IRFA Search Results

IRFAG40

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFAG50

Contextual Info: PD - 90582 IRFAG50 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG50 BVDSS 1000V RDS(on) 2.0Ω ID 5.6Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

inverter MOSFET 900V 3A

Abstract: IRFAF40
Contextual Info: PD - 90581 IRFAF40 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF40 BVDSS 900V RDS(on) 2.5Ω ID 4.3Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

irfae42

Abstract: JRFAE42
Contextual Info: he o I qassqsa oocnasq y | Data Sheet No. PD-9.579A INTERNATIONAL RECTIFIER T ^ T - fS ' INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED IRFAE40 IRFAE42 HEXFET TRANSISTORS N-CHANNEL 800 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package

Contextual Info: HE D I 4055452 G O G ^ a a | Data Sheet No. PD-9.513B INTERNATIONAL RECTIFIER _ INTERNATIONAL RECTIFIER I R T -39-23 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFAC30 IRFAC32

IRFAF50

Abstract: SHD239507
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 900 6.2 4 200 1.6 @ 4 0.34 IRFAF50

Contextual Info: PD - 90579 IRFAE40 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE40 BVDSS 800V RDS(on) 2.0Ω ID 4.8Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: N-CHANNEL POWER MOSFET IRFAG50 • Low RDS on Power MOSFET Transistor In A Hermetic Metal TO3 Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: IRFAC40, IRFAC42 HARRIS S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 • 6 .2 A and 5.4A , 60 0V Description • r D S O N = 1 These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFAC42 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)20 I(D) Max. (A)5.4 I(DM) Max. (A) Pulsed I(D)3.4 @Temp (øC)100 IDM Max (@25øC Amb)22 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ

IRFAE50

Abstract: SHD239506
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 800 7.1 4.5 200 1.2 @ 4.5 0.34 IRFAE50

TSMC 90nm sram

Abstract: tsmc 130nm metal process nmos transistor tsmc 130nm contact via design rule metal process applications of vlsi in antennas tsmc design rule front of fabrication process matched transistors 52NM
Contextual Info: Translating Yield Learning Into Manufacturable Designs Vijay Chowdhury, Irfan Rahim, Ada Yu and Girish Venkitachalam Altera Corp. San Jose, CA 95134 Introduction: Improving semiconductor yield is a multi-dimensional process that must include design, fabrication and test aspects. An

1RFAF40

Abstract: irfaf42 dts110
Contextual Info: HE D I 4Ö554S2 GQDci 57 G 4 | Data Sheet No. PD-9.581A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I« R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED IRFAF4Q IRFAF4S HEXFET TRANSISTORS N-CHANNEL Product Summary 900 Volt, 2.5 Ohm HEXFET TO-204AA TO-3 Hermetic Package

Contextual Info: PD - 90577 IRFAF50 900V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAF50 BVDSS 900V RDS(on) ID 1.6Ω 6.2Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFAG50

Abstract: LE17
Contextual Info: N-CHANNEL POWER MOSFET IRFAG50 • Low RDS on Power MOSFET Transistor In A Hermetic Metal TO3 Package • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

IRF 244 MOSFET

Abstract: FOR G-243 G-243 International Rectifier MOSFET 443 irfae52 LF 71A diode LF 71A
Contextual Info: h e D I qassMsa c m m a t a s | Data Sheet No. PD-9.574A INTERNATIONAL R E C T I F I E R T-39-13 IN T E R N A T IO N A L R E C T IF IE R I I O R REPETITIVE AVALANCHE AND dv/dt RATED IRFAE50 IRFAE52 HEXFET TRANSISTORS N -C H A N N E L 800 Volt, 1.2 Ohm HEXFET

Contextual Info: IRFAC42R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)20 I(D) Max. (A)5.4# I(DM) Max. (A) Pulsed I(D)3.4# @Temp (øC)100 IDM Max (@25øC Amb)22# @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55õ

mosfet 10a 800v

Abstract: IRFAE50 diode 71A
Contextual Info: PD - 90574 IRFAE50 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE50 BVDSS 800V RDS(on) 1.2Ω ID 7.1Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

mosfet 10a 800v

Abstract: IRFAE30
Contextual Info: PD - 90614 IRFAE30 800V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAE30 BVDSS 800V RDS(on) 3.2Ω ID 3.1Α The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFAG30

Contextual Info: PD -90622 IRFAG30 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG30 BVDSS 1000V RDS(on) 5.6Ω ID 2.3Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFAC30

Abstract: mosfet 600V 3.6A N-CHANNEL TO
Contextual Info: PD -90513 IRFAC30 600V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAC30 BVDSS 600V RDS(on) 2.2Ω ID 3.6Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

SHD218506B

Abstract: IRFAE50
Contextual Info: Part Number Search: MOSFETs Product Specifications MOSFETs, N Channel SM Type Number V BR DSS (Volts) ID (25°C) (Amps) ID (100°C) (Amps) PD (25°C) RDS(on) @ ID (Ohms@Amps) theta JC (°C/W) Similar Part Type Package Style 800 7.1 4.5 200 1.2 @ 4.5 0.6 IRFAE50

TEXAS PID CONTROLLER

Abstract: deadbeat control SPRA083 deadbeat PID code implementation digital signal processing TMS320 Family PID control pid controller TMS320 TMS320C15
Contextual Info: Implementation of PID and Deadbeat Controllers with the TMS320 Family APPLICATION REPORT: SPRA083 Irfan Ahmed Digital Signal Processor Products Semiconductor Group Texas Instruments Digital Signal Processing Solutions IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any