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    IRF520 SWITCH Search Results

    IRF520 SWITCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DG301AAA Rochester Electronics DG301AAA - CMOS Analog Switch Visit Rochester Electronics Buy
    ICL7660SMTV Rochester Electronics LLC Switched Capacitor Converter, 0.02A, 17.5kHz Switching Freq-Max, CMOS, MBCY8, PACKAGE-8 Visit Rochester Electronics LLC Buy

    IRF520 SWITCH Datasheets Context Search

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    irf520 mosfet

    Abstract: IRF520 circuit diagram irf520 irf520 switch transistor equivalent irf520 MOSFET IRF520
    Text: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE


    Original     		PDF IRF520 O-220 irf520 mosfet IRF520 circuit diagram irf520 irf520 switch transistor equivalent irf520 MOSFET IRF520

    irf520 mosfet

    Abstract: irf520 switch IRF520
    Text: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE


    Original     		PDF IRF520 O-220 irf520 mosfet irf520 switch IRF520

    IRF520 mosfet

    Abstract: IRF520
    Text: IRF520 N-CHANNEL 100V - 0.115 Ω - 10A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE IRF520 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.27 Ω 10 A TYPICAL RDS(on) = 0.115Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE


    Original     		PDF O-220 IRF520 O-220 IRF520 mosfet IRF520

    IRF520

    Abstract: transistor IRF520 circuit diagram irf520 IRF520 application note IRF520FI
    Text: IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.27 Ω < 0.27 Ω 10 A 7A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF IRF520 IRF520FI 100oC 175oC O-220 ISOWATT220 IRF520 transistor IRF520 circuit diagram irf520 IRF520 application note IRF520FI

    irf52 0

    Abstract: No abstract text available
    Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET [ /Title IRF52 0 /Subject (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (9.2A, 100V, 0.270 Ohm, NChannel Power MOSFET, TO220AB , Intersil Corporation) /Creator ()


    Original     		PDF IRF520 IRF52 O220AB IRF520 irf52 0

    Power MOSFETs Application Notes irf520

    Abstract: IRF520 application note irf520 mosfet IRF520 TB334
    Text: IRF520 Data Sheet January 2002 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF520 TA09594. Power MOSFETs Application Notes irf520 IRF520 application note irf520 mosfet IRF520 TB334

    Power MOSFETs Application Notes irf520

    Abstract: No abstract text available
    Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF520, SiHF520 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Power MOSFETs Application Notes irf520

    irf520 mosfet

    Abstract: SiHF520 IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520
    Text: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature


    Original     		PDF IRF520, SiHF520 O-220 O-220 18-Jul-08 irf520 mosfet IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520

    transistor IRF520

    Abstract: irf520 mosfet 37ag transistor equivalent irf520 IRF520 TB334
    Text: IRF520 Data Sheet November 1999 9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET 1574.4 Features • 9.2A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF520 TA09594. transistor IRF520 irf520 mosfet 37ag transistor equivalent irf520 IRF520 TB334

    circuit diagram irf520

    Abstract: GC233
    Text: SGS-THOMSON IRF520 IRF520FI IttJtSTMtKS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI Voss R d S o ii Id 100 V 100 V 0.27 Q 0.27 Q 10 A 7 A • . ■ . . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF IRF520 IRF520FI IRF520FI O-220 ISOWATT220 IRF520/FI GC2339G GC20260 GC20270 circuit diagram irf520 GC233

    Untitled

    Abstract: No abstract text available
    Text: 7^237 G G M S b 4 b 50b • S G T H SGS-THOMSON [MOœmigTOôfflDûi IRF520 IRF520FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI . . ■ . . . . V d ss RDS on Id 100 V 100 V < 0.27 a < 0.27 Q 10 A 7 A TYPICAL RDS(on) = 0.23 Q AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF IRF520 IRF520FI IRF520/FI

    IRF520

    Abstract: irf521 IRF523 F522
    Text: N-CHANNEL POWER MOSFETS IRF520/521/522/523 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF520/521/522/523 IRF520 IRF521 IRF522 IRF523 IRF520/5217522/523 F522

    irf521

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS IRF520/521 FEATURES • • • • • • • Lower R dsion Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF520/521 IRF520 IRF521 002fl7SD irf521

    TP10N10E

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF520 Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate This TM O S Power FET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		PDF IRF520 b3b725H TP10N10E

    IRF520

    Abstract: irf520 mosfet mosfet irf520 irf521 power MOSFET IRF520
    Text: N-CHANNEL POWER MOSFETS IRF520/521/522/523 FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF520/521/522/523 O-220 IRF520 IRF521 IRF522 IRF523 IRF520/521Z522/523 irf520 mosfet mosfet irf520 power MOSFET IRF520

    IRF520

    Abstract: International Rectifier IRF520 IRF52
    Text: PD-9.313K International S Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 1 0 0 V R DS on = 0 .2 7 Q


    OCR Scan     		PDF IRF520 0-27Q O-220 IRF520 International Rectifier IRF520 IRF52

    1RF520

    Abstract: IRFS20 1rf520 transistor RF521 transistor IRF520 IRF522 mosfet 1000 amper IRFS22 IRF520 IRF521
    Text: -F ile N u m b e r Standard Power MOSFETs IRF520, IRF521, IRF522, IRF523 1574 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -CHANNEL ENHA N C EM EN T MODE


    OCR Scan     		PDF IRF520, IRF521, IRF522, IRF523 0V-100V IRF522 IRF523 1RF520 IRFS20 1rf520 transistor RF521 transistor IRF520 mosfet 1000 amper IRFS22 IRF520 IRF521

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    1RF520

    Abstract: AVW smd smd ht1 AN-994 IRF520 IRF520S SMD-220 ScansUX1012
    Text: PD-9.313K International raR Rectifier IRF520 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^ dss - 100 V R DS on “ 0 -2 7 Î2


    OCR Scan     		PDF IRF520 T0-220 1RF520 AVW smd smd ht1 AN-994 IRF520S SMD-220 ScansUX1012

    International Rectifier IRF520

    Abstract: No abstract text available
    Text: International i«R Rectifier MÔ55452 0 0 m b 4 4 343 m i N R HEXFET Power MOSFET • • • • • • PD-9.313K IRF520 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling


    OCR Scan     		PDF IRF520 O-220 S54S2 International Rectifier IRF520

    IRF521

    Abstract: IRF522 irf520 IRF523 RP523 R520 R521 irf520 power G-D-S TO-92 TO-220 3 lead bend
    Text: SUPERTEX INC 01 ÇhSupertex inc. D e | fl773STS GOOlSflH 0 IRF520 IRF521 IRF522 IRF523 R520 R521 Preliminary N-Channel Enhancement-Mode Vertical DMOS Power FETs T “ 3 f-t* Ordering Information ^DSS ^ Order Number / Package bvms ^DS ON (max) *D(ON) (min)


    OCR Scan     		PDF 773STS IRF520 IRF521 IRF522 IRF523 O-220 IRF522 IRF523 RP523 R520 R521 irf520 power G-D-S TO-92 TO-220 3 lead bend

    irf5205

    Abstract: IRF520 IRF521 IRF523 IRF522
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF520 IRF521 IRF522 IRF523 P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancement-Mode Silicon Gate TMOS These TMOS Power FETs are designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid


    OCR Scan     		PDF IRF520 IRF521 IRF522 IRF523 IRF520, IRF522, irf5205 IRF523

    IRF50

    Abstract: irf521 irf520 pin configuration IRF521 irf522 irf523
    Text: ZETE X S E M I C O N D U C T O R S =ISI> D • ^70570 0 0 0 5 5 4 7 0 ■ ZETB 95D 0 5 5 4 7 N-channel enhancement mode vertical DMOS FET IRF520 IRF521 IRF522 IRF523 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		PDF IRF520 IRF521 IRF522 IRF523 IRF620 IRF523 O-220 IRF50 pin configuration IRF521

    Untitled

    Abstract: No abstract text available
    Text: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM


    OCR Scan     		PDF 71TMHD IRF520