IRF7103IPBF Search Results
IRF7103IPBF Price and Stock
International Rectifier IRF7103IPBFHEXFET POWER MOSFET Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
IRF7103IPBF | 6,175 |
|
Get Quote | |||||||
![]() |
IRF7103IPBF | 1,444 |
|
Get Quote |
IRF7103IPBF Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|---|
IRF7103IPBF | International Rectifier | Original | 265.77KB | 9 |
IRF7103IPBF Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: PD -96085A IRF7103IPbF l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 |
Original |
-96085A IRF7103IPbF EIA-481 EIA-541. | |
Contextual Info: PD -96085A IRF7103IPbF HEXFET Power MOSFET l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 |
Original |
-96085A IRF7103IPbF EIA-481 EIA-541. | |
Contextual Info: PD -96085 IRF7103IPbF l l l l l l l l Adavanced Process Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET Power MOSFET S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 |
Original |
IRF7103IPbF EIA-481 EIA-541. |