IRFS840 Search Results

IRFS840

Abstract: IRFS841 IRFS842 IRFS843
Contextual Info: SAMSUNG ELECTRONICS INC L.7E » • 7Tb4142 001730^ £k>5 ■ SM6K N-CHANNEL POWER MOSFETS IRFS840/841/842/843 FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s Fast sw itch in g tim es R ug ged polysilicon g a te cell stru ctu re

Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRFS840A Advanced Power MOSEET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A M a x. @ V DS = 500V ■ Lower RDS(ON) ^D S (o n ) = 0 . 8 5 Q.

mosfet yb

Abstract: IRFS840A
Contextual Info: Advanced IRFS840A P o w e r MOSFET — 500 V ^ D S o n = 0.85 •Si­ CD FEATURES D S S ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance o A valan che R ugged T ech n o lo g y ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting

Contextual Info: Advanced IRFS840A P o w e r M O SFEJT FEATURES B V Ds s “ • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ V DS = 500V

Contextual Info: IRFS840A Advanced Power MOSFET FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A Max. @ VDS = 500V ■ Lower Rps«*,) : 0.638 Q (Typ.)

IRFS840

Abstract: IRFS841 S-2501 DS10 diode
Contextual Info: N-CHANNEL POWER MOSFETS IRFS840/841 FEATURES • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

c1251c

Abstract: ic ls46a
Contextual Info: IRFS840A A dvanced Power MOSFET FEATURES b v dss - 500 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance _p ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA(Max.) @ VDS = 500V

IRF840B

Abstract: irf 940 IRFS840B
Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

2005Z

Abstract: IRF840B IRF series 2005 Z IRFS840B
Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET Features • • • • • • TO-220 TO-220F IRF Series IRFS Series 8.0A, 500V, RDS on = 0.8Ω @VGS = 10 V Low gate charge ( typical 41 nC) Low Crss ( typical 35 pF) Fast switching 100% avalanche tested Improved dv/dt capability

IRFS840B

Contextual Info: IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

Contextual Info: Advanced IRFS840A Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A M a x. @ V DS = 500V ■ Lower RDS(ON) ^D S (o n ) = 0 . 8 5 Q.

IRF840B

Abstract: 2005Z IRF840B free download irf 44 ns IRFS840B 3232A irf 100v 200A
Contextual Info: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

IRFS840A

Contextual Info: IRFS840A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS on = 0.85 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 10 µA (Max.) @ VDS = 500V

ei3026

Abstract: EI-3026 12 v 100w power amp diagram capacitor power factor correction schematic AN-42047 FEB112-001 APPLICATION OF IC 4007 GBU45 diode bridge bd1 4a 600V 1N4148 75V 150mA Diodes
Contextual Info: www.fairchildsemi.com FEB112-001 User’s Guide 100W Power Factor Corrected Supply Featured Fairchild Products: FAN7527B www.fairchildsemi.com/FEBsupport 2005 Fairchild Semiconductor Page 1 of 12 Rev 1.2 May 2005 www.fairchildsemi.com Contents 1. General Board Description .3

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Contextual Info: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3

IRFS9620

Abstract: IRFS9522 SSS6N60 IRFS820
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL Continued BVdss(V) ID(onKA) RDS(onXQ) Part Number 2.20 2.50 4.00 4.50 7.00 8.00 4.000 3.000 2.000 1.500 1.100 0.850 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 500.00 2.20 2.50 4.00 4.50 7.00

SSS60N

Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
Contextual Info: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00

irf1740

Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

std2n52

Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232