IRFL014 FA Search Results

AN-994

Abstract: IRFL014 RG251
Contextual Info: PD-9.860 International S Rectifier IRFL014 HEXFET Power MOSFET • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 60 V R DS on - 0.20Q lD = 2.7A D escription

irfl014

Abstract: irfl014 fa
Contextual Info: PD 9.860A International SS Rectifier IRFL014 HEXFET Power MOSFET • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Ease of Paralleling Simple Drive Requirements Vdss - 60V ^DS on = 0 -2 0 Î2 lD = 2 .7 A

IRFL014

Abstract: siliconix sot-223 marking SiHFL014 SiHFL014-E3
Contextual Info: IRFL014, SiHFL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D D RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the

IRFL014

Abstract: SiHFL014 SiHFL014-E3 siliconix sot-223 marking
Contextual Info: IRFL014, SiHFL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

Contextual Info: IRFL014, SiHFL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel

IRFL014

Abstract: irfl014trpbf
Contextual Info: IRFL014, SiHFL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel

Contextual Info: IRFL014, SiHFL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D DESCRIPTION Third generation power MOSFETs from Vishay provide the

IRFL014

Contextual Info: IRFL014, SiHFL014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D G G D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

IRFL014

Abstract: SiHFL014 SiHFL014-E3 SiHFL014-GE3 MARKING ls
Contextual Info: IRFL014, SiHFL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel

Contextual Info: IRFL014, SiHFL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

s8210

Abstract: irfl014trpbf 1257 irfl014 i*l014 PCB FR-4
Contextual Info: IRFL014, SiHFL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel

IRFL014

Contextual Info: IRFL014, SiHFL014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel

Contextual Info: PD 9.860A International U S R ectifier IRFL014 HEXFET Pow er M O S F E T • S u rfa c e M o u n t • A v a ila b le in T a p e & R e el • VDSs = 60V D y n a m ic d v/d t R ating • F a s t S w itchin g • E a s e of P arallelin g ^ D S o n = 0 - 2 0 Q

FL014

Abstract: FL014 Example International Rectifier TO-261AA IRFL014 international rectifier code sot223 YEAR DATE CODE IRF1010 IRFS1Z0 314 sot-89 INTERNATIONAL RECTIFIER
Contextual Info: SOT-89 EXAMPLE: THIS IS AN IRFS1Z0 THE TWO CHARACTERS ON THIS SIDE OF THE DEVICE SPECIFY THE PART NUMBER. BOTH SETS OF CHARACTERS FACING OUTWARD INDICATE THAT THE SOT-89 IS A HEXFET. THE TWO CHARACTERS ON THIS SIDE OF THE DEVICE SPECIFY THE DATE CODE. SOT-223 TO-261AA

FL014

Abstract: FL014 Example AN-994 IRFL9014 IRFL4310
Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier

FL014

Abstract: FL014 Example FL014 equivalent EIA-541 IRFL014 marking code 4X IRFL4310
Contextual Info: IRFL4310 Package Outline HEXFET SOT-223 TO-261AA Outline E LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN B1 3 - SOURCE 0.10 (.004) M C B M 4 - DRAIN D -B- 3 3 H 0.20 (.008) M C A M -A1 2 A L1 0.10 (.004) M C B M MAX MIN MAX 1.55 1.80 .061 .071 B 0.65 0.85 .026 .033

FL014

Abstract: IRFL214PBF IRF 100A 314P AN-994 EIA-541 IRFL014 PD-95318 International Rectifier TO-261AA
Contextual Info: PD-95318 IRFL214PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description

95320

Abstract: ST 95320 FL014 IRF 100A AN-994
Contextual Info: PD - 95320 IRFL9110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A S Description Third Generation HEXFETs from International Rectifier

smd fl014

Abstract: IRFL4105PBF diode SMD MARKING CODE 607 314P EIA-541 FL014 IRFL014 SMD MARKING 541 DIODE
Contextual Info: PD- 95319 IRFL4105PbF HEXFET Power MOSFET Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.045Ω G ID = 3.7A S Description Fifth Generation HEXFETs from International Rectifier

smd fl014

Abstract: smd CODE 95 SOT-223 FL014 314P EIA-541 IRFL014 om SMD CODE MARKING
Contextual Info: PD- 95352 IRFL014NPbF l l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.16Ω G ID = 1.9A S Description Fifth Generation HEXFET® MOSFETs from International

FL014

Abstract: AN-994 irfl110pbf IRFL014 314P EIA-541 519 SOT-223
Contextual Info: PD - 95317 IRFL110PbF HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 100V RDS on = 0.54Ω G ID = 1.5A S Description

IRFL9014PBF

Abstract: FL014 IRF 100A AN-994 irf* p-channel sot-223 95153 TO-261AA DSS 1630
Contextual Info: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A

smd fl014

Abstract: FL014 FL014 Example transistor SMD FL014 EIA-541 IRFL014 IRFL4310 838 infra red i*l014 MARKING 93 SOT-223
Contextual Info: PD - 91368B IRFL4310 HEXFET Power MOSFET D l l l l l l Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance VDSS = 100V RDS on = 0.20W G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 91368B IRFL4310 HEXFET Power MOSFET D l l l l l l Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance VDSS = 100V RDS on = 0.20W G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier