IRFR CROSS Search Results
IRFR CROSS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TS5USBC400YFPT |
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Dual 2:1 USB 2.0 Mux/DeMux or Single Ended Cross Switch with 16-V OVP 12-DSBGA 0 to 70 |
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| TS5USBC410IYFFR |
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Dual 2:1 USB 2.0 Mux/DeMux or Single Ended Cross Switch With 20-V/24-V OVP 12-DSBGA -40 to 85 |
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| UCC27282DRCR |
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120V half-bridge driver with cross conduction protection and low switching losses 10-VSON -40 to 125 |
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| TS5USBC402IYFPR |
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Dual 2:1 USB 2.0 Mux/DeMux or Single Ended Cross Switch with 20-V OVP 12-DSBGA -40 to 85 |
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| TS5USBC410IYFFT |
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Dual 2:1 USB 2.0 Mux/DeMux or Single Ended Cross Switch With 20-V/24-V OVP 12-DSBGA -40 to 85 |
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IRFR CROSS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V |
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IRFR/U120A | |
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Contextual Info: IRFR/U220A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V |
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IRFR/U220A | |
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Contextual Info: IRFR/U120A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V |
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IRFR/U120A | |
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Contextual Info: IRFR/U230A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V |
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IRFR/U230A | |
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Contextual Info: IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V |
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IRFR/U110A | |
MOSFET C25 cross-reference
Abstract: IRFR120ATF
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IRFR/U120A O-251 MOSFET C25 cross-reference IRFR120ATF | |
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Contextual Info: IRFR/U210A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V |
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IRFR/U210A | |
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Contextual Info: IRFR/U130A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.11 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V |
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IRFR/U130A | |
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Contextual Info: IRFR/U130A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.11 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 13 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V |
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IRFR/U130A 13icing* O-252 | |
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Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U330A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 4.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V |
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IRFR/U330A | |
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Contextual Info: IRFR/U420A A d van ced Power MOSFET FEATURES BVdss = 500 V ♦ Avalanche Rugged Technology = 3.0Q ♦ Rugged Gate Oxide Technology ^DS on ♦ Lower Input Capacitance lD = 2.3 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: |
OCR Scan |
IRFR/U420A | |
IRFR110AContextual Info: IRFR/U110A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V |
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IRFR/U110A O-252 IRFR110A | |
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Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U430A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.5Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V |
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IRFR/U430A | |
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Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U224A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.1Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V |
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IRFR/U224A | |
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Contextual Info: IRFR/U034A A d van ced Power MOSFET FEATURES B^dss - ♦ Avalanche Rugged Technology 60 V 0.04Q ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 23 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 60V |
OCR Scan |
IRFR/U034A | |
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Contextual Info: IRFR/U024A A d van ced Power MOSFET FEATURES B^dss - 60 V ♦ Avalanche Rugged Technology 0.07Q ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 15 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 60V |
OCR Scan |
IRFR/U024A | |
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Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U420A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.3 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V |
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IRFR/U420A | |
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Contextual Info: IRFR/U224A Advanced Power MOSFET FEATURES BVdss = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD 1-1 ^ 3.8 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V |
OCR Scan |
IRFR/U224A | |
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Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U214A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 2.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.2 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V |
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IRFR/U214A | |
U214Contextual Info: IRFR/U214A Advanced Power MOSFET FEATURES B V dss = 250 V ♦ Avalanche Rugged Technology ^DS on = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 2 .0 Q 2 .2 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (M ax.) @ V DS = 250V |
OCR Scan |
IRFR/U214A U214 | |
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Contextual Info: IRFR/U310A Advanced Power MOSFET FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology RDS on = 3.6 Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 1.7 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current : 10 µA (Max.) @ VDS = 400V |
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IRFR/U310A | |
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Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U320A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V |
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IRFR/U320A | |
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Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U310A FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.6Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 1.7 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V |
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IRFR/U310A | |
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Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR/U034A FEATURES BVDSS = 60 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.04Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 23 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V |
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IRFR/U034A | |