Untitled
Abstract: No abstract text available
Text: SEME IRFN250 LAB MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 11.5 1.5 VDSS ID(cont) RDS(on) 0.25 3.5 3.5 1 3 3.0 200V 14A Ω 0.100Ω FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 4.6 2.0 • SMALL FOOTPRINT – EFFICIENT USE OF
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IRFN250
220SM
300ms,
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TO-276
Abstract: IRF250SMD IRFN250 TO276AB
Text: IRFN250 2N7225U1 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRFN250
2N7225U1
300ms,
TO-276
IRF250SMD
IRFN250
TO276AB
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Untitled
Abstract: No abstract text available
Text: IRFN250SMD 2N7225U1 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 2 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 200V 27.4A Ω 0.100Ω FEATURES 1 6 .0 2 (0 .6 3 1 )
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IRFN250SMD
2N7225U1
300ms,
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IRFN250SMD
Abstract: No abstract text available
Text: IRFN250SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN250SMD
00A/ms
300ms,
IRFN250SMD
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IRFN250
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1549 HEXFET POWER MOSFET IRFN250 N-CHANNEL Ω HEXFET 200 Volt, 0.100Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN250
IRFN250
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IRFN250
Abstract: JANTX2N7225U JANTXV2N7225U power mosfet audio 160V
Text: PD - 91549C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN250 JANTX2N7225U JANTXV2N7225U REF:MIL-PRF-19500/592 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN250 0.100 Ω 27.4A HEXFET® MOSFET technology is the key to International
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91549C
IRFN250
JANTX2N7225U
JANTXV2N7225U
MIL-PRF-19500/592
IRFN250
JANTX2N7225U
JANTXV2N7225U
power mosfet audio 160V
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Untitled
Abstract: No abstract text available
Text: IRFN250SMD MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6
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IRFN250SMD
00A/ms
300ms,
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IRFN250
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1549 HEXFET POWER MOSFET IRFN250 N-CHANNEL Ω HEXFET 200 Volt, 0.100Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance.
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IRFN250
IRFN250
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Untitled
Abstract: No abstract text available
Text: IRFN250 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D)14 @Temp (øC)100# IDM Max (@25øC Amb)88 @Pulse Width (s) (Condition)300m Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-55
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IRFN250
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Untitled
Abstract: No abstract text available
Text: IRFN250 2N7225U1 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 )
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IRFN250
2N7225U1
300ms,
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2N7225U
Abstract: SMD1P IRFN250 JANTX2N7225U JANTXV2N7225U mosfet ir 250 n 2n7225
Text: PD-91549B IRFN250 JANTX2N7225U HEXFET POWER MOSFET JANTXV2N7225U [REF:MIL-PRF-19500/592] N - CHANNEL Ω MOSFET 200 Volt, 0.100Ω HEXFET® power MOSFET technology is the key to InternationalRectifier’s advanced line of power MOSFET transistors. The efficient geometry
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PD-91549B
IRFN250
JANTX2N7225U
JANTXV2N7225U
MIL-PRF-19500/592]
2N7225U
SMD1P
IRFN250
JANTX2N7225U
JANTXV2N7225U
mosfet ir 250 n
2n7225
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Untitled
Abstract: No abstract text available
Text: PD - 91549C POWER MOSFET SURFACE MOUNT SMD-1 Product Summary IRFN250 JANTX2N7225U JANTXV2N7225U REF:MIL-PRF-19500/592 200V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFN250 0.100 Ω 27.4A HEXFET® MOSFET technology is the key to International
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91549C
IRFN250
JANTX2N7225U
JANTXV2N7225U
MIL-PRF-19500/592
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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Untitled
Abstract: No abstract text available
Text: Int0 rnQt iODQI provisional Data Sheet No. PD-9.1549 IO R Rectifier HEXFET POWER MOSFET IRFN250 N -C H A N N E L 200 Volt, 0.1000 HEXFET P ro d u c t S um m an 1 HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
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Untitled
Abstract: No abstract text available
Text: In te r n a tio n a l 549 provisional Data Sheet No. PD-9.1 IGR R ectifier HEXFET POWER MOSFET IRFN250 N -C H A N N E L Product Summary 200 Volt, 0.100ft HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
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IRFN250
100ft
SS452
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Untitled
Abstract: No abstract text available
Text: im m = nil SEME IRFN250 LAB MECHANICAL DATA Dimensions in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 3.5 200V V Dss 0.25 14A 0.1 OOO ^D(cont) 3.0 ^DS(on) i5 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT - EFFICIENT USE OF
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IRFN250
220SM
00A/M-S
300ms,
A1331B7
000151b
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Untitled
Abstract: No abstract text available
Text: M il W llll : SEME IRFN250 LAB MECHANICAL DATA D im e nsio ns in mm inches N-CHANNEL POWER MOSFET 11.5 2.0 3.5 V DSS 0.25 3.5 200V 14A I D(cont) 3.0 0.100Q ^DS(on) -1-iC FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE r r • SMALL FOOTPRINT - EFFICIENT USE OF
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IRFN250
O-220SM
300ms,
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MNT-LB32N16-C4
Abstract: T0254 sml1001r1avr SM5104
Text: SEMELABpIc SELECTOR GUIDE MOS PRODUCTS VDSS Type_No Technology Polarity Package IRFF9210 IRFF9220 IRFF9230 IRFM044 IRFM054 IRFM140 IRFM150 IRFM240 IRFM250 IRFM340 IRFM350 IRFM360 IRFM440 IRFM460 IRFM9140 IRFM9240 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250
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ei998
IRFF9210
IRFF9220
IRFF9230
IRFM044
IRFM054
IRFM140
IRFM150
IRFM240
IRFM250
MNT-LB32N16-C4
T0254
sml1001r1avr
SM5104
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IRFG014
Abstract: smd 9410 IRFH450 s 9413 9410 N-channel
Text: TOR HIGH-REL HEXFETs INTERNATIONAL. RECTIFIER - INTERNA TIO NAL RECTIFIER SbE D ' SSSHSa 00105b? T • TO-61 Isolated Package T - 3°l - 03 N-CHANNEL Types Vd s Iq cant Rd S(ON (max) Tq = 25°C |q m pulsed P0 max Case Style Bulletin V a A A W IRFH150
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00105b?
IRFH150
1RFH250
IRFH350
IRFH450
T0-210AC
IRFH9140
M0036AB
IRFG014
IRFG110
smd 9410
s 9413
9410 N-channel
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IRF5402
Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
Text: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M
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BZX55C5V6CSM
T0220SM
2N2222CSM
2N2907CSM
BCW33CSM
BZX55C7V5CSM
2N2369ACSM
2N3209CSM
3250C
BCY59CSM
IRF5402
IRFN540
IRFN630
IRFN530
IRFN640
8YV32-5
W06C
2205-M
IRFN733
IRFn342
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Diode SMD ED 9C
Abstract: FN240 p-channel 250V 30A power mosfet P-CHANNEL 400V 15A i428
Text: IQR IRFN Series Devices IRFN Series Data Sheet alph abetical order. W h e re the inform ation is d evice specific, w e h ave assig n ed a n um eric c h a ra cte r for the graph type and an alph a c h a ra c te r to a given device. S e e T a b le A b elo w . W h e re graphs are
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I-445
Diode SMD ED 9C
FN240
p-channel 250V 30A power mosfet
P-CHANNEL 400V 15A
i428
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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