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    IRF 100V 300A Search Results

    IRF 100V 300A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN1300ANC
    		Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    LM5020MM-1/UKN8
    		Texas Instruments 100V Current Mode PWM Controller 10-MSOP Visit Texas Instruments
    LM5107MA/NOPB
    		Texas Instruments 100V / 1.4A Peak Half Bridge Gate Driver 8-SOIC -40 to 125 Visit Texas Instruments Buy
    LM5116MH/NOPB
    		Texas Instruments 6-100V Wide Vin, Current Mode Synchronous Buck Controller 20-HTSSOP -40 to 150 Visit Texas Instruments Buy
    CSD19533KCS
    		Texas Instruments 100V, N ch NexFET MOSFET™, single TO-220, 10.5mOhm 3-TO-220 -55 to 175 Visit Texas Instruments Buy

    IRF 100V 300A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRFR9120N

    Abstract: IRFU9120N
    Contextual Info: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V IRFR/U9120NPbF O-252AA) EIA-481 EIA-541. IRFR9120N IRFU9120N PDF

    irf 100v 300A

    Abstract: MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet
    Contextual Info: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V EIA-481 EIA-541. EIA-481. irf 100v 300A MOSFET IRF 630 IRFR9120N IRFU9120N IRFR9120NPBF IRF P-Channel mosfet PDF

    Contextual Info: PD-95020A IRFR9120NPbF IRFU9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		PD-95020A IRFR9120NPbF IRFU9120NPbF IRFR9120N) IRFU9120N) -100V EIA-481 EIA-541. EIA-481. PDF

    MOSFET IRF 380

    Contextual Info: PD - 95020 IRFR/U9120NPbF l l l l l l l l Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS(on) = 0.48Ω


    Original     		IRFR/U9120NPbF IRFR9120N) IRFU9120N) -100V O-252AA) EIA-481 EIA-541. EIA-481. MOSFET IRF 380 PDF

    IRF630B_FP001

    Abstract: IRF630 MOTOR CONTROL CIRCUIT IRF630B-FP001 IRF630B IRF630A ASM 630B IRF630 Fairchild
    Contextual Info: IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF630B/IRFS630B FP001 O-220 IRF630B IRF630BTSTU FP001 IRF630B_FP001 IRF630 MOTOR CONTROL CIRCUIT IRF630B-FP001 IRF630A ASM 630B IRF630 Fairchild PDF

    IRF*_FP001

    Contextual Info: IRF620B/IRFS620B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF620B/IRFS620B O-220 IRF620B FP001 IRF*_FP001 PDF

    irf 2203

    Abstract: IRF610B_FP001 IRF*_FP001 IRF 870 irf 146
    Contextual Info: IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF610B/IRFS610B IRF610B O-220-3 FP001 irf 2203 IRF610B_FP001 IRF*_FP001 IRF 870 irf 146 PDF

    Contextual Info: IRF830B/IRFS830B 500V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 4.5A, 500V, RDS on = 1.5Ω @VGS = 10 V Low gate charge ( typical 27 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability


    Original     		IRF830B/IRFS830B O-220 O-220F 54TYP 00x45Â PDF

    FQP5N20L

    Contextual Info: QFET TM FQP5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQP5N20L FQP5N20L PDF

    IRF630B

    Contextual Info: IRF630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		IRF630B IRF630B PDF

    IRF650B

    Contextual Info: IRF650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		IRF650B IRF650B PDF

    IRF650

    Contextual Info: IRF650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		IRF650B IRF650 PDF

    IRF620B

    Contextual Info: IRF620B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		IRF620B IRF620B PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    IRF610B

    Abstract: IRF 450 MOSFET
    Contextual Info: IRF610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		IRF610B IRF610B IRF 450 MOSFET PDF

    IRF640B

    Abstract: irfs640b IRF series
    Contextual Info: IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF640B/IRFS640B IRF640B irfs640b IRF series PDF

    IRFS820B

    Abstract: IRF820B
    Contextual Info: IRF820B/IRFS820B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF820B/IRFS820B IRFS820B IRF820B PDF

    IRFS830B

    Contextual Info: IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF830B/IRFS830B IRFS830B PDF

    IRFS630B

    Abstract: IRF630B
    Contextual Info: IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF630B/IRFS630B 10ner IRFS630B IRF630B PDF

    IRF610B

    Abstract: IRFS610B
    Contextual Info: IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF610B/IRFS610B IRF610B IRFS610B PDF

    IRF650B

    Abstract: IRFS650B
    Contextual Info: IRF650B / IRFS650B IRF650B / IRFS650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF650B IRFS650B IRFS650B PDF

    dc motor forward reverse control

    Abstract: 125 diode IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v N-Channel 40V MOSFET N-Channel MOSFET 200v IRF610B IRFS610B MOSFET 150 N IRF
    Contextual Info: IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF610B/IRFS610B dc motor forward reverse control 125 diode IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v N-Channel 40V MOSFET N-Channel MOSFET 200v IRF610B IRFS610B MOSFET 150 N IRF PDF

    IRF 470

    Abstract: IRF620B IRFS620B IRF series
    Contextual Info: IRF620B/IRFS620B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		IRF620B/IRFS620B IRF 470 IRF620B IRFS620B IRF series PDF

    IRF650

    Abstract: 125 diode converter circuit dc dc 100V dc motor forward reverse control IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v N-Channel 40V MOSFET N-Channel 40V MOSFET 32a p channel mosfet 100v N-Channel MOSFET 200v
    Contextual Info: IRF650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


    Original     		IRF650B IRF650 125 diode converter circuit dc dc 100V dc motor forward reverse control IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v N-Channel 40V MOSFET N-Channel 40V MOSFET 32a p channel mosfet 100v N-Channel MOSFET 200v PDF