R A L L E L P A IR WITH DRAIN: 2 6 AWG SOLID TINNED C O P PE R A L U M - P O L Y SHIELD

Contextual Info: SIEM ENS GaAIAs-IR-Lummeszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Wesentliche Merkmale Features • G aA IA s-IR -Lum ineszenzdiode, hergestellt im Schm elzepitaxieverfahren • Enge Toleranz: Chipoberfläche/ Bauteiloberkante • G ute spektrale A npassung an

uniwatt

Contextual Info: ORDERING INFORMATION Device MC1398P Temperature Range Package -20°C to +75°C Plastic DIP T V C O L O R P R O C ES SIN G C IR C U IT T V C O L O R P R O C ES SIN G C IR C U IT SILIC O N M O N O LITHIC IN T E G R A T E D C IR C U IT . . . a chroma IF am plifier w ith autom atic chroma control, color kille r,

MPSU10

Abstract: MC1398 MC1398P MPS-U10
Contextual Info: ORDERING INFORMATION Device MC1398P Temperature Range — 20°C to+75°C Package Plastic DIP MC1398 T V CO LO R P R O C E SSIN G C IR C U IT T V C O LO R P R O C E SSIN G C IR C U IT S IL IC O N M O N O L IT H IC IN T E G R A T E D C IR C U IT . . . a c h ro m a IF a m p lifie r w ith a u to m a tic c h ro m a c o n tr o l, c o lo r k ille r,

HO 050

Abstract: ir21 IR21084 IR2108 IR21084S IR2108S MS-012AB
Contextual Info: | p j"0 f n Q t Ì O n Q I Preliminary Data Sheet No. PD60161J IR 2108 /IR 21084 X Q R R e c tifie r HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune

Contextual Info: |p j"0f n Q t ÌO n Q I Preliminary Data Sheet No. PD601631 X Q R R e c tifie r IR 2 1 0 9 /IR 2 1 0 9 4 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage

B34 transistor

Abstract: transistor p2a marking code B34 PMST3906
Contextual Info: • P h ilin ^Sem m ir niconductors n r in r t n r « P hilips ^53^31 □□ 2ST37 7 Tfl « A P X N AMER PHILIPS/DISCRETE P roduct specification b?E D PNP switching transistor FEATURES PMST3906 PIN CONFIGURATION • S-mini package • Short switching time.

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 £ BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC L D IM D y OPTIONAL CENTER "AMP", PART P A R T S UNDER MATERIAL: j P in w j P in w j P in w j P in ir > P in w j P in w j

MC1351

Contextual Info: O RDERING INFORMATION Device M C 135 1 P Temperature Range Package 0°C to +75°C Plastic D IP W ID E B A N D F M - A M P L IF IE R ; L IM IT E R , D E T E C T O R , A N D A U D IO A M P L IF IE R T V S O U N D C IR C U IT M O N O L IT H IC S IL IC O N IN T E G R A T E D C IR C U IT

MC1399P

Abstract: PEC 648 MC1399 PJ+1399+diode
Contextual Info: MC1399 Advance Information T V COLOR PROCESSING C IR C U IT S IL IC O N M O N O L IT H IC I N T E G R A T E D C IR C U IT T V COLOR PROCESSING C IR C U IT T h e M C 1 3 9 9 contains a chrom a IF am p lifie r w ith autom atic chrom a con trol, color killer, linear dc chrom a co n tro l, and a phase

Contextual Info: PRELIMINARY MMST2222A VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR / U T E M ir I p o w e fs e h co n w jcto r / Features Epitaxial Planar Die Construction Complementary PN P Type Available MMST2907A) Ultra-Small Surface Mount Package SOT-323 TOR VIEW

mc1351

Abstract: MC1351P audio preamplifier circuit diagram 30 mHz BW preamplifier transistor audio preamplifier circuit diagram rms audio amplifier circuit diagram
Contextual Info: ORDERING INFORMATION Device MC1351P Temperature Range Package 0°C to +75°C Plastic DIP W ID E -B A N D F M -A M P L IF IE R ; L IM IT E R , D E T E C T O R , A N D A U D IO A M P L IF IE R T V S O U N D C IR C U IT M O N O L IT H IC S ILIC O N IN T E G R A T E D C IR C U IT

y736

Abstract: SCL SDA VSYNC HSYNC PXCK image SY 180/4 170M CCIR656 TMC2490 TMC2490A TMC2491A marking lt 1173 MUX ADR 622
Contextual Info: FAIRCHILD www.fairchildsemi.com s e m i c o n d u c t o r tm TMC2490A/TMC2491 A M u ltis ta n d a r d Digital Video E n c o d e r Features Applications • A ll-digital video encoding • Internal digital subcarrier synthesizer • 8-bit parallel C C IR -601/C C IR -656/A N S I/S M P T E

bcd alu

Abstract: Shift register designed by Max Plus bit slice processors MC10179 MC10902 AL49
Contextual Info: g M O TO R O LA A d v a n c e In form ation MECL-LSI 8-BIT BINARY/BCD ALU SLICE 8-BIT BINARY/BCD ALU SLICE T h e M C 10 9 0 2 is a h ig h s p e e d A L U b u ild in g b lo c k fo r d ig ita l p ro c e s s o rs . T h e c ir c u it o p e ra te s d ir e c tly on BCD d a ta in a d d itio n

U22 2.5A 250V

Abstract: P1028 K1502 FSP400 BFX82 2N3379 C621 MT101B TIX882 c644
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

Contextual Info: OHM’S LAW VARIATIONS OF OHM’S LAW S TT VOLTS AM P ES ER WA E E W 2 R R IR E EI W I W/R WR E R E I W W E2 W T S I IR I2 OH 2 110 115 120 208 220 230 240 277 380 415 440 460 480 550 Rated Voltage 110 115 100% 109% 119% 91% 100% 109% OHMS = VOLTS AMPERES

Q720

Abstract: Q710 10125 ecl to ttl TTL 1980 ecl10k Q700 amcc q710
Contextual Info: O s v ^ C f 004958 DEVICE SPECIFICATION A P P L IE D M IC R O C IR C U IT S C O R P O R A T IO N Q700 SERIES ECL/TTL LOGIC ARRAYS FEATURES VARIOUS ARRAY SIZES 250, 500, 1000 e q u iva le n t gate version s to su p p o rt various c irc u it re q u ire m e n ts.

Q710

Abstract: AMCC Q700 Logic TTL military summary Q720 ECL10K Q700 68-LCC VCC-650 ECL IC NOR
Contextual Info: O s v ^ C f 004958 DEVICE SPECIFICATION A P P L IE D M IC R O C IR C U IT S C O R P O R A T IO N Q700 SERIES ECL/TTL LOGIC ARRAYS FEATURES VARIOUS ARRAY SIZES 250, 500, 1000 e q u iva le n t gate version s to su p p o rt various c irc u it re q u ire m e n ts.

10d71

Abstract: MC1741CP1 MC1741C MCC1741C
Contextual Info: LINEAR INTEGRATED CIRCUIT CHIPS G E N E R A L D E S C R IP T IO N M o to r o la n o w o ffe rs a ve ry b ro a d se le c tio n o f lin e a r integ rated c ir c u it c h ip s . A m o n g th e ty p e s o f c ir c u its w h ic h c o m p o se th e lin e a r f a m ily th e re are:

Contextual Info: npEx HIGH VOLTAG E POW ER O P E R A TIO N A L A M P LIFIE R S ir A iA ü S & lte ïi APEX MICROTECHNOLOGY CORPORATION • APPLICATIONS HOTLINE 8 0 0 546-A PEX FEATURES • • • • • P E X " PA87 HIGH VOLTAGE — 450V +225V LOW COST LOW QUIESCENT CURRENT — 3.8m A MAX

d1708g

Abstract: nec d1708g UPD1708G NEC k 2134 transistor MPD1708G d1708 107986 KSS 213 nec 1708g ij9b
Contextual Info: P R ELIM IN A R Y S P E C IFIC A T IO N SEC / ELECTRON DEVICE MOS D IG ITA L IN TEGRATED C IR C U IT / / ^ ¿ ¿ p d i7 0 8 G Ä ^ - q i 3 , / ; P Ä ^ ^ A ^ d i 7 0 8 G - 2 1 3 P L L F R E Q U E N C Y S Y N T H E S IZ E R A N D C O N T R O L L E R p f Q p y