IRF 042 Search Results

2SD798

Abstract: toshiba TLX
Contextual Info: TOSHIBA 2SD798 V V=1 > NPNHfiffiitffê # - V> h > 2SD798 o -f o ¡SjltEE^ -f 7 51 > íñ X : mm ^ / : hFE = 1 5 0 0 (ft/h ( V c E = 2V , I e = 2A ) & ft± Æ fê (T a = 25°C) ijr @ p2 77 /E _ â i â £ ïd V : W ä to irf fH #r , i a u 9 ^ ^ - X fkl Ü J±

IPG YLD-10

Contextual Info: HV-IMPULSE GENERATOR IPG 1218 IPG 1012 IPG 605 1.2 / 50 µs 0.25 kV - 12 kV 0.20 kV - 10 kV 0.20 kV - 6.25 kV Surge testing acc to: IEC 60664, VDE 0110, VDE 0411, VDE 0420 IEC 60335 : 2010 etc. Insulation test of inductors and coils Picture: incl. Option PA 503

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

irf 44 n

Abstract: 1329B IRLIZ34N IRLZ34N
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

Equivalent IRF 44

Abstract: IRLIZ34N 1329B IRLZ34N e4019 mosfet irf 150 irliz34
Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

CHN 430

Contextual Info: PD - 93874 IRGC100B120KB In te rn a tio n a l i ü R R e c t if ie r Die in Wafer Form Features 1200V • G E N 5 Non Punch T hrough NPT T e chn ology • Low V CE(onj lc(nom)= 1Û0A V,C E (o n )ty p . 2.2V @ ^C(nom) @25°C Motor Control IGBT Short Circuit Rated

PD78C10A

Abstract: 78C11 PD78c10AGQ PD78C11A PA78CP14GQ PA-78CP14GQ 78c10 R2M 45 ZC2C 87AD
Contextual Info: 8 t* 7 !• ‘ ì / ' s ' f — ? A / D 3 4 - ? /4 ' O //PD78CllA(A iil6tf>y hALU , ROM, RAM , A / D ^ V ^ - ^ , 'J 7 ^ " f £ 1 ^-y-70^ S I I L , è ) 2 hÌ W i h •# ? >J (ROM /RAM ) ^tÈSS’C è -&CMOS 8 t*7 b • - W ^ n 3 >•b°^- —^ T '’t 'o//PD78C10A(A) ¡¿/¿PD78C11A(A) ^ i>ROM$‘|^t’>t f pHn t',

IRGC100B120UB

Abstract: 185M
Contextual Info: PD - 93873A In te rn a tio n a l IOR R e c t i f i e r IRGC100B120UB Die in Wafer Form Features • 10ps S hort C ircuit C apability • S quare R B S O A • Positive V C E(on Tem perature C oefficient v,CE(on)typ “ k B en chm a rk E fficiency above 20 K H z

Contextual Info: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description

IRLIZ34N

Abstract: MOSFET IRF 630
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1329A IRLIZ34N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

lt 7209

Contextual Info: MSE ]> ISOCOn COMPONENTS LTD • MflâbSlO 0D0Q24b S ■ ISO CNX 72AX V v 'h k W ^ y x & i'. ■ r; ; - j.' OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT D E S C R IP T IO N The CNX 72AX is a optically coupled isolator consisting o f a G allium Arsenide infrared emitting

Contextual Info: • 7 f l 2 f l ,m fè Jt# 0007=121 b24 ■ R H M K /L ig h t Emitting Diodes SLC-22 SLC-22 Series yJv§ y R M îf$ ‘7 > 7 0 <t> 2.0mm Small-Sized Cylindrical Lamps Series L E D w • ÿM N 'S É H /D in 'en sio n s (Unit : mm) SLC -22 -> U - X « , SLC -26 -> U - X '

TCG085WV

Abstract: tft led KG057QV rgb led matrix 800x480 3,5 inch KCG047QV KCG089HV 8X12 8X14 KCG035QV
Contextual Info: T h e N e w Va l u e F r o n t i e r egKyacERa a *r«s New lineup 'J 7 & ! H i 7^ f 7 7 U *T- > a I ^ T F T j it liX 'f t § Wide screen, clear image. This Kyocera TFT LCD is suitable for a wide variety of applications. R o H S C o m p lia n t I R Q H S » » » g

