IR-LASER-DIODE 500MW Search Results

Contextual Info: 808nm Laser Diode 808nm IR Laser Diode LCU80E041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With Pb free glass cap, PD (3) Power Output: 500mW ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)

808nm 500mw laser diode

Contextual Info: 808nm Laser Diode 808nm IR Laser Diode LCU80E046D-preliminary •Specifications 1 Device: (2) Structure: (3) Power Output: Laser Diode TO-5（ 9.0mm ）,With Pb free glass cap, no PD 500mW ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃)

808nm laser diode

Abstract: 808nm 500mw laser diode 808nm 500mw 808nm 300 mw laser diode u-ld-80 808nm laser diode 808nm 80E04
Contextual Info: U-LD-80E045A-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E045A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With no glass cap, PD,easy decap (3) Power Output: 500mW ■External dimensions(Unit : mm)

808nm laser diode

Abstract: 808nm 808nm 500mw 300 mw IR Laser Diode 808nm 300 mw laser diode 808nm laser 820 nm laser diode 808 nm 1000 mw 808nm 500mw laser diode
Contextual Info: U-LD-80E041A-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E041A-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With Pb free glass cap, PD (3) Power Output: 500mW ■External dimensions(Unit : mm)

U-LD-80E044D-preliminary

Abstract: 808nm 500mw u-ld-80 500MW 808nm laser diode
Contextual Info: U-LD-80E044D-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E044D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With no glass cap, no PD, easy decap (3) Power Output: 500mW ■External dimensions(Unit : mm)

808nm 500mw

Abstract: 808 nm 1000 mw laser diode u-ld-80 808nm laser diode laser diode 808nm 808nm 500mw laser diode
Contextual Info: U-LD-80E046D-preliminary UNION OPTRONICS CORP. 808nm Laser Diode 808nm IR Laser Diode U-LD-80E046D-preliminary •Specifications 1 Device: Laser Diode (2) Structure: TO-5（ψ9.0mm ）,With Pb free glass cap, no PD, easy decap (3) Power Output: 500mW ■External dimensions(Unit : mm)

TO18 Laser 808nm 300 mw

Abstract: IR Laser diode laser diode bare chip
Contextual Info: U-CP-80E0075-preliminary UNION OPTRONICS CORP. 808nm Laser Diode Chips 808nm IR Laser Diode Chips U-CP-80E0075-preliminary •Specifications 1 Size : (2) Device: (3) Structure 300*600*100 m Laser diode bare chip Single ridge waveguide ■External dimensions(Unit : μm)

LCU83E051A

Abstract: laser diodes 300 mW
Contextual Info: Laser Diodes 830nm IR Laser Diode LCU83E051A-preliminary ϮSpecifications 1 Device: (2) Structure: Laser Diode TO-18ΰ 5.6mm ),With Pb free glass cap, PD ϮExternal dimensions(Unit : mm) ϮAbsolute Maximum Ratings(Tc=25к) Parameter Symbols Optical Output

Contextual Info: Laser Diodes 850nm IR Laser Diode LCU85E051A-preliminary •Specifications 1 Device: (2) Structure: Laser Diode TO-18（ 5.6mm ),With Pb free glass cap, PD ■External dimensions(Unit : mm) ■Absolute Maximum Ratings(Tc=25℃) Parameter Symbols Optical Output

IR-Laser-Diode 808nm 300mw

Abstract: 808nm 500mw IR-Laser-Diode 500mW IR-Laser-Diode 808nm IR-Laser-Diode 808nm 300mw laser diode 808nm 300mW 8052-1313-AU 500MW ir laser
Contextual Info: 8052-1313-AU 808nm 500mW IR Laser Diodes AUTO PACKAGE Specifications Device Package Type Laser Diode TO-5 φ9.0mm •Absolute Maximum Ratings(Tc=25℃) Symbols Characteristics Po Reverse Voltage Reverse Voltage Vr Voltage PIN PD Vr(PIN) Top Operating Temperature

808nm 1000mW

Abstract: 1000mW laser diode IR-Laser-Diode 808nm 1000mW laser 808nm 808nm laser diode 1000mw IR-Laser-Diode IR-Laser-Diode 500mW 1000-mW 808nm 500mw
Contextual Info: 8013-2323-AU 808nm 1000mW IR Laser Diodes AUTO PACKAGE Specifications Device Package Type Laser Diode TO-5 φ9.0mm •Absolute Maximum Ratings(Tc=25℃) Symbols Characteristics Po Reverse Voltage Reverse Voltage Vr Voltage PIN PD Vr(PIN) Top Operating Temperature

