IRFZ2 Search Results

Contextual Info: IRFZ24S-L_RC, SiHFZ24S-L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: PD - 9.891A IRFZ24S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A S Description Third Generation HEXFETs from International Rectifier

Contextual Info: IRFZ24 Advanœ d Power MOSFET FEATURES B V DSS = 60 V ♦ Avalanche Rugged Technology ^ D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -220 ♦ 175°C Operating Temperature

irfz22

Abstract: IRFZ20/FI
Contextual Info: ZETEX SEMICONDUCTORS TSD D ^70370 0005S41 ZETBj T 1 95D 05541 D T*- 7 9 -H N-channel enhancement mode vertical D M O S FET IRFZ20 IRFZ22 ADVANCED INFORMATION FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

irf*24n

Abstract: current regulator IRFZ24N IRFZ24N equivalent IRF (10A) 55V IRFZ24N
Contextual Info: PD - 91354A IRFZ24N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.07Ω G Description ID = 17A S Fifth Generation HEXFET ® power MOSFETs from

mosfet ir 250 n

Contextual Info: IRFZ24 Advanced Power MOSFET FEATURES B ^ dss - 60 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

Contextual Info: IRFZ24A Advanced Power MOSFET FEATURES B ^ dss - 60 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

AN-994

Abstract: IRFZ24V IRFZ24VL IRFZ24VS
Contextual Info: PD - 94182 IRFZ24VS IRFZ24VL HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications D VDSS = 60V RDS on = 60mΩ

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology

Contextual Info: PD - 95623 IRFZ24VPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description l D l VDSS = 60V

Contextual Info: IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 50 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 17 Qgs (nC) 9.0 Qgd (nC) 3.0 Configuration Single Extremely Low RDS(on) Compact Plastic Package Fast Switching

AN-994

Abstract: IRFZ24N IRFZ24NL IRFZ24NS
Contextual Info: PD - 95147 IRFZ24NS/LPbF l l l l l l l Advanced Process Technology Surface Mount IRFZ24NS Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.07Ω

AN609

Abstract: IRFZ20
Contextual Info: IRFZ20_RC, SiHFZ20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

AN-994

Abstract: IRFZ24V IRFZ24VL IRFZ24VS IRL3103L
Contextual Info: PD - 95524 IRFZ24VSPbF IRFZ24VLPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology

irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N

IRFZ20

Abstract: SiHFZ20
Contextual Info: IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 50 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 17 Qgs (nC) 9.0 Qgd (nC) 3.0 Configuration Single Extremely Low RDS(on) Compact Plastic Package Fast Switching

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology

IRFZ24V

Contextual Info: PD - 94156 IRFZ24V HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V l RDS on = 60mΩ

AN-994

Abstract: IRFZ24N IRFZ24NL IRFZ24NS current regulator IRFZ24N l3103
Contextual Info: PD - 95147 IRFZ24NS/LPbF l l l l l l l Advanced Process Technology Surface Mount IRFZ24NS Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.07Ω

IRFP150N equivalent

Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
Contextual Info: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N

Contextual Info: IRFZ20, SiHFZ20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 50 RDS(on) () VGS = 10 V 0.10 Qg (Max.) (nC) 17 Qgs (nC) 9.0 Qgd (nC) 3.0 Configuration Single Extremely Low RDS(on) Compact Plastic Package Fast Switching