IRFZ14 Search Results

Contextual Info: IRFZ14_RC, SiHFZ14_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRFZ14L

Abstract: IRFZ14S SiHFZ44L IRFZ14STRL SiHFZ14L SiHFZ14L-E3 SiHFZ14S SiHFZ14S-E3 SiHFZ14STL
Contextual Info: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single D2PAK (TO-263) G G D S Advanced Process Technology Surface Mount (IRFZ14S, SiHFZ14S)

irfz12

Contextual Info: SAMSUNG ELECTRONICS INC b4 E D 7 ^ 4 1 4 2 0012435 71T • SMGK N-CHANNEL POWER MOSFETS IRFZ14/15 IRFZ10/12 FEATURES • • • • • • • TO -220 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRFZ14PBF

Abstract: IRFZ14 SiHFZ14 SiHFZ14-E3
Contextual Info: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)

Contextual Info: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)

94959

Contextual Info: PD - 94959 IRFZ14PbF • Lead-Free www.irf.com 1 01/29/04 IRFZ14PbF 2 www.irf.com IRFZ14PbF www.irf.com 3 IRFZ14PbF 4 www.irf.com IRFZ14PbF www.irf.com 5 IRFZ14PbF 6 www.irf.com IRFZ14PbF TO-220AB Package Outline Dimensions are shown in millimeters inches

irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N

Contextual Info: IRFZ14S-L_RC, SiHFZ14S-L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

c416 diode

Abstract: IRFZ15 IRFZ14 C419
Contextual Info: HE D I MAS54S5 üOGÔbkM T | Data Sheet No. PD-9.507A IN TERNATI ONAL RE C TI FI ER T -3 t - it INTERNATIONAL RECTIFIER T O R AVALANCHE AND dv/dt RATED* 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRFZ14 IRFZ15 :r N-CHANNEL Product Summary 60 Volt, 0.20 Ohm HEXFET

IRFZ14

Abstract: IRFZ12 IRFZ10 IRFZ15
Contextual Info: IRFZ14/15 IRFZ10/12 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRFZ14S, SiHFZ14S) • Low-Profile Through-Hole (IRFZ14L, SiHFZ14L)

IRFZ14

Contextual Info: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration

IRFZ14A

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFZ14A FEATURES BVDSS = 60 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.14Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 10 A ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

IRFZ14

Abstract: SiHFZ14 SiHFZ14-E3 D. S. /N. 1677
Contextual Info: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: PD - 94959 IRFZ14PbF • Lead-Free Document Number: 91289 01/29/04 www.vishay.com 1 IRFZ14PbF Document Number: 91289 www.vishay.com 2 IRFZ14PbF Document Number: 91289 www.vishay.com 3 IRFZ14PbF Document Number: 91289 www.vishay.com 4 IRFZ14PbF Document Number: 91289

Contextual Info: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements

AN-994

Abstract: IRFZ14 IRFZ14L IRFZ14S
Contextual Info: PD - 9.890A IRFZ14S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ14S Low-profile through-hole (IRFZ14L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.20Ω G ID = 10A S Description Third Generation HEXFETs from International Rectifier

irfz14

Contextual Info: IRFZ14 A d van ced Power MOSFET FEATURES B^dss - 60 V ♦ Avalanche Rugged Technology 0.1 4Q ♦ Rugged Gate Oxide Technology ^DS on = ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -2 2 0 ♦ 175°C Operating Temperature

IRFZ14

Abstract: SiHFZ14 SiHFZ14-E3
Contextual Info: IRFZ14, SiHFZ14 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.20 Qg (Max.) (nC) 11 • Fast Switching Qgs (nC) 3.1 • Ease of Paralleling 5.8 • Simple Drive Requirements

IRFZ14L

Abstract: IRFZ14S IRFZ14STRL SiHFZ14L SiHFZ14S SiHFZ14STL SiHFZ44L
Contextual Info: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single DESCRIPTION D D2PAK (TO-263) I2PAK (TO-262) G G D S • Halogen-free According to IEC 61249-2-21

IRFZ14

Abstract: 1A N MOSFET T0-220
Contextual Info: PD-9.507B International S Rectifier IRFZ14 HEXFET P o w e r M O S F E T • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - V R DS on = 0 . 2 0 Q lD = 1 0 A Description

IRFZ14n

Abstract: IRFZ14 L548 MU55 international rectifier hr
Contextual Info: In te rn a tio n a l lO R R e c tifie r HEXFET Power MOSFET • • • • • 4 Ö5 5 M5 2 0015754 ObD * I N R PD-9.507B IRFZ14 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

SiHFZ44L

Contextual Info: IRFZ14S, IRFZ14L, SiHFZ14S, SiHFZ14L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) VGS = 10 V 0.20 Qg (Max.) (nC) 11 Qgs (nC) 3.1 Qgd (nC) 5.8 Configuration Single (TO-262) D2PAK G Advanced Process Technology Surface Mount (IRFZ14S/SiHFZ14S)