IRF250 POWER MOSFET Search Results

AVALANCHE TRANSISTOR

Abstract: transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR
Contextual Info: IRF250 Data Sheet March 1999 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 30A, 200V Ordering Information IRF250 TO-204AE • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

IRF224

Abstract: irf244 THOMSON DISTRIBUTOR 58e d IRF222 IRF352 irf362 THOMSON 58E THOMSON 58E CASE OUTLINE IRF220 IRF221
Contextual Info: THOMSON/ HtXhtl S flE D ISTRIBU TOR □ □T D • TCSK International m s Rectifier Power MOSFETs Hermetic Package TO-3 N-Channel Part Number IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 IRF232 2N6758 IRF230 IRF242 IRF240 IRF252 IRF250

irf260

Abstract: IRF260 N IRF250 MOSFET IRF250 IRF251 IRF252 IRF253 irf26
Contextual Info: 3875081 D1 G E SOLID Ï e § STATE BÔ 7S DB 1 0 D l f l E c]4 fi File Number 0 1E 18294 - - 1825 D aianaara kower MOSFETs IRF250, IRF251, IRF252, IRF253 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

IRF250

Abstract: mosfet 30a 200v 200mJ irf250 datasheet mosfet 30A transistor irf250 330mh avalanche diode 30A mosfet 50v 30a
Contextual Info: IRF250 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)

Contextual Info: IRF250 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) 1 VDSS ID(cont) RDS(on)

TO-204AE

Contextual Info: NATL N-Channel Power MOSFETs N-Channel Power MOSFETs Continued IRFP441 IRF442 IRF840 IRF841 IRF842 IRF843 2N6764 IRFP1S0 IRFP151 IRF152 2N6765 2N6766 IRF250 IRFP250 IRF251 - 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600

Contextual Info: if* ? S IRF250, IRF251, IRF252, IRF253 Semiconductor y y 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 25A and 30A, 150V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate

IRF250

Abstract: transistor irf250 IRF252 IRF250 power MOSFET IRF251 Application of irf250 irfz52 IRF253 1RF252 he250
Contextual Info: •Standard Power MOSFETs File N u m b e r 1825 IRF250, IRF251, IRF252, IRF253 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 25 A and 30 A, 150 V - 200 V rDs on = 0.085 fi and 0.120 fi

IRF250

Abstract: MOSFET IRF250 IRF250 power MOSFET 1RF250 5104 mosfet b16a diode IRF250 MOSFET IRF250 "on semiconductor" IRF251 IRF252
Contextual Info: 7964142 Tñ SAMSUNG SEMICONDUCTOR IN C 9 8 D 051 O 4 DE | ? c]t.4145 DDDSIDM 4 I p T “ 3 7- N-CHANNEL POWER MOSFETS IRF250/251/252/253 FEATURES Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance

Contextual Info: IRF250 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)30 I(DM) Max. (A) Pulsed I(D)19 @Temp (øC)100 IDM Max (@25øC Amb)120 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150# Minimum Operating Temp (øC)-55

Contextual Info: nil Étti IN I SEM E IRF250 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 200V 30A V DSS ID(cont) 0.085Q ^D S (on) FEATURES M * 20.32 (0.800) 118.80 a an in ia < w (0.740) dia. • HERMETICALLY SEALED T O -3 METAL PACKAGE ^ • SIMPLE DRIVE REQUIREMENTS

IRF250

Abstract: F25-3
Contextual Info: 7964142 Tñ S AM S U N G DE | ? c] t . 4 1 4 5 S E M I CONDUCTOR DDDS1DM 4 INC 9 8D 0 51 0 4 0 T “ 3 7- N-CHANNEL POWER MOSFETS I IRF250/251 /252/253 FEA TU R E S Low RoS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

1RF250

Abstract: IRF250 motorola MOSFET IRF250 transistor irf250 irf 250 MOSFET IRF 635 SSR -25 DD
Contextual Info: MOTOROLA SC X S T R S /R 14E D I F b 3 ti7 E 5 4 QDÔTbLi fc, | MOTOROLA •a SEM ICONDUCTOR TECHNICAL DATA IRF250 IRF251 IRF252 IRF253 Pow er Field E ffect Transìstor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for low

IRFP250

Abstract: IRF250 MOSFET IRF250 IRF250 power MOSFET irfp250 mosfet IRF250 MOSFET
Contextual Info: IRFP250/251/252/253 IRF250/251/252/253 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • L o w e r R d s ON Im p ro ve d in d u c tiv e ru g g e d n e s s F ast s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tru c tu re L o w e r in p u t c a p a c ita n c e

71 DT4

Abstract: SHD2251 IRFY044 IRFY140 IRFY240 IRFY340 IRFY440 SHD2261 SHD2262 SHD2263
Contextual Info: 1997 • SHORT FORM CATALOG SENSITRON SEMICONDUCTOR HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE ~ ~ CONTINUOUS DRAIN CURRENT MAXIMUM POWER DISSIPATION 'd PD 60 100 200 400 500 800 900 1000 100 100 100 200

IRF250

Abstract: IRF252
Contextual Info: HE 0 I 4ÖSS45S G G C m i a Data Sheet No. PD-9.321H ö I INTERNATIONAL R E C T I F I E R I«R INTERNATIONAL RECTIFIER T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF250 IRF251 IRF252 IRF253 N-CHANNEL Product Summary 200 Volt, 0.085 Ohm HEXFET

IRF250

Abstract: irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247
Contextual Info: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International

Contextual Info: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International

IRF250

Abstract: IRF250 motorola IRF250 power MOSFET MOSFET IRF250 IRF250.253
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF250 IRF251 IRF252 IRF253 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Pow er FETs are desig n ed fo r lo w vo lta g e , h ig h speed p o w e r s w itc h in g a pp licatio n s

irf440

Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t

transistor irf250

Abstract: IRF251 IRF250..251 D86FN2 25 fmr 160 IRF250 C063
Contextual Info: M U T FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. IRF250.251 D86FN2.M2 30 AMPERES

IRF250R

Abstract: free IR circuit diagram
Contextual Info: [ 2 H A R R I S IR F 2 5 0 /2 5 1 /2 5 2 /2 5 3 IR F 2 5 0 R /2 5 1 R /2 5 2 R /2 5 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 0 4 A E BOTTOM VIEW • 25A and 30A, 150V - 200V • ros on = 0 .0 8 5 fl and 0 .1 2 0 fi

IRF series

Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
Contextual Info: IOR IRF Series Devices IRF Series Data Sheet a lp h a -n u m e ric order. W h e re the inform ation is d e v ic e spe c ific, w e h av e a s s ig n ed a num eric c h a ra cte r for the graph and an alph a c h a ra cte r to a given d evice. S e e T a b le A below . W h e re graphs

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”