DIODE SMD 55a
Abstract: ir mosfet smd package smd 2f IRFN054
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1543A HEXFET POWER MOSFET IRFN054 N-CHANNEL Ω HEXFET 60 Volt, 0.020Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
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IRFN054
DIODE SMD 55a
ir mosfet smd package
smd 2f
IRFN054
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IRFN054SMD
Abstract: No abstract text available
Text: IRFN054SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN054SMD
00A/ms
300ms,
IRFN054SMD
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IRFN054
Abstract: No abstract text available
Text: PD - 91543B POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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91543B
IRFN054
IRFN054
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IRFN054
Abstract: No abstract text available
Text: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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PD-91543C
IRFN054
IRFN054
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SHD219501
Abstract: IRFN054
Text: SENSITRON SEMICONDUCTOR SHD219501 TECHNICAL DATA DATA SHEET 778, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 60 Volt, 0.020 Ohm, 55A MOSFET Isolated Hermetic Ceramic Package Fast Switching Low RDS on Equivalent to IRFN054 MAXIMUM RATINGS
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SHD219501
IRFN054
SHD219501
IRFN054
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD219501 TECHNICAL DATA DATA SHEET 778, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 60 Volt, 0.020 Ohm, 55A MOSFET Isolated Hermetic Ceramic Package Fast Switching Low RDS on Equivalent to IRFN054 MAXIMUM RATINGS
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SHD219501
IRFN054
SHD219501
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4600 mosfet
Abstract: MOSFET 20V 45A
Text: SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 60V 45A Ω 0.027Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF
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IRFN054
220SM
300ms,
4600 mosfet
MOSFET 20V 45A
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Untitled
Abstract: No abstract text available
Text: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The
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PD-91543C
IRFN054
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Untitled
Abstract: No abstract text available
Text: IRFN054SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN054SMD
00A/ms
300ms,
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IRFN054
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1543A HEXFET POWER MOSFET IRFN054 N-CHANNEL Ω HEXFET 60 Volt, 0.020Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.
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IRFN054
IRFN054
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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smd diode S4 64a
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1543A IO R Rectifier HEXFET POWER MOSFET IRFN054 N -C H A N N E L 60 Volt, 0.0200 HEXFET H E X F E T te ch n o lo g y is th e ke y to In te rn a tio n a l R ectifier’s advanced line of power MOSFET transis tors. The efficient geom etry achieves very low onstate resistance combined with high transconductance.
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IRFN054
5S452
GD24flSfl
smd diode S4 64a
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Untitled
Abstract: No abstract text available
Text: mi iFFi Nil SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 0.25 3.0 V DSS 60V I D(cont) 45A 0.027a ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE o o> L I 1'_ • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.
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IRFN054
O-220SM
00A/p
300ms,
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MNT-LB32N16-C4
Abstract: T0254 sml1001r1avr SM5104
Text: SEMELABpIc SELECTOR GUIDE MOS PRODUCTS VDSS Type_No Technology Polarity Package IRFF9210 IRFF9220 IRFF9230 IRFM044 IRFM054 IRFM140 IRFM150 IRFM240 IRFM250 IRFM340 IRFM350 IRFM360 IRFM440 IRFM460 IRFM9140 IRFM9240 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250
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ei998
IRFF9210
IRFF9220
IRFF9230
IRFM044
IRFM054
IRFM140
IRFM150
IRFM240
IRFM250
MNT-LB32N16-C4
T0254
sml1001r1avr
SM5104
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IRFG014
Abstract: smd 9410 IRFH450 s 9413 9410 N-channel
Text: TOR HIGH-REL HEXFETs INTERNATIONAL. RECTIFIER - INTERNA TIO NAL RECTIFIER SbE D ' SSSHSa 00105b? T • TO-61 Isolated Package T - 3°l - 03 N-CHANNEL Types Vd s Iq cant Rd S(ON (max) Tq = 25°C |q m pulsed P0 max Case Style Bulletin V a A A W IRFH150
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00105b?
IRFH150
1RFH250
IRFH350
IRFH450
T0-210AC
IRFH9140
M0036AB
IRFG014
IRFG110
smd 9410
s 9413
9410 N-channel
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Diode SMD ED 9C
Abstract: FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
Text: IQR IRFN Series Devices IRFN Series Data Sheet alph abetical order. W h e re the inform ation is d evice specific, w e h ave assig n ed a n um eric c h a ra cte r for the graph type and an alph a c h a ra c te r to a given device. S e e T a b le A b elo w . W h e re graphs are
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I-445
Diode SMD ED 9C
FN240
p-channel 250V 30A power mosfet
P-CHANNEL 400V 15A
i428
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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IRFJ140
Abstract: IRLF110
Text: Government/ Space Products International [1»1Rectifier Power MOSFETS High Reliability Logic Level — N-Channel V d s Drain Source Voltage Vblts Part Number IRLF110 IRLF120 IRLF130 100 RDS(on) On-State Resistance (Ohms) 0.60 0.35 0.20 Iq Continuous Drain Current
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IRLF110
IRLF120
IRLF130
O-205AF
JO-39
IRFE130
IRFN054
IRFN150
IRFN250
IRFN350
IRFJ140
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n10 smd
Abstract: No abstract text available
Text: International Government and Space HEXFET Power MOSFETs [ ÏQ R R e c t ï f ie r Hermetic Package N & P Channel Part b v d ss RDS on Number (V) (Ohms) lp @ Tc = 100"C RthJC Max. Pd @ TC = 25°C Outline «1 (A) (K/W) (W) Number (1) IRFE024 60 0.15 6.7 4.2
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IRFE024
IRFE110
IRFE120
IRFE130
IRFE210
IRFE220
IRFE230
IRFE310
IRFE320
IRFE330
n10 smd
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Untitled
Abstract: No abstract text available
Text: _ I n t e r n a t i o n a l R e c t if ie r Government and Space Products Part Number P bvdss Vohj) RDS(on) (Ohmi) 10« To*25* ID« Tc*100° (Amp*) (Amps) Total Dos* Rating Radi (Si) PD« To2P (Watts) Fax-onDrniand Number
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IRHM7250
IRHM3250
IRHM4250
IRHM8250
JANSR2N7269
JANSF2N7269
JANSG2N7269
JANSH2N7269
IRHM7260
IRHM8260
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IRF1644
Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Text: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.
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100HF20-100HF160.
100JB05L-100JB12L.
10CTF10-10CTF40.
10CTQ140
10D05-10010.
10DF1100F8
10JF1-10JF4.
10JQ030-10JQ100.
1OJTF10-10JTF40
10MQ040-10MQ090.
IRF1644
12CTQ030-12CT0045
10JQ030-10JQ100
IRL0024
31D003-31D010
IRKT210-16
IRF1401
6cw 78
IRF140-143
IRFT003
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