IRF 100V 200A Search Results

irf 100v 200A

Abstract: IRF9530N 64mh
Contextual Info: IRFR/U5410PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage

irf 100v 200A

Abstract: transistor IRF 610 IRF 840 equivalent transistor irf 840 diode Marking code WT
Contextual Info: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD -95314A IRFR5410PbF IRFU5410PbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205Ω

IRFR5410

Abstract: IRFU5410
Contextual Info: PD -95314A IRFR5410PbF IRFU5410PbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205Ω

IRF 55v 200A

Abstract: IRFR P-Channel MOSFET IRFR5410 IRFU5410 irfr5410pbf irf 100v 200A
Contextual Info: PD -95314A IRFR5410PbF IRFU5410PbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR5410 Straight Lead (IRFU5410) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.205Ω

95613

Abstract: diode LE 78A
Contextual Info: PD - 95613 IRG4BC15UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

transistor irf 647

Abstract: 95613 TD 42 F
Contextual Info: PD - 95613 IRG4BC15UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

Contextual Info: PD -94916 IRG4IBC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, VGE = 15V

Contextual Info: PD -94916 IRG4IBC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, VGE = 15V

Contextual Info: PD - 95613 IRG4BC15UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

irf 100v 200A

Abstract: transistor irf 840 IRF 840 equivalent
Contextual Info: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

irf 100v 200A

Contextual Info: PD - 94909 IRG4BC20UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRF 504

Abstract: 005 418 irf 144
Contextual Info: PD- 95565 IRG4BC20UD-SPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: IRF830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

IRF820B

Abstract: irf 100v 200A
Contextual Info: IRF820B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

IRF840B

Contextual Info: IRF840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

IRF840B

Abstract: irf 940 IRFS840B
Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

IRF840B

Abstract: 2005Z IRF840B free download irf 44 ns IRFS840B 3232A irf 100v 200A
Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

2005Z

Abstract: IRF840B IRF series 2005 Z IRFS840B
Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Transistor Mosfet N-CH 400V 40A

Abstract: AN-994 IRFR120 R120 Transistor Mosfet N-CH 200V 40A IRF 548
Contextual Info: PD - 95192 IRG4RC10SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4

Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to