IRFBE30 Search Results
IRFBE30 Price and Stock
Vishay Siliconix IRFBE30PBF-BE3MOSFET N-CH 800V 4.1A TO220AB |
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IRFBE30PBF-BE3 | Tube | 2,642 | 1 |
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IRFBE30PBF-BE3 | 650 | 1 |
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Vishay Siliconix IRFBE30PBFMOSFET N-CH 800V 4.1A TO220AB |
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IRFBE30PBF | Tube | 1,359 | 1 |
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IRFBE30PBF | Bulk | 1,000 |
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IRFBE30PBF | 16,600 | 1 |
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Vishay Siliconix IRFBE30LPBFMOSFET N-CH 800V 4.1A I2PAK |
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IRFBE30LPBF | Tube | 968 | 1 |
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Vishay Siliconix IRFBE30STRLPBFMOSFET N-CH 800V 4.1A D2PAK |
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IRFBE30STRLPBF | Digi-Reel | 700 | 1 |
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IRFBE30STRLPBF | 575 |
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Vishay Siliconix IRFBE30MOSFET N-CH 800V 4.1A TO220AB |
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IRFBE30 | Tube |
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IRFBE30 Datasheets (25)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 4.1A TO-220AB | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30 | International Rectifier | TO-220 HEXFET Power MOSFET | Scan | 41.94KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30 | International Rectifier | TO-220 Plastic Package HEXFETs | Scan | 100.13KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30 | International Rectifier | HEXFET Power MOSFET | Scan | 171.09KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30 | International Rectifier | Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) | Scan | 171.08KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30 | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 800V, 4.1A, Pkg Style TO-220AB | Scan | 50.01KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 106.71KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 39.09KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30L | International Rectifier | 800V Single N-Channel HEXFET Power MOSFET in a TO-262 package | Original | 480.77KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30L | International Rectifier | 800V Single N-Channel HEXFET Power MOSFET in a TO-262 package | Original | 598.4KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30L | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 4.1A TO-262 | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30LPBF | International Rectifier | HEXFET Power MOSFET | Original | 598.39KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30LPBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 4.1A TO-262 | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRFBE30PBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 4.1A TO-220AB | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30PBF | International Rectifier | 800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | Scan | 171.09KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30PBF-BE3 | Vishay Siliconix | MOSFET N-CH 800V 4.1A TO220AB | Original | 1.63MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30S | International Rectifier | 800V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | Original | 480.77KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30S | International Rectifier | 800V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | Original | 598.4KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30S | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 4.1A D2PAK | Original | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFBE30 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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irfbe30Contextual Info: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements |
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IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30 | |
irfbe30Contextual Info: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements |
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IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30 | |
P-Channel MOSFET 800v
Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
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IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L Dissi957) EIA-418. P-Channel MOSFET 800v 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode | |
94945Contextual Info: PD - 94945 IRFBE30PbF • Lead-Free Document Number: 91118 1/15/04 www.vishay.com 1 IRFBE30PbF Document Number: 91118 www.vishay.com 2 IRFBE30PbF Document Number: 91118 www.vishay.com 3 IRFBE30PbF Document Number: 91118 www.vishay.com 4 IRFBE30PbF Document Number: 91118 |
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IRFBE30PbF O-220AB 12-Mar-07 94945 | |
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Contextual Info: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International |
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IRFBE30S IRFBE30L O-262 08-Mar-07 | |
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Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBE30 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: |
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O-220AB IRFBE30 | |
IRFBE30
Abstract: SiHFBE30 SiHFBE30-E3 irfbe30pbf
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IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBE30 SiHFBE30-E3 irfbe30pbf | |
s8143
Abstract: IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S SiHFBE30S-E3
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IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-263) O-262) 18-Jul-08 s8143 IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S-E3 | |
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Contextual Info: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling |
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IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 11-Mar-11 | |
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Contextual Info: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling |
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IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU. | |
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Contextual Info: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling |
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IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 18-Jul-08 | |
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Contextual Info: IRFBE30 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V) I(D) Max. (A)4.1 I(DM) Max. (A) Pulsed I(D)2.6 @Temp (øC)100# IDM Max (@25øC Amb)16 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ |
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IRFBE30 | |
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Contextual Info: PD - 94945 IRFBE30PbF • Lead-Free Document Number: 91118 1/15/04 www.vishay.com 1 IRFBE30PbF Document Number: 91118 www.vishay.com 2 IRFBE30PbF Document Number: 91118 www.vishay.com 3 IRFBE30PbF Document Number: 91118 www.vishay.com 4 IRFBE30PbF Document Number: 91118 |
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IRFBE30PbF O-220AB 08-Mar-07 | |
AN609
Abstract: IRFBE30L IRFBE30S SiHFBE30S
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IRFBE30S SiHFBE30S IRFBE30L SiHFBE30L AN609, 20-Apr-10 AN609 | |
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IRFBE30Contextual Info: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements Qgd (nC) |
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IRFBE30, SiHFBE30 O-220 O-220 12-Mar-07 IRFBE30 | |
P-Channel MOSFET 800v
Abstract: IRFBE30L IRFBE30S IRL3103L
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IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L 12-Mar-07 P-Channel MOSFET 800v IRFBE30L IRFBE30S IRL3103L | |
800v irf
Abstract: IRFBE30L IRFBE30S 95507 irf 480
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IRFBE30SPbF IRFBE30LPbF IRFBE30S O-262 IRFBE30L EIA-418. 800v irf IRFBE30L IRFBE30S 95507 irf 480 | |
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Contextual Info: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements |
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IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements |
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IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements |
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IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: International k?r Rectifier PD-9.613A IRFBE30 HHXFET Power MOSFET • • • • • IINR 4Ö554S2 0014=174 623 INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements |
OCR Scan |
IRFBE30 554S2 | |
irfbe30Contextual Info: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements |
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IRFBE30, SiHFBE30 2002/95/EC O-220AB 11-Mar-11 irfbe30 | |
IRFBE30L
Abstract: IRFBE30S
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IRFBE30S IRFBE30L O-262 12-Mar-07 IRFBE30L IRFBE30S | |
irfbe30Contextual Info: PD-9.613A International I S Rectifier IRFBE30 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 800V R DS on - 3 -0 ß lD = 4.1 A Description Third Generation HEXFETs from International Rectifier provide the designer |
OCR Scan |
IRFBE30 O-220 T0-220 irfbe30 | |