IRFR4 Search Results

IRFU4620

Abstract: IRFR4620TRPBF jedec package TO-252AA
Contextual Info: PD -96207A IRFR4620PbF IRFU4620PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D VDSS RDS on typ. max. ID G

Contextual Info: PD - 94356A IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement

9435

Contextual Info: PD - 94355 IRFR420A IRFU420A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 3.0Ω 3.3A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement

IRFR420B

Abstract: IRFU420B
Contextual Info: IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRFR430B / IRFU430B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

ifr420

Abstract: IFU420 IFR-420 irfr420
Contextual Info: IRFR420, IRFU420 Data Sheet 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

irfu420

Abstract: IRFR420 International Rectifier IRFR420 ir*420 AN-994
Contextual Info: International [^Rectifier PD-9.599A IRFR420 IRFU420 HEXFET P ow er M O S FE T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Surface Mount IRFR420 Straight Lead (IRFU420) Available in Tape & Reel Fast Switching Ease of Paralleling

SiHFU430A

Abstract: IRFR430A IRFU430A SiHFR430A SiHFR430A-E3 4.5V TO 100V INPUT REGULATOR
Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 1.7 Qg (Max.) (nC) 24 Qgs (nC) 6.5 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

IRFU420B

Abstract: IRFR420B
Contextual Info: IRFR420B / IRFU420B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

IRFR430

Contextual Info: IRFR430 A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 1 .5 Î 2 3 .5 A lD = ♦ Improved Gate Charge ♦ Extended Safe Operating Area D-PAK ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

Contextual Info: PD - 96924 AUTOMOTIVE MOSFET Features IRFR48Z IRFU48Z HEXFET Power MOSFET Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l D VDSS = 55V RDS on = 11mΩ G Description

Contextual Info: PD - 95374B IRFR4105ZPbF IRFU4105ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 24.5mΩ

Contextual Info: PD -96206A IRFR4615PbF IRFU4615PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits D VDSS RDS on typ. max. ID G

94356

Abstract: IRFR120 IRFR430A IRFU120 IRFU430A
Contextual Info: PD - 94356 IRFR430A IRFU430A SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple Drive Requirement

IRFR48Z

Abstract: IRFU48Z U120
Contextual Info: PD - 95950 AUTOMOTIVE MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Description IRFR48ZPbF IRFU48ZPbF HEXFET Power MOSFET D VDSS = 55V

IFR-410

Abstract: IFU410 IFR410 irfu410
Contextual Info: IRFR410, IRFU410 S E M I C O N D U C T O R 1.5A, 500V, 7.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.5A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

IRF Power MOSFET code marking

Abstract: IRF 50A EIA-541 IRFR430A IRFU430A R120 IRF 250V 100A 4.5v to 100v input regulator
Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free l PD -95076B IRFR430APbF IRFU430APbF HEXFET Power MOSFET VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple

Contextual Info: SMPS MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High speed power switching l Lead-Free PD -95076A IRFR430APbF IRFU430APbF HEXFET Power MOSFET l VDSS RDS(on) max ID 1.7Ω 5.0A 500V Benefits Low Gate Charge Qg results in Simple

4.5V TO 100V INPUT REGULATOR

Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 1.7 Qg (Max.) (nC) 24 Qgs (nC) 6.5 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

4.5V TO 100V INPUT REGULATOR

Contextual Info: IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 1.7 Qg (Max.) (nC) 24 Qgs (nC) 6.5 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

International Rectifier IRFR420

Contextual Info: IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) Available VGS = 10 V • Repetitive Avalanche Rated 3.0 RoHS* Qg (Max.) (nC) 19 • Surface Mount (IRFR420/SiHFR420)

Contextual Info: IRFR420, IRFU420, SiHFR420, SiHFU420 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR420, SiHFR420) • Straight Lead (IRFU420, SiHFU420)

Contextual Info: PD - 9.1302A International IO R Rectifier IRFR/U4105 HEXFET Power M O SFET Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) 150°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^D S (o n) = 0 .0 4 5 0 lD = 28A(D

U420

Abstract: ic 74148 74148 IC IRFR420 16-4 74148 IRFR422 irfr520 74148 free irfu420 of ic 74148
Contextual Info: SAM S UN G E L E C T R O N I C S INC b7E ]> • 7Tbm4B IRFR420/422 IRFU420/422 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • DD17Pbfi TST ■ SMGK D-PACK Lower R d s o n Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure