IRF 210A Search Results

AN-994

Abstract: irf 210a
Contextual Info: IRF1405S/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information T HIS IS AN IRF 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 02, 2000 IN T HE AS S E MB L Y L INE "L " INT E RNAT IONAL RE CT IF IER L OGO Note: "P" in as s embly line

2SD798

Abstract: toshiba TLX
Contextual Info: TOSHIBA 2SD798 V V=1 > NPNHfiffiitffê # - V> h > 2SD798 o -f o ¡SjltEE^ -f 7 51 > íñ X : mm ^ / : hFE = 1 5 0 0 (ft/h ( V c E = 2V , I e = 2A ) & ft± Æ fê (T a = 25°C) ijr @ p2 77 /E _ â i â £ ïd V : W ä to irf fH #r , i a u 9 ^ ^ - X fkl Ü J±

irf 210a

Abstract: IRF 120A IRF 840 MOSFET irf 210 mosfet IRF 504 irf 840 if IRF 150a IRFB3206 smps 48v 12v irf 48v mosfet
Contextual Info: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRF 840 MOSFET

Abstract: IRFB3206PbF AN-994 IRFB3206 IRF Power MOSFET code marking irf 210a
Contextual Info: PD - 97097 IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D VDSS RDS on typ.

IRF 840 MOSFET

Abstract: irf 210 mosfet irf 840 if irf 1040 IRFB3206
Contextual Info: PD - 97097A IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRF 840 MOSFET

Abstract: IRF 120A irf 210 mosfet irf 840 if irf 210a IRF 150a AN-994 97097B
Contextual Info: PD - 97097B IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

irf 210 mosfet

Abstract: IRFB3206 AN-994 IRF 150a IRF 840 MOSFET irf 1040
Contextual Info: PD - 97097A IRFB3206PbF IRFS3206PbF IRFSL3206PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt

IRF GATE LOGIC

Abstract: AN-994 IRFR120 IRLR024N IRLU024N R120 U120 HEXFET POWER MOSFET IRF irf 210a
Contextual Info: PD - 95551B IRLR014NPbF IRLU014NPbF l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A

KA-3022EC-4

Abstract: KA-3022YC-4 KA-3022SGC
Contextual Info: 6 2 . 0 - 9 2 3x2.2m m SING LE COLOR SURFACE Kingbright M O UNT LED LAMPS KA-3022-4.5SF Package Dimensions Features •R ECTANG ULAR PACKAGE, 3MM BY 2.2 MM BY 1.5MM THICKNESS. r~ <£ O to „ — \T> O O 0in oo ^ c m r- o z i 01 - •W H IT E REFLECTOR TO MAXIMIZE REFLECTION

Contextual Info: PD - 95551 IRLR/U014NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TO SHIBA D I S C R E T E /OPTO TO SH IBA SEMICONDUCTOR TT DE § T D T O S O OOlbflfc.5 □ 99D 16862 F IE L D EFFEC T D” F 3 R-|/ TRA N SISTO R Y T F 6 2 1 S IL IC O N TECHNICAL DATA N CHANNEL MOS T Y P E (T T -M O S E )

F530S

Abstract: irf 5210 AN-994 irf 680
Contextual Info: IRF1405S/L Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance

2sc2562

Abstract: 2SA1012 A101 AC75 2SC2562 Toshiba
Contextual Info: 2SA1012 TOSHIBA 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat) = —0.4V (Max.) at I q = -3 A High Speed Switching Time : tgtg^l.O/^siTyp.)

2SA1293

Abstract: 2SC3258 AC75
Contextual Info: 2SA1293 TOSHIBA 2 S A 1 293 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS. • Low Collector Saturation Voltage : v CE(sat) = -0.4V (Max.) at Ie = -3 A High Speed Switching Time : tgtg^l.O/^siTyp.) Complementary to 2SC3258.

IRF540N

Abstract: IRFP140N
Contextual Info: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

AN-994

Abstract: IRFR120 IRFU120 IRLR024N IRLU024N U120 U014
Contextual Info: PD - 95551A IRLR/U014NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description

*lu024n

Abstract: irfu 210a
Contextual Info: PD - 95551A IRLR/U014NPbF HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Surface Mount IRLR024N Straight Lead (IRLU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 0.14Ω G ID = 10A S Description

irf 210a

Abstract: IRF 850 mosfet
Contextual Info: PD - 95490A IRF2204PbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D Features l l l l l l l VDSS = 40V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IRF 850 mosfet

Abstract: AN-1005 IRF2204PBF
Contextual Info: PD - 95490A IRF2204PbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

AN-1005

Abstract: irf 5210 irf 131A
Contextual Info: PD-95331A IRF1405SPbF IRF1405LPbF Typical Applications HEXFET Power MOSFET l Industrial Motor Drive D VDSS = 55V Benefits l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Contextual Info: PD-95331A IRF1405SPbF IRF1405LPbF HEXFET Power MOSFET Typical Applications l Industrial Motor Drive D VDSS = 55V Benefits l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IRF1405L

Abstract: IRF1405S 95331 irf 131A
Contextual Info: PD-95331 IRF1405SPbF IRF1405LPbF AUTOMOTIVE MOSFET Typical Applications O O O O O O Electric Power Steering EPS Anti-lock Braking System (ABS) Wiper Control Climate Control Power Door Lead-Free Benefits O O O O O O HEXFET Power MOSFET D VDSS = 55V RDS(on) = 5.3mΩ