IRFY9130M Search Results
IRFY9130M Datasheets (4)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IRFY9130M | International Rectifier | 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY | Original | 163.53KB | 7 | ||
IRFY9130M |
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P-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package | Original | 11.08KB | 1 | ||
IRFY9130M | International Rectifier | Government / Space Products - High Reliability Power MOSFETS | Scan | 112.96KB | 1 | ||
IRFY9130M | International Rectifier | HEXFET Transistors | Scan | 632.47KB | 12 |
IRFY9130M Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRFY9130
Abstract: IRFY9130C IRFY9130CM IRFY9130M
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Original |
O-257AA) IRFY9130 IRFY9130M IRFY9130 IRFY9130, -140A/ -100V, O-257AA IRFY9130C IRFY9130CM IRFY9130M | |
IRFY9130MContextual Info: IRFY9130M Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 11.2A RDS(ON) = 0.3Ω Ω 1.0 (0.039) |
Original |
IRFY9130M O257AB O257AB O220M) 13-Sep-02 IRFY9130M | |
Contextual Info: IRFY9130M Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)9.3 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)37.2 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)45 Minimum Operating Temp (øC) |
Original |
IRFY9130M | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
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Original |
2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN |