IRF 640 MOSFET Search Results

IRF 850 mosfet

Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF

Contextual Info: PD- 96096 IRFZ24SPbF HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount 175°C Operating Temperature Fast Switching Lead-Free D VDSS = 60V RDS on = 0.10Ω G ID = 17A Description S Third Generation HEXFETs from International Rectifier

IRL 1530

Abstract: CI 74112 LD50A D2030
Contextual Info: IRLW/IZ44A Advanced Power MOSFET FEATURES BVdss = 60 V • Avalanche Rugged Technology 0.025 £2 ■ Rugged Gate Oxide Technology ^DS on = lD = 50 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175* «Operating Temperature

IRF 810

Abstract: IRF 545 ac power control applications 400v 16a IRF 640 mosfet 035H IRFP17N50L IRFPE30 PE30 t 125 16a 250v 99AF
Contextual Info: PD - 94322A IRFP17N50L SMPS MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications HEXFET Power MOSFET VDSS RDS on typ. Trr typ. ID 0.28Ω 500V Features and Benefits

SEC IRF 640

Contextual Info: IRF840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

sec irf840

Abstract: IRF840 MOSFET SEC IRF 640
Contextual Info: IRF840 Advanced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

irf 450a

Abstract: irf 940 pcb layout for TO 252AA
Contextual Info: PD - 95064 IRFR/U9310PbF P-Channel Surface Mount IRFR9310 l Straight Lead (IRFU9310) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D l VDSS = -400V RDS(on) = 7.0Ω G ID = -1.8A S Third Generation HEXFETs from International Rectifier

SEC IRF 640

Contextual Info: IRF840S A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

SEC IRF 640

Contextual Info: IRFW/I840A A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 0 .8 5 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

MOSFET IRF 635

Contextual Info: PD - 95085 IRLR/U3103PbF Logic-Level Gate Drive l Ultra Low On-Resistance l Surface Mount IRLR3103 l Straight Lead (IRLU3103) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 30V

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

IRF 640 mosfet

Abstract: SEC IRF 640
Contextual Info: PD - 94653C IRF3205Z IRF3205ZS IRF3205ZL Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 6.5mΩ G Description

SEC IRF 640

Contextual Info: PD - 94653C IRF3205Z IRF3205ZS IRF3205ZL Features l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 6.5mΩ G Description

25cl640

Abstract: IRF 640 mosfet
Contextual Info: 2 H A R R IS IR F 5 2 0 /5 2 Ï/5 2 2 /5 2 3 IR F520R /521R /522R /523R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 2 0 A B TOP VIEW • 8A and 9.2A , 8 0 V - 100V • rD S on) = 0 .2 7 f l and 0.36S1 DRAIN (FLANGE)

95A 640

Abstract: IRF 640 mosfet IRFP1405 SEC IRF 640
Contextual Info: PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 5.3mΩ

Contextual Info: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*

IRF 640 mosfet

Abstract: SEC IRF 640 AN-1005
Contextual Info: PD - 95509A IRFP1405PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 5.3mΩ G Description

irf246 N

Abstract: IRF246
Contextual Info: £3 H A R R IS August IRF244, IRF245 IRF246, IRF247 N-Channel Power MOSFETs Avalanche Energy Rated 1991 Package Features T0-204A A BOTTOM VIEW • 14A and 13A, 275V - 250V • rDS on = 0 .2 8 0 and 0 .3 4 0 • Single Puls« Avalanche Energy Rated • SOA is Power-Dlssipation Limited

mosfet yb

Abstract: SSF6N80A
Contextual Info: Advanced SSF6N80A P o w e r MOSFET FEATURES BV • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge — ^D S o n = lD = ■ E xtended S afe O pe ra ting A rea ■

SEC IRF 640

Abstract: IRFP1405 95A 640 95A Marking
Contextual Info: PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 5.3mΩ

Contextual Info: PD - 95810 AUTOMOTIVE MOSFET IRFP1405 HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 5.3mΩ

IRF igbt gate driver

Abstract: MOSFET IRF 630 SMD-247 st smd diode marking code ET MOSFET IRF 630 Datasheet MOSFET IRF 570 MOSFET IRF 603
Contextual Info: PD - 94351 IRFP17N50LS SMPS MOSFET HEXFET Power MOSFET Applications l l l l Switch Mode Power Supply SMPS Uninterruptible Power Supply High Speed Power Switching ZVS and High Frequency Circuit PWM Inverters l VDSS RDS(on) typ. Trr ID 500V 0.28Ω 170ns

motorola irf640

Abstract: 643 lt IRF 640 mosfet IRF640 mosfet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF640 IRF641 IRF642 IRF643 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS These TM OS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid

Contextual Info: PD- 94832 SMPS MOSFET IRFB11N50APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic