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    IRF840 MOSFET Search Results

    IRF840 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
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    IRF840 MOSFET Price and Stock

    General Transistor Corp IRF840

    MOSFET - N-Channel – Vdss 500V – Id 8A - Drive voltage 10 V – Vgs 4 V - Power dissipation 125 W –TO 220AB - Through hole - 3 pins
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com IRF840 1,778
    • 1 $11.55
    • 10 $6.67
    • 100 $2.08
    • 1000 $2.08
    • 10000 $2.08
    		Buy Now

    IRF840 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF840

    Abstract: irf840n high voltage pulse with irf840 SWITCHING WELDING SCHEMATIC BY MOSFET IRF840 N
    Text: IRF840 N - CHANNEL 500V - 0.75Ω - 8A - TO-220 PowerMESH MOSFET TYPE IRF840 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED


    Original     		PDF IRF840 O-220 O-220 IRF840 irf840n high voltage pulse with irf840 SWITCHING WELDING SCHEMATIC BY MOSFET IRF840 N

    Application of irf840

    Abstract: irf840 power supply TRANSISTOR mosfet IRF840 datasheet irf840 mosfet IRF840 TA17425 TB334
    Text: IRF840 Data Sheet July 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRF840 NOTE: PACKAGE TO-220AB 2312.3 Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRF840 O-220AB Application of irf840 irf840 power supply TRANSISTOR mosfet IRF840 datasheet irf840 mosfet IRF840 TA17425 TB334

    IRF840

    Abstract: IRF840 N Application of irf840 SWITCHING WELDING SCHEMATIC BY MOSFET irf840n datasheet irf840 mosfet high voltage pulse with irf840 datecode G1
    Text: IRF840  N - CHANNEL 500V - 0.75Ω - 8A - TO-220 PowerMESH MOSFET TYPE IRF840 • ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.85 Ω 8 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF IRF840 O-220 IRF840 IRF840 N Application of irf840 SWITCHING WELDING SCHEMATIC BY MOSFET irf840n datasheet irf840 mosfet high voltage pulse with irf840 datecode G1

    IRF840

    Abstract: Application of irf840 datasheet irf840 mosfet datasheet mosfet irf840 st irf840 2c14 mosfet
    Text: IRF840 N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh II MOSFET TYPE IRF840 • ■ ■ ■ ■ VDSS RDS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF IRF840 O-220 IRF840 Application of irf840 datasheet irf840 mosfet datasheet mosfet irf840 st irf840 2c14 mosfet

    IRF840

    Abstract: Application of irf840 MOSFET IRF840 datasheet irf840 mosfet transistor irf840 IRF8401 SCHEMATIC irf840
    Text: IRF840 N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh II MOSFET TYPE IRF840 • ■ ■ ■ ■ VDSS RDS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF IRF840 O-220 IRF840 Application of irf840 MOSFET IRF840 datasheet irf840 mosfet transistor irf840 IRF8401 SCHEMATIC irf840

    IRF840

    Abstract: datasheet irf840 mosfet st irf840 Application of irf840
    Text: IRF840 N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh II MOSFET TYPE IRF840 • ■ ■ ■ ■ VDSS RDS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF IRF840 O-220 IRF840 datasheet irf840 mosfet st irf840 Application of irf840

    power MOSFET IRF840

    Abstract: IRF840
    Text: IRF840 N-CHANNEL 500V - 0.75Ω - 8A TO-220 PowerMesh II MOSFET TYPE IRF840 • ■ ■ ■ ■ VDSS RDS on ID 500 V < 0.85 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED


    Original     		PDF IRF840 O-220 power MOSFET IRF840 IRF840

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFET IRF840 MOSFET N-Channel TO-220 FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement 1. G 2. D


    Original     		PDF O-220 IRF840 O-220

    Application of irf840

    Abstract: transistor irf840 datasheet irf840 mosfet irf840 power supply IRF840
    Text: DC COMPONENTS CO., LTD. IRF840 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 500 Volts RDS on = 0.8 Ohm ID = 8.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements


    Original     		PDF IRF840 O-220AB Application of irf840 transistor irf840 datasheet irf840 mosfet irf840 power supply IRF840

    IRF840

    Abstract: Application of irf840 datasheet irf840 mosfet equivalent irf840 IRF840 MOSFET irf840 power supply high voltage pulse with irf840 transistor irf840 MOSFET IRF840 single HIGH SPEED POWER MOSFET
    Text: IRF840 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination ‹ Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability ‹ Avalanche Energy Specified without degrading performance over time. In addition, this


