IRFN054 Search Results

smd diode S4 64a

Contextual Info: Provisional Data Sheet No. PD-9.1543A IO R Rectifier HEXFET POWER MOSFET IRFN054 N -C H A N N E L 60 Volt, 0.0200 HEXFET H E X F E T te ch n o lo g y is th e ke y to In te rn a tio n a l R ectifier’s advanced line of power MOSFET transis­ tors. The efficient geom etry achieves very low onstate resistance combined with high transconductance.

DIODE SMD 55a

Abstract: ir mosfet smd package smd 2f IRFN054
Contextual Info: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1543A HEXFET POWER MOSFET IRFN054 N-CHANNEL Ω HEXFET 60 Volt, 0.020Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.

IRFN054SMD

Contextual Info: IRFN054SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6

IRFN054

Contextual Info: PD - 91543B POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

IRFN054

Contextual Info: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

SHD219501

Abstract: IRFN054
Contextual Info: SENSITRON SEMICONDUCTOR SHD219501 TECHNICAL DATA DATA SHEET 778, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 60 Volt, 0.020 Ohm, 55A MOSFET œ Isolated Hermetic Ceramic Package œ Fast Switching œ Low RDS on œ Equivalent to IRFN054 MAXIMUM RATINGS

Contextual Info: SENSITRON SEMICONDUCTOR SHD219501 TECHNICAL DATA DATA SHEET 778, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 60 Volt, 0.020 Ohm, 55A MOSFET œ Isolated Hermetic Ceramic Package œ Fast Switching œ Low RDS on œ Equivalent to IRFN054 MAXIMUM RATINGS

Contextual Info: Mil W llll : SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET VDSS 11.5 2.0 3.5 60V 45A 0.027Q 0.25 3.5 I D(cont) 3.0 ^D S (on) iC FEATURES -1- • HERMETICALLY SEALED SURFACE MOUNT PACKAGE r r • SMALL FOOTPRINT - EFFICIENT USE OF

Contextual Info: mi iFFi Nil SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 0.25 3.0 V DSS 60V I D(cont) 45A 0.027a ^DS(on) FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE o o> L I 1'_ • SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE.

4600 mosfet

Abstract: MOSFET 20V 45A
Contextual Info: SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 60V 45A Ω 0.027Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF

Contextual Info: PD-91543C POWER MOSFET SURFACE MOUNT SMD-1 IRFN054 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 Ω 55A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

Contextual Info: IRFN054SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6

MNT-LB32N16-C4

Abstract: T0254 sml1001r1avr SM5104
Contextual Info: SEMELABpIc SELECTOR GUIDE MOS PRODUCTS VDSS Type_No Technology Polarity Package IRFF9210 IRFF9220 IRFF9230 IRFM044 IRFM054 IRFM140 IRFM150 IRFM240 IRFM250 IRFM340 IRFM350 IRFM360 IRFM440 IRFM460 IRFM9140 IRFM9240 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250

IRFN054

Contextual Info: Provisional Data Sheet No. PD-9.1543A HEXFET POWER MOSFET IRFN054 N-CHANNEL Ω HEXFET 60 Volt, 0.020Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.

IRFG014

Abstract: smd 9410 IRFH450 s 9413 9410 N-channel
Contextual Info: TOR HIGH-REL HEXFETs INTERNATIONAL. RECTIFIER - INTERNA TIO NAL RECTIFIER SbE D ' SSSHSa 00105b? T • TO-61 Isolated Package T - 3°l - 03 N-CHANNEL Types Vd s Iq cant Rd S(ON (max) Tq = 25°C |q m pulsed P0 max Case Style Bulletin V a A A W IRFH150

IRFM9034

Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Contextual Info: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number

Diode SMD ED 9C

Abstract: FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
Contextual Info: IQR IRFN Series Devices IRFN Series Data Sheet alph abetical order. W h e re the inform ation is d evice specific, w e h ave assig n ed a n um eric c h a ra cte r for the graph type and an alph a c h a ra c te r to a given device. S e e T a b le A b elo w . W h e re graphs are

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

10RIA10

Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Contextual Info: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

IRFJ140

Abstract: IRLF110
Contextual Info: Government/ Space Products International [1»1Rectifier Power MOSFETS High Reliability Logic Level — N-Channel V d s Drain Source Voltage Vblts Part Number IRLF110 IRLF120 IRLF130 100 RDS(on) On-State Resistance (Ohms) 0.60 0.35 0.20 Iq Continuous Drain Current

n10 smd

Contextual Info: International Government and Space HEXFET Power MOSFETs [ ÏQ R R e c t ï f ie r Hermetic Package N & P Channel Part b v d ss RDS on Number (V) (Ohms) lp @ Tc = 100"C RthJC Max. Pd @ TC = 25°C Outline «1 (A) (K/W) (W) Number (1) IRFE024 60 0.15 6.7 4.2

Contextual Info: _ I n t e r n a t i o n a l R e c t if ie r Government and Space Products Part Number P bvdss Vohj) RDS(on) (Ohmi) 10« To*25* ID« Tc*100° (Amp*) (Amps) Total Dos* Rating Radi (Si) PD« To2P (Watts) Fax-onDrniand Number

IRF1644

Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.