IRFR224 Search Results

IRFR224B

Abstract: IRFU224B
Contextual Info: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

1RFR224

Abstract: AN-994 IRFR224 IRFU224 1RFU224
Contextual Info: International S Rectifier PD-9.600A IRFR224 IRFU224 HEXFET P ow er M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224) Available in Tape & Reel Fast Switching Ease of Paralleling

95237

Contextual Info: PD- 95237 IRFR224PbF IRFU224PbF • Lead-Free www.irf.com 1 05/05/04 IRFR/U224PbF 2 www.irf.com IRFR/U224PbF www.irf.com 3 IRFR/U224PbF 4 www.irf.com IRFR/U224PbF www.irf.com 5 IRFR/U224PbF 6 www.irf.com IRFR/U224PbF www.irf.com 7 IRFR/U224PbF D-Pak TO-252AA Package Outline

IRFR224

Contextual Info: IRFR224 A dvanced Power MOSFET FEATURES BVdss = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD 1-1 3.8 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 250V

Contextual Info: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224)

Contextual Info: International 1*»] Rectifier Mfl55452 QQISbflE DMM • INR IRFR224 IRFU224 HEXFET Power MOSFET • • • • • • • PD-9.600A bSE D _ INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR224 Straight Lead (IRFU224)

034AA

Contextual Info: IRFR224 Advanced Power MOSFET FEATURES BVdss = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD 1-1 ^ 3.8 A = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 250V

Vishay DaTE CODE

Abstract: EIA-541 IRFU120 R120 U120
Contextual Info: PD- 95237A IRFR224PbF IRFU224PbF • Lead-Free Document Number: 91271 12/03/04 www.vishay.com 1 IRFR/U224PbF Document Number: 91271 www.vishay.com 2 IRFR/U224PbF Document Number: 91271 www.vishay.com 3 IRFR/U224PbF Document Number: 91271 www.vishay.com 4 IRFR/U224PbF

Contextual Info: IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 1.1 Qg (Max.) (nC) 14 • Surface Mount (IRFR224, SiHFR224)

Contextual Info: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFR224 FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 1.1Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 3.8 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V

IRFR224

Abstract: IRFU224 SiHFR224 SiHFR224-E3
Contextual Info: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration RoHS* • Surface Mount (IRFR224/SiHFR224) COMPLIANT

VISHAY MARKING CODE

Contextual Info: PD- 95237A IRFR224PbF IRFU224PbF • Lead-Free Document Number: 91271 12/03/04 www.vishay.com 1 IRFR/U224PbF Document Number: 91271 www.vishay.com 2 IRFR/U224PbF Document Number: 91271 www.vishay.com 3 IRFR/U224PbF Document Number: 91271 www.vishay.com 4 IRFR/U224PbF

Contextual Info: N-CHANNEL POWER MOSFETS IRFR224/U224 FEATURES D -P A K • Low er R d s <o n • Improved inductive ruggedness » Fast sw itching tim es 2 • Rugged polysilicon gate cell structure « • Low er input cap acitance * •Extended sa fe operating area • Improved high tem perature reliability

Contextual Info: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224)

EIA-541

Abstract: IRFU120 R120 U120
Contextual Info: PD- 95237A IRFR224PbF IRFU224PbF • Lead-Free www.irf.com 1 12/03/04 IRFR/U224PbF 2 www.irf.com IRFR/U224PbF www.irf.com 3 IRFR/U224PbF 4 www.irf.com IRFR/U224PbF www.irf.com 5 IRFR/U224PbF 6 www.irf.com IRFR/U224PbF www.irf.com 7 IRFR/U224PbF D-Pak TO-252AA Package Outline

IRFR224

Abstract: IRFU224 SiHFR224 SiHFR224-E3 IRFU N-Channel Power MOSFETs
Contextual Info: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 1.1 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) 7.8 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 1.1 Qg (Max.) (nC) 14 • Surface Mount (IRFR224, SiHFR224)

Contextual Info: IRFR224 A d van ced Power MOSFET FEATURES B V DSS - 250 V ^D S o n = 1 .1 £2 ♦ Rugged Gate Oxide Technology o II ♦ Lower Input Capacitance CO bo ♦ Avalanche Rugged Technology A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 250V

Contextual Info: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224)

IRFR224B

Abstract: IRFU224B
Contextual Info: IRFR224B / IRFU224B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

SiHFR224TR-GE3

Contextual Info: IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR224, SiHFR224) • Straight Lead (IRFU224, SiHFU224)

SS*2n60b

Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
Contextual Info: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local