IR1 DIODE Search Results

10041

Contextual Info: Extract from the online catalog EMG 45-RELS/IR1-G 24 Order No.: 2950996 The illustration shows version EMG 45-RELS/IR1, with plug-in socket for industrial relay, size 1 Relay module, with 1 plug-in base for industrial relays size 1, contact:

Contextual Info: Extract from the online catalog EMG 45-RELS/IR1-G 24 Order No.: 2950996 The illustration shows version EMG 45-RELS/IR1, with plug-in socket for industrial relay, size 1 Relay module, with 1 plug-in base for industrial relays size 1, contact:

Contextual Info: Extract from the online catalog EMG 45-RELS/IR1-G 24 Order No.: 2950996 The illustration shows version EMG 45-RELS/IR1, with plug-in socket for industrial relay, size 1 Relay module, with 1 plug-in base for industrial relays size 1, contact:

diode 104

Abstract: mm2 relay RELAY DATA SHEET
Contextual Info: Extract from the online catalog EMG 45-RELS/IR1-G 24 Order No.: 2950996 The illustration shows version EMG 45-RELS/IR1, with plug-in socket for industrial relay, size 1 Relay module, with 1 plug-in base for industrial relays size 1, contact:

2SD868

Contextual Info: ¿2&M0SPEC HORIZONTAL DEFLECTION POWER TRANSISTORS NPN 2SD868 .specifically designed for use in color TV deflection circuits. FEATURES: * High Voltage: VCBO=1500V * Low Saturation Voltage :VCE sat =5.0V(Typ.) @ lc = 2.0 A * High Speed : t =1.0 us(Max.) @ l- p =2.0 A, IR1 = 0.6A

emg block diagram

Abstract: relay MODULE phoenix contact 29 66 01 6
Contextual Info: Module no:2950967 LabelId:2950967 Operator:Phoenix 14:08:44, Mittwoch, 1. März 2000 EMG 45-RELS/IR1-. M3 8 with plug-in socket for industrial relay size 1, 4 PDTs 21-21-21-21 Housing width 45 (IEC) rigid [mm ] solid Connection data 0.2-4 2 flexible stranded AWG

IR1 DIODE

Abstract: KLP-36M 34M2
Contextual Info: Light Emitting Diode InGaAlP/InGaN/GaAsAl KLP-36M2I-X-X KLP-34M2I is a 5 in 1 full colour LED and 2 ired . DIMENSIONS 3 2 1 1 Features • Transparent epoxy Encapsulent • High Optical Output 4 5 A 6 B 1 G IR1 R IR2 5 6 3 4 Applications • ATM • SENSOR

TC900ACPA

Abstract: TSC900 TC900A
Contextual Info: TELEDYNE COMPONENTS 3bE D • f iR1 7bD2 000747b E ■ TSC - T ' “? V V Ï> WTELEDYNE COMPONENTS TC900 LOW POWER, CHOPPER-STABILIZED OPERATIONAL AMPLIFIER FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The TC900 is a low power, precision operational am­

STM-16

Contextual Info: 2.5Gbps Single Mode SFF LC Transceiver IR1 C-13-2500/C-FDFB-SLC2 Features • Duplex LC Single Mode Transceiver • Small Form Factor Multi-sourced 2x5 Pin Package • 1310nm, DFB Laser • SONET /SDH STM-16 Compliant • Single +3.3V Power Supply • LVPECL/CML Differential level Inputs and Outputs

OC48/STM-16

Abstract: STM-16
Contextual Info: 2.5Gbps Single Mode SFF LC Transceiver IR1 C-13-2500/C-FDFB-SLC2 Features • Duplex LC Single Mode Transceiver • Small Form Factor Multi-sourced 2x5 Pin Package • 1310nm, DFB Laser • SONET /SDH STM-16 Compliant • Single +3.3V Power Supply • LVPECL/CML Differential level Inputs and Outputs

neophotonics

Abstract: G957
Contextual Info: www.neophotonics.com VERA / 092508 PTB3470-663 4 2W-LC/PC(+) OC-48 IR-1 / STM S-16.1 BiDi SFP Transceiver 1 Features 1.1. Transceiver unit with 1310nm DFB Laser diode transmitter 1490nm InGaAs PIN photodiode receiver 1.2. Compliant with SFP MSA and SFF-8472 with LC receptacle

marking code ir1

Abstract: marking code Iav 2.5/PB80 MINIBRIDGE
Contextual Info: HIGH POWER BRIDGE RECTIFIER DIODES MBS ‘MINI-BRIDGE’, DFS AND EDFS ENHANCED SERIES • ALL PARTS HAVE UL94 V-0 FLAMMABILITY RATING, AND ARE INCLUDED IN THE UL COMPONENT INDEX • ‘MINI-BRIDGE’ MBS SERIES HAVE 0.5A FORWARD CURRENT AND 35A SURGE RATING