Contextual Info: SLD1332V Preliminary 670nm, 500mW Laser Diode Description The SLD1332V is a high power, visible light laser diode that has Quantum Well QW structure. 500mW high power is achieved by this QW structure. M-248 Features • High power Recommended optical power output: Po = 0.5W

Contextual Info: SLD1332V Preliminary 670nm, 500mW Laser Diode Description The SLD1332V is a high power, visible light laser diode that has Quantum Well QW structure. 500mW high power is achieved by this QW structure. M-248 Features • High power Recommended optical power output: Po = 0.5W

laser diode lifetime

Abstract: SLD1332V C6802 IEC60825-1 ld 670nm
Contextual Info: SLD1332V 670nm, 500mW Laser Diode Description The SLD1332V is a high power, visible light laser diode that has Quantum Well QW structure. 500mW high power is achieved by this QW structure. M-248 Features • High power Recommended optical power output: Po = 0.5W

Contextual Info: SLD1332V 670nm, 500mW Laser Diode Description The SLD1332V is a high power, visible light laser diode that has Quantum Well QW structure. 500mW high power is achieved by this QW structure. M-248 Features • High power Recommended optical power output: Po = 0.5W

Contextual Info: S o n y _SLD303V 500mW High Power Laser Diode Description S L D 3 0 3 V are gain-guided, high-power laser diodes fabricated by MOCVD. M O C V D : Metal O rganic Chem ical V apor Deposition Features • High power Recommended power output • Sm all operating current

Contextual Info: SLD303XT Sony. 500mW High Power Laser Diode D escription SLD303XT is a gain-guided, high-power laser diode w ith a built-in TE cooler. A new flat, square package w ith a low therm al resistance and an in-line pin configuration is employed. Fine tuning o f the wavelength is possible by

sony ic cx 770

Contextual Info: SLD303WT Sony, 500mW High Power Laser Diode D e s c r ip tio n S L D 3 0 3 W T is a gain-guided, high-power laser diode with a built-in T E cooler. Fine tuning of the w avelength is possible by controlling the laser chip temperature. Features • High power

laser diode sony cd

Abstract: laser diode 780 nm cd SLD303V SLD303V-1 SLD303V-2 SLD303V-21 SLD303V-3 300 mw IR Laser Diode
Contextual Info: SLD303V SONY, 500mW High Power Laser Diode For the availability of this product, please contact the sales office. D e s c rip tio n P a cka g e O u tlin e U n it: m m SLD303V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition

JD 803

Abstract: laser diode cd sony sl 803 A SLD303XT SLD303XT-1 SLD303XT-2 SLD303XT-21 SLD303XT-3 11SSI diode 4j
Contextual Info: SLD303XT SONY 500mW High Power Laser Diode_ For the availability of this product, please contact the sales office? D e scrip tio n S ID 3 0 3 X T is a gain-guided, high-power laser diode with a built-in T E cooler, A new fiat, square package

Contextual Info: SLD303V SONY, 500mW High Power Laser Diode Description Package Outline U n it: mm SLD303V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power o utp ut • Small operating current

LU96A74E-10R

Abstract: 974nm Oclaro 430mW 980 pump laser 940 nm 300mW laser diode
Contextual Info: Data Sheet High Power Uncooled 980nm Pump Laser Module in 10-Pin mini-BTF Package LU96*-10R Series Features: • Up to 500mW kink-free power over full operating temperature range  Operating temperature range from -5°C to +75°C case  Polarization maintaining (PM) fibre

SLD300

Abstract: SLD322V SLD322V-1 SLD322V-2 SLD322V-21 SLD322V-24 SLD322V-25 SLD322V-3
Contextual Info: SLD322V High Power Density 0.5W Laser Diode Description The SLD322V is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be

SLD322XT-24

Abstract: SLD300 SLD322XT SLD322XT-1 SLD322XT-2 SLD322XT-21 SLD322XT-25 SLD322XT-3
Contextual Info: SLD322XT High Power Density 0.5W Laser Diode Description The SLD322XT is a high power, gain-guided laser diode produced by MOCVD method∗1. Compared to the SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be