IRF9520 Search Results

Contextual Info: PD- 95412 IRF9520PbF • Lead-Free Document Number: 91074 06/15/04 www.vishay.com 1 IRF9520PbF Document Number: 91074 www.vishay.com 2 IRF9520PbF Document Number: 91074 www.vishay.com 3 IRF9520PbF Document Number: 91074 www.vishay.com 4 IRF9520PbF Document Number: 91074

Contextual Info: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

IRF9520PBF

Contextual Info: PD- 95412 IRF9520PbF • Lead-Free www.irf.com 1 06/15/04 IRF9520PbF 2 www.irf.com IRF9520PbF www.irf.com 3 IRF9520PbF 4 www.irf.com IRF9520PbF www.irf.com 5 IRF9520PbF 6 www.irf.com IRF9520PbF www.irf.com 7 IRF9520PbF TO-220AB Package Outline Dimensions are shown in millimeters inches

irf 418

Abstract: IRF530S
Contextual Info: PD-95987 IRF9520SPbF • Lead-Free www.irf.com 1 06/07/05 IRF9520SPbF 2 www.irf.com IRF9520SPbF www.irf.com 3 IRF9520SPbF 4 www.irf.com IRF9520SPbF www.irf.com 5 IRF9520SPbF 6 www.irf.com IRF9520SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

irf9520

Abstract: IRF9522 9521z irf9521
Contextual Info: P-CHANNEL POWER MOSFETS IRF9520/9521Z9522/9523 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRF530S

Abstract: IRL3103L
Contextual Info: PD- 95764 IRF9520NSPbF IF9520NLPbF • Lead-Free www.irf.com 1 04/26/05 IRF9520NS/LPbF 2 www.irf.com IRF9520NS/LPbF www.irf.com 3 IRF9520NS/LPbF 4 www.irf.com IRF9520NS/LPbF www.irf.com 5 IRF9520NS/LPbF 6 www.irf.com IRF9520NS/LPbF www.irf.com 7 IRF9520NS/LPbF

Contextual Info: PD - 95411 IRF9520NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.48Ω G ID = -6.8A S Description Fifth Generation HEXFETs from International Rectifier

IRF9520

Contextual Info: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

IRF530S

Contextual Info: PD-95987 IRF9520SPbF • Lead-Free Document Number: 91075 06/07/05 www.vishay.com 1 IRF9520SPbF Document Number: 91075 www.vishay.com 2 IRF9520SPbF Document Number: 91075 www.vishay.com 3 IRF9520SPbF Document Number: 91075 www.vishay.com 4 IRF9520SPbF Document Number: 91075

SiHF9520S

Abstract: SiHF9520S-E3 IRF9520S
Contextual Info: IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21

Contextual Info: IRF9520NS/L l l l l l l l Advanced Process Technology Surface Mount IRF9520S Low-profile through-hole (IRF9520L) 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated TO-263 TO-262 Description The D2Pak is a surface mount power package capable of

IRF9610

Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540

1RF9520

Abstract: diode S68a 68A diode IRF9520S UI5 321 IRF9520 ScansUX102 d68a SMD MARKING "68A"
Contextual Info: P D -9.319G International ire 1Rectifier IRF9520 HEXFET® Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements ^D S S -

Contextual Info: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

f9520

Abstract: GS 9521 irf9520 IRF9520 Samsung IRF9523 9521 ltsj
Contextual Info: P-CHANNEL POWER MOSFETS IRF9520/9521/9522/9523 FEATURES • • • • • • • Lower R ds <on Improved Inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended sale operating area Improved high temperature reliability

Contextual Info: IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S

Contextual Info: IRF9520S, SiHF9520S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single Available RoHS* COMPLIANT DESCRIPTION S

irf 425

Abstract: ICL8038CCPD HSMS-2820-BLK icl8038ccjd IRF 315 HSDL-1001-001 hsmp-3890 ICL232CPE HSMP 2820 ICM7211AMIPL
Contextual Info: Semiconductor Directory Page 1.34 1.58 1.54 0.87 2.09 IRF INT IRF IRF IRF 815 824 815 Ñ 816 IRF9410 IRF9510 IRF9510S IRF9520 IRF9520 IRF9520N IRF9530 1.28 0.80 1.47 0.74 0.62 1.04 1.23 IRF IRF IRF IRF INT IRF INT 816 815 816 815 Ñ 814 824 Ñ 824 Ñ 816 815

IRF9520L

Abstract: IRF9520S
Contextual Info: PD -91522A IRF9520NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF9520S l Low-profile through-hole (IRF9520L) l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -100V RDS(on) = 0.48Ω

IRF9520

Abstract: IRF9520 equivalent 10A 41ab IRF9520PBF SiHF9520
Contextual Info: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

IRF9520

Abstract: IRF9523 IRF9521 IRF9522 irf9520 p channel GS 9521
Contextual Info: Rugged Power M O SFETs IRF9520, IRF9521 IRF9522, IRF9523 File Number 2 2 8 1 Avalanche-Energy-Rated P-Channel Power M OSFETs -5 A and -6 A, -60 V and -100 V rDsiom = 0.60 Cl and 0.80 Q TERMINAL DIAGRAM o Features: • Single pulse avalanche energy rated m SOA is power-dissipation limited

AN609

Abstract: IRF9520S SiHF9520S
Contextual Info: IRF9520S_RC, SiHF9520S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRF9520, SiHF9520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: PD- 95412 IRF9520PbF • Lead-Free 1 IRF9520PbF 2 IRF9520PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)