    Original     		PDF IRF840 IRF840 Application of irf840 datasheet irf840 mosfet equivalent irf840 IRF840 MOSFET irf840 power supply high voltage pulse with irf840 transistor irf840 MOSFET IRF840 single HIGH SPEED POWER MOSFET

    Application of irf840

    Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
    Text: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRF840 TA17425. Application of irf840 TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF840 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN


    Original     		PDF O-220 IRF840 O-220

    Untitled

    Abstract: No abstract text available
    Text: IRF840 RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Ease of Paralleling BVDSS D RDS ON Fast Switching Characteristic Simple Drive Requirement ID G 500V 0.85 8A S Description G APEC MOSFET provide the power designer with the best combination of fast


    Original     		PDF IRF840 O-220 100us

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF840 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN


    Original     		PDF O-220 IRF840 O-220

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    100 Amp current 1300 volt diode

    Abstract: IRF840 100 Amp current 500 volt diode
    Text: IRF840 Power MOSFET VDSS = 500V, RDS on = 0.85 ohm, ID = 8.0 A D G S N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Leakage Current Gate to Source Leakage Current IDSS IGSS Gate Charge Gate to Source Charge


    Original     		PDF IRF840 250VDC, 25VDC, 400VDC, 10VDC O-220-AB 100 Amp current 1300 volt diode IRF840 100 Amp current 500 volt diode

    Application of irf840

    Abstract: irf840 IRF840PBF MOSFET IRF840 irf840 vishay datasheet irf840 mosfet SiHF840 SiHF840-E3 Switching Application of irf840
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 O-220 O-220 18-Jul-08 Application of irf840 irf840 IRF840PBF MOSFET IRF840 irf840 vishay datasheet irf840 mosfet SiHF840-E3 Switching Application of irf840

    Application of irf840

    Abstract: IRF840 irf840 equivalent irf840 power supply MOSFET 400V TO-220
    Text: IRF840 RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Ease of Paralleling D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 500V RDS ON 0.85Ω ID G 8A S Description APEC MOSFET provide the power designer with the best combination of fast


    Original     		PDF IRF840 O-220 50racteristics 100us Application of irf840 IRF840 irf840 equivalent irf840 power supply MOSFET 400V TO-220

    IRF840PBF

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF840, SiHF840 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF840PBF

    TA17425

    Abstract: No abstract text available
    Text: IRF840 Semiconductor Data Sheet July 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET • 8 A ,5 0 0 V Ordering Information IRF840 NOTE: TO-220AB • r DS ON = 0 .8 5 0 i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds


    OCR Scan     		PDF IRF840 O-220AB TB334 TA17425. TA17425

    IRF840

    Abstract: IRF840 MOSFET 250M IRF841 power MOSFET IRF840 DS400
    Text: N-CHANNEL POWER MOSFETS IRF840/841 FEATURES TO-220 • Lower R d s o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRF840/841 IRF840 IRF841 G02fl24G IRF840 MOSFET 250M power MOSFET IRF840 DS400

    IRF840

    Abstract: high voltage pulse with irf840 IRF841 IRF840-3 RISE TIME OF IRF840 MOSFETS IRF840 n-channel mosfet IRF840 MOSFETs IRF843 IRF842
    Text: N-CHANNEL POWER MOSFETS IRF840/841/842/843 FEATURES • • • • • • • Lower R ds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRF840/841/842/843 IRF840 IRF841 IRF842 IRF843 high voltage pulse with irf840 IRF840-3 RISE TIME OF IRF840 MOSFETS IRF840 n-channel mosfet IRF840 MOSFETs

    Untitled

    Abstract: No abstract text available
    Text: IRF840 Advanced Power MOSFET FEATURES - 500 V ^DS on = 0.85Q B ^D S S > a ♦ Lower Input Capacitance II ♦ Rugged Gate Oxide Technology 00 ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V


    OCR Scan     		PDF IRF840

    TO-204AE

    Abstract: No abstract text available
    Text: NATL N-Channel Power MOSFETs N-Channel Power MOSFETs Continued IRFP441 IRF442 IRF840 IRF841 IRF842 IRF843 2N6764 IRFP1S0 IRFP151 IRF152 2N6765 2N6766 IRF250 IRFP250 IRF251 - 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600


    OCR Scan     		PDF IRFP441 IRF442 IRF443 IRF840 IRF841 IRF842 IRF843 2N6763 2N6764 IRF150 TO-204AE