IR1 DIODE

Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC131 HVC132 HVC133 HVM121WK HVM131S HVM131SR HVM132 HVM132WK HVM14 HVM14S HVM14SR HVM187S HVM187WK HVU131 HVU132 HVU133 HVU187 HVC200A HVC202A HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B

PT7320-31-1W

Abstract: PT7320-32-1W PT7320-31 PT7320 pt7320-32 G957 IEC825
Contextual Info: www.neophotonics.com VER B/ 111908 PT7320-31 2 -1W(+) OC-3 SR/IR-1 / STM S-1.1 SFP Transceiver 1. 1.1. Features Transceiver unit with independent 1310nm MQW FP Laser diode transmitter InGaAs PIN photodiode receiver 1.2. Compliant with SFP MSA and SFF-8472 with duplex LC receptacle

PT7420-61-2W

Abstract: PT7420 G957 G958 IEC825 NeoPhotonics PT7420-61
Contextual Info: www.neophotonics.com VER A/ 102307 PT7420-61-2W OC-48 IR-1 / STM S-16.1 SFP Transceiver 1 Features 1.1 Transceiver unit with independent 1310nm DFB Laser diode transmitter InGaAs PIN photodiode receiver 1.2 Compliant with SFP MSA and SFF-8472 with duplex LC receptacle

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 2013. MIL-PRF-19500/647E 21 June 2013 SUPERSEDING MIL-PRF-19500/647D 5 November 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

1N7069

Abstract: 35GQ100 ua 761
Contextual Info: INCH-POUND MIL-PRF-19500/761 22 JANUARY 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, TYPE 1N7069T1, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 January 2014. MIL-PRF-19500/645D 31 October 2013 SUPERSEDING MIL-PRF-19500/645C 24 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

PT7320

Abstract: PT7320-42-1W PT7320-41-1W PT7320-41 neophotonics SFP NeoPhotonics G958 IEC825 1w laser driver MQW Laser diode SFP
Contextual Info: www.neophotonics.com VER A/ 102307 PT7320-41 2 -1W OC-12 SR/IR-1 / STM S-4.1 SFP Transceiver 1 Features 1.1 Transceiver unit with independent 1310nm MQW FP Laser diode transmitter InGaAs PIN photodiode receiver 1.2 Compliant with SFP MSA and SFF-8472 with duplex LC receptacle

1N7064CCU3

Abstract: 30CLJQ045 1N7064CCU3C MIL-PRF-19500/754
Contextual Info: INCH-POUND MIL-PRF-19500//754 13 August 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, COMMON CATHODE, TYPE 1N7064CCU3 and 1N7064CCU3C, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments

1N6532 equivalent

Abstract: 1N6528 M100UFG JX6528 1n6535 jantxv RM117 1N6531 1N6535 1N6530 1N6532
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 9 January 2007. INCH-POUND MIL-PRF-19500/577C 6 October 2006 SUPERSEDING MIL-PRF-19500/577B 19 February 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY,

1N6659R

Abstract: MIL-STD-750 METHOD 2036 conditions E 1N6659 1N6658R 1N6657 1N6657R 1N6658 MIL-STD-750 METHOD 2036 CONDITION E
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 July 2009. MIL-PRF-19500/616G 17 April 2009 SUPERSEDING MIL-PRF-19500/616F 27 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, DUAL,

1N6771

Abstract: 1N6768 1N6768R 1N6769 1N6769R 1N6770 1N6771R T0-257AA
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 November 1998 MIL-PRF-19500/644A 16-August -1998 SUPERSEDING MIL-PRF-19500/644 18 April 1997 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,

1N6688

Abstract: 1N6689 MIL-STD-129 1N6689US
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 25 September 1997 INCH POUND MIL-PRF-19500/627A 25 June 1997 SUPERSEDING MIL-S-19500/627 18 November 1994 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,