IRFBC30 150 E Search Results

IRFBC30

Abstract: IRFBC30 150 E 4315A
Contextual Info: IRFBC30 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRFBC30 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 2.2 Ω 4.3 A TYPICAL RDS(on) = 2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED

IRFBC32

Contextual Info: HE D I 4Û5S4SE □□Oôfc.42 □ | Data Sheet No. PD-9.482B INTERNATIONAL RECTIFIER _ IN T E R N A T IO N A L R E C T IF IE R [ l O R I REPETITIVE AVALANCHE AND dv/dt RATED* IRFBC30 IRFBC32 HEXFET TRANSISTORS N -C H A N N E L 600 Volt, 2.2 Ohm HEXFET

IRFBC30

Contextual Info: IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESH ΙΙ MOSFET TYPE IRFBC30 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 2.2 Ω 3.6 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

IRFBC30

Abstract: SWITCHING WELDING SCHEMATIC BY MOSFET
Contextual Info: IRFBC30  N - CHANNEL 600V - 1.8 Ω - 3.6 A - TO-220 PowerMESH MOSFET TYPE IRFBC30 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 2.2 Ω 3.6 A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

IRFBC30

Abstract: IRFBC30I 442 rectifier
Contextual Info: International HEl Rectifier I IRFBC30 I NTERNATIONAL HEXFET Power MOSFET • • • • • PD-9.482C 4Ô S 54 S 2 G 0 m T 5 b ÔDfi H I N R RECTIFIER bSE D Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

diode 251 36A

Abstract: IRFBC30 IRFBC30F IOR 438 IRFBC30 150 E 482C a40v
Contextual Info: PD-9.482C International irêRl Rectifier IRFBC30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 600V R DS on - 2 -2 ß lD = 3.6A Description T h ird G e n e ra tio n H E X F E T s fro m Inte rn a tio n a l R ectifie r p rovid e th e d e sig n e r

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFBC30

Abstract: irfbc30 vishay
Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFBC30

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

22AB

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IR2106 APPLICATION NOTE

Abstract: IR2106S DT97-3 IRFBC20 IR21064S CC15V ir2106s datasheet IRFBC30 IRFPE50 IR2106
Contextual Info: Data Sheet No. PD60162-U IR2106 4 (S) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Product Summary Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V (IR2106(4)

S2186

Abstract: SCOP 200-002 IRs2186 application note
Contextual Info: IRS2186 4 (S)PBF High and Low Side Driver Features •            Product Summary Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 V to 20 V

IR2108

Abstract: IR21084 mosfet te 2304 IR21084S IR2108S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PD60161-R
Contextual Info: Data Sheet No. PD60161-R IR2108 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Packages Tolerant to negative transient voltage dV/dt immune 14-Lead SOIC 8-Lead SOIC • Gate drive supply range from 10 to 20V

Contextual Info: Data Sheet No. PD60173 rev.F IR2183 4 (S) & (PbF) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • Packages Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

IR2109 application note

Abstract: PD60163-T halfbridge design ir2109 IR2109 IR2109 application IRFBC20 70V100 IRFBC30 IR21094 IR2109S
Contextual Info: Data Sheet No. PD60163-T IR2109 4 (S) HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • • • • Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

Contextual Info: Dato Sheet No. PD-6.086 International I R Rectifier IR 2 1 1 0 E 4 HIGH AND LOW SIDE DRIVER Product Summary Features • Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage VOFFSET 400V max.

IRS21814

Abstract: IRFBC30 IRFBC20 IRFBC40 IRFPE50 IRS2181 IRS2181S IRS2181STRPBF IRS21814SPBF OC140
Contextual Info: Data Sheet No. PD60262 IRS2181/IRS21814 S PbF HIGH AND LOW SIDE DRIVER Features • • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20 V

SiHFBC30L

Abstract: irfbc30spbf IRFBC30 IRFBC30L IRFBC30S SiHFBC30L-E3 SiHFBC30S SiHFBC30S-E3
Contextual Info: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating

irs2183s application note

Abstract: IRFBC30 IRS21834 IR21834 IRFBC20 IRS2183 IRS21834S
Contextual Info: Data Sheet No. PD60265 IRS2183/IRS21834 S PbF HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt Packages 8-Lead PDIP IRS2183 immune • Gate drive supply range from 10 V to 20 V

IRFBC30

Abstract: OC140 IRFBC40 IRFPE50 IRS2181 IRS21814 IRS2181S IRFBC20
Contextual Info: Data Sheet No. PD60262 IRS2181/IRS21814 S PbF HIGH AND LOW SIDE DRIVER Packages Features • • • • • • • • • • Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune

IRS21064

Abstract: IRS2106 IRFBC30 IRFBC20 IRFBC40 IRFPE50
Contextual Info: PRELIMINARY Data Sheet No. PD60246 revB IRS2106/IRS21064 S PbF HIGH AND LOW SIDE DRIVER Features Packages • Floating channel designed for bootstrap operation • Fully operational to +600 V 8-Lead SOIC • Tolerant to negative transient voltage, dV/dt immune

Contextual Info: Data Sheet No. PD60271 IRS2186/IRS21864 S PbF HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt Packages immune • Gate drive supply range from 10 V to 20 V