ZTE MF 180 circuit

Abstract: JVC 0J HCJ crystal PD-50p ntl9 kyx 28 lt024 sumi jo 87AD uPD78C18
Contextual Info: A Ü *> oo ^ co Cd al I M I °» Cd M t—* Kl o< oj O 3 oo > S [NJ O r>i $* C/3 4 üSl4 V njg <5 V' V 'S ►d ö •O OO O i—i oo > a 4* X > Ö s U V » X1 1 Oi 4^- « A s wT- 00 -X» 4 ^ >*' ^ rj Pt m s V >i 4 V -A V' x >i A sil ^ K' \r ■fc r V 00 t

IRF3205 equivalent

Abstract: irf 630 IRF3205 IRFI3205 irf3205 mosfet transistor IRF3205 TO-220
Contextual Info: PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.008Ω

Contextual Info: PD - 9.1374B IRFI3205 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.008Ω

MOSFET IRFB 630

Abstract: IRFB 630 93804B MOSFET IRFB 630 Datasheet transistor IRF 630 AN1001 IRF1010 IRFB41N15D IRFIB41N15D IRFS41N15D
Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

IRFB 630

Abstract: MOSFET IRFB 630 Datasheet MOSFET IRFB 630 transistor IRF 630 120V DC to DC Converter 10A TO-220 FULLPAK Package AN1001 IRF1010 IRFB41N15D IRFIB41N15D
Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

IRFB 630

Contextual Info: PD - 93804B IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Applications l HEXFET Power MOSFET High frequency DC-DC converters VDSS RDS on max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

TMP90CS39F

Abstract: P101C p7fr TLCS-90 AA423 TMP90CS38F TMP90CS38T 07241 IOPORT32 toshiba M12
Contextual Info: T O S H IB A TMP90CS38/S39 CMOS 8-BIT MICROCONTROLLER TMP90CS38F / TMP90CS38T TMP90CS39F /TMP90CS39T 1. OUTLINE AND CHARACTERISTICS T M P 9 0 C S3 8 is a high speed, hig h performance 8-bit m icrocontroller developed for application in the control of various devices.

mb8841

Abstract: MB88401 MB88400 MB88401h MB8843 SBKA fujitsu 42pin ic data d7011 MBM2732A mb8844m
Contextual Info: FUJITSU NMOS SINGLE-CHIP 4-BIT MICROCOMPUTER The Fujitsu MB88400H series NMOS single-chip 4-bit microcomputer family is a upgrade version of the conventional MB8840 series. The currently available member of the MB88400 series is the MB88401 only. MB88401H contain a

mb8841

Abstract: fujitsu MB8841 MB88400 fujitsu DIP-42 fujitsu 42pin MBM2732A 001S07 fujitsu DIP-42 microcomputer
Contextual Info: FUJITSU MICROELECTRONICS ìlllllllllllllllllllllllllllillll FUJITSU 23E D • NMOS SINGLE-CHIP 4-BIT MICROCOMPUTER 374l7ba 0G1205S 2 MB88400 SERIES NMOS SINGLE-CHIP 4-BIT MICROCOMPUTER The Fujitsu MB88400H series NMOS single-chip 4-bit microcomputer family is a upgrade version

A23E

Abstract: Hitachi DSA00279
Contextual Info: Hitachi 16-Bit Single-Chip Microcomputer H8S/2678 Series H8S/2677 HD64F2677, HD6432677 H8S/2676 HD64F2676, HD6432676 H8S/2675 HD6432675 H8S/2673 HD6432673 H8S/2670 HD6412670 Hardware Manual — Specifications Common to All Series — ADE-602-193A Rev. 2.0

sumida 94V-0

Abstract: inverter using irfz44n MOSFET IRF9430 IRF7414 irfp460 dc welding circuit diagram IRFP264 inverter circuits IRFP450 inverter Three phase inverter using irfp450 mosfet Diagram Sumida ul94v-0 inverter IRF 544 N MOSFET
Contextual Info: International Rectifier The IGBT SIP & HEXPak Navigator Effective 8 September, EXISTING Products NEW Products UPCOMING Products POTENTIAL Products released to production in last 6-9 months to be released within next 3-4 months no current plans. see bus.mgmt.