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    IRFS840A Search Results

    IRFS840A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS840A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFS840A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFS840A Fairchild Semiconductor Advanced Power MOSFET Scan PDF

    IRFS840A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFS840A

    Abstract: No abstract text available
    Text: IRFS840A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS on = 0.85 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 10 µA (Max.) @ VDS = 500V


    Original     		PDF IRFS840A O-220F IRFS840A

    Untitled

    Abstract: No abstract text available
    Text: IRF840B/IRFS840B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRF840B/IRFS840B IRFS840 IRFS840A IRFS840BT IRFS840B O-220F O-220F O-220F-3 AN-4121:

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRFS630A

    Abstract: IRFS634A SSS7N60B SSS2N60B FQPF11P06 FQPF13N10 SSS7N60B equivalent IRFS614B SSS10N60b fqpf16n15
    Text: Discrete MOSFETs TO-220F RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-220F N-Channel FQPF85N06 60 Single 0.01 - - - 86 53 62 FQPF65N06 60 Single 0.016 - - - 48 40 56


    Original     		PDF O-220F O-220F FQPF85N06 FQPF65N06 FQPF55N06 FQPF50N06 FQPF30N06 FQPF20N06 FQPF13N06 FQPF50N06L IRFS630A IRFS634A SSS7N60B SSS2N60B FQPF11P06 FQPF13N10 SSS7N60B equivalent IRFS614B SSS10N60b fqpf16n15

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    Untitled

    Abstract: No abstract text available
    Text: IRFS840A Advanced Power MOSEET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A M a x. @ V DS = 500V ■ Lower RDS(ON) ^D S (o n ) = 0 . 8 5 Q.


    OCR Scan     		PDF IRFS840A

    mosfet yb

    Abstract: IRFS840A
    Text: Advanced IRFS840A P o w e r MOSFET — 500 V ^ D S o n = 0.85 •Si­ CD FEATURES D S S ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance o A valan che R ugged T ech n o lo g y ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting


    OCR Scan     		PDF IRFS840A mosfet yb IRFS840A

    Untitled

    Abstract: No abstract text available
    Text: Advanced IRFS840A P o w e r M O SFEJT FEATURES B V Ds s “ • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10|iA (M ax.) @ V DS = 500V


    OCR Scan     		PDF IRFS840A

    Untitled

    Abstract: No abstract text available
    Text: IRFS840A Advanced Power MOSFET FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 m A Max. @ VDS = 500V ■ Lower Rps«*,) : 0.638 Q (Typ.)


    OCR Scan     		PDF IRFS840A

    c1251c

    Abstract: ic ls46a
    Text: IRFS840A A dvanced Power MOSFET FEATURES b v dss - 500 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance _p ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA(Max.) @ VDS = 500V


    OCR Scan     		PDF IRFS840A c1251c ic ls46a

    Untitled

    Abstract: No abstract text available
    Text: Advanced IRFS840A Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A M a x. @ V DS = 500V ■ Lower RDS(ON) ^D S (o n ) = 0 . 8 5 Q.


    OCR Scan     		PDF IRFS840A

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


    OCR Scan     		PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640

    SSD2104

    Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
    Text: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040


    OCR Scan     		PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A SSD2104 irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A

    1RFS840

    Abstract: 1RFS840A
    Text: 1RFS840A Advanced Power MOSFET FEATURES BVdss = 500 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA M ax. @ ■ Lower Ro^c*, : 0.638 £2 (Typ.)


    OCR Scan     		PDF 1RFS840A IRFS84 IRFS840A 1RFS840 1RFS840A