IRF7101 Search Results

EIA-541

Abstract: IRF7101 MS-012AA
Contextual Info: PD - 95162 IRF7101PbF Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3

f7101

Abstract: MOSFET IRF7101 f-7101 MS-012AA
Contextual Info: SO-8 MS-012AA EXAMPLE: THIS IS AN IRF7101 (MOSFET) ñ ñ YWW ññ INTERNATIONAL RECTIFIER LOGO IOR xxxx O F7101 yyyy DATE CODE (YWW) Y = LAST DIGIT OF THE YEAR WW = WEEK LOT CODE PART NUMBER

IRF7101

Abstract: MS-012AA
Contextual Info: PD - 9.871B IRF7101 HEXFET Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 20V

IRF7101

Contextual Info: P D -9.871 B International IQ R Rectifier IRF7101 HEXFET Power MOSFET • • • • Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount • Available in Tape and Reel • Dynamic dv/dt Rating • Fast Switching V dss = 20V

EIA-541

Abstract: IRF7101 MS-012AA
Contextual Info: IRF7101PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time

IRF7101

Contextual Info: Part Marking EXAM PLE: THIS IS AN IRF7101 D ATE CODE YWW Y = WW = IN T E R N A T IO N A L REC TIFIER LOGO L A S T DIGIT OF THE Y E A R WEEK LO T CODE y y y y P A R T N U M B ER

IRF7101

Abstract: MS-012AA GD 1 H-010
Contextual Info: PD - 9.871B IRF7101 HEXFET Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 2 7 3 6 4 5 D1 VDSS = 20V

Contextual Info: IRF7101 Transistors Matched Pair of N-Channel Enhancement MOSFETs V BR DSS (V)20 V(BR)GSS (V) I(D) Max. (A)3.5# I(DM) Max. (A) Pulsed I(D)2.3 @Temp (øC)100 IDM Max (@25øC Amb)14# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0# Minimum Operating Temp (øC)-55õ

Contextual Info: PD 9.871 A International S»1 Rectifier IRF7101 H EXFET Pow er M O SFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual N-Channel M OSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching S1H

Contextual Info: TPS2330, TPS2331 SINGLE HOT SWAP POWER CONTROLLER WITH CIRCUIT BREAKER AND POWER-GOOD REPORTING SLVS277 – MARCH 2000 features D D D D D D D D D D D OR PW PACKAGE TOP VIEW Single-Channel High-Side MOSFET Driver Input Voltage: 3 V to 13 V Inrush Current Limiting With dv/dt Control

TPS2300

Abstract: TPS2300IPW TPS2301 TPS2301IPW TPS2310IPW TPS2311IPW TPS2320IPW TPS2330IPW
Contextual Info: TPS2300, TPS2301 DUAL HOT SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING SLVS265D – FEBRUARY 2000 – REVISED MARCH 2001 PW PACKAGE TOP VIEW features D D D D D D D D D D Dual-Channel High-Side MOSFET Drivers 1 20 DISCH1

TPS2300IPW

Abstract: TPS2301IPW TPS2310 TPS2310IPW TPS2311 TPS2311IPW TPS2320IPW TPS2330IPW
Contextual Info: TPS2310, TPS2311 DUAL HOT SWAP POWER CONTROLLERS WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING SLVS275D – FEBRUARY 2000 – REVISED MARCH 2001 PW PACKAGE TOP VIEW features D D D D D D D D D D Dual-Channel High-Side MOSFET Drivers 1 20 DISCH1

TPS2300IPW

Abstract: TPS2310IPW TPS2320ID TPS2320IPW TPS2330 TPS2330ID TPS2330IPW TPS2331 TPS2331IPWRG4
Contextual Info: TPS2330 TPS2331 www.ti.com . SLVS277F – MARCH 2000 – REVISED NOVEMBER 2006 SINGLE HOT-SWAP POWER CONTROLLERS WITH

ic 94101

Abstract: innovative dro IRF7342D2
Contextual Info: PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -55V

IRF7476

Abstract: TH 2190 mosfet F7101 IRF7101 MS-012AA
Contextual Info: PD - 94311 IRF7476 HEXFET Power MOSFET Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance

IRF8113

Abstract: F7101 IRF7101
Contextual Info: PD - 94637 IRF8113 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage

IRF 4310

Abstract: F7101 IRF7101 IRF7832
Contextual Info: PD - 94594A IRF7832 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 4.0m:@VGS = 10V 30V 1 8 S 2 7 S 3 6 4 5 S Benefits l Very Low RDS on at 4.5V VGS

IRF7101

Abstract: IRF7324D1
Contextual Info: PD- 91789 IRF7324D1 PRELIMINARY FETKY MOSFET / Schottky Diode l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint 1 8 K A 2 7 K S 3 6 D G 4 5 D A VDSS = -20V RDS on = 0.18Ω

MS-012AA

Abstract: AN1001 EIA-541 F7101 IRF7101 IRF7491 IRF74
Contextual Info: PD - 94537 IRF7491 HEXFET Power MOSFET Applications High frequency DC-DC converters VDSS RDS on max ID 80V 16mΩ@VGS = 10V 9.7A Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

Contextual Info: IRF7309PbF-1 VDS RDS on max (@VGS = 10V) Qg (max) ID (@TA = 25°C) N-CH 30 P-CH -30 V V 0.05 0.10 Ω 25 25 nC 4.0 -3.0 A HEXFET Power MOSFET SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free

Contextual Info: IRF7425PbF-1 HEXFET Power MOSFET VDS -20 RDS on max V 1 8 S 2 7 D S 3 6 D G 4 5 D 8.2 (@VGS = -4.5V) mΩ RDS(on) max 13 (@VGS = -2.5V) Qg (typical) ID (@TA = 25°C) 87 nC -15 A Package Type IRF7425PbF-1 SO-8 SO-8 Top View Features Industry-standard pinout SO-8 Package

Contextual Info: IRF7416PbF-1 HEXFET Power MOSFET VDS -30 RDS on max (@VGS = -10V) Qg (typical) ID (@TA = 25°C) V 0.020 Ω 61 nC -10 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

Contextual Info: PD – 91746D IRF7805 HEXFET Chip-Set for DC-DC Converters • • • • N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented