IRFZ24N Search Results

irf*24n

Abstract: current regulator IRFZ24N IRFZ24N equivalent IRF (10A) 55V IRFZ24N
Contextual Info: PD - 91354A IRFZ24N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.07Ω G Description ID = 17A S Fifth Generation HEXFET ® power MOSFETs from

AN-994

Abstract: IRFZ24N IRFZ24NL IRFZ24NS
Contextual Info: PD - 95147 IRFZ24NS/LPbF l l l l l l l Advanced Process Technology Surface Mount IRFZ24NS Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.07Ω

irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N

AN-994

Abstract: IRFZ24N IRFZ24NL IRFZ24NS current regulator IRFZ24N l3103
Contextual Info: PD - 95147 IRFZ24NS/LPbF l l l l l l l Advanced Process Technology Surface Mount IRFZ24NS Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.07Ω

IRFP150N equivalent

Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
Contextual Info: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N

Contextual Info: PD - 9.1355B IRFZ24NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ24NS Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.07Ω G ID = 17A S

Td 68

Contextual Info: IRFZ24NS/NL Power MOSFET VDSS = 55V, RDS on = 0.07 mohm, ID = 17 A D G S Symbol N Channel ELECTRICAL CHARACTERISICS at Parameter Tj = 25 C Maximum. Unless stated Otherwise Drain to Source Breakdown Voltage Drain to Source Leakage Current Gate to Source Leakage Current

ST DIODE C427

Abstract: c427 diode z24n st c426 fz24n c429 diode
Contextual Info: International IOR Rectifier P D - 9 .1 3 5 5 B IRFZ24NS/L HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRFZ24NS Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated

IRFZ24N

Abstract: IRFZ24N equivalent IRF1010
Contextual Info: PD - 9.1354 IRFZ24N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.07Ω ID = 17A Description Fifth Generation HEXFETs from International Rectifier

IRF1010

Abstract: IRFZ24N
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1354 IRFZ24N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.07Ω ID = 17A Description

Contextual Info: PD - 94990 IRFZ24NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D l VDSS = 55V RDS on = 0.07Ω G ID = 17A S Fifth Generation HEXFET ® power MOSFETs from

Contextual Info: PD - 94990 IRFZ24NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D l VDSS = 55V RDS on = 0.07! G ID = 17A S Fifth Generation HEXFET Æ power MOSFETs from

AN-994

Abstract: IRFZ24N IRFZ24NL IRFZ24NS
Contextual Info: PD - 9.1355B IRFZ24NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ24NS Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.07Ω G ID = 17A S

Contextual Info: PD - 94990 IRFZ24NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D l VDSS = 55V RDS on = 0.07Ω G ID = 17A S Fifth Generation HEXFET ® power MOSFETs from

IRFZ24NS

Contextual Info: PD - 9 .1355B International IÖR Rectifier IRFZ24NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRFZ24NS • Low-profilethrough-hole(IRFZ24NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss

DIODE e2l

Contextual Info: P D - 9 .1 3 5 5 B International IG R Rectifier IRFZ24NS/L HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRFZ24NS Low-profilethrough-hole(IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated

cd c422

Abstract: c423 diode 91354A diode c424 c422
Contextual Info: PD - 9.1354A International Iö R Rectifier IRFZ24N H E XFE T Power M O S F E T • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 55V RDS on Id = = 0 .07Q 17A Description

IRF (10A) 55V

Abstract: hexfet power mosfets international rectifier IRF1010 IRFZ24N ISR9246
Contextual Info: PD - 91354A International IOR Rectifier IRFZ24N HEXFET Power MOSFET • • • • • A dvanced Process Technology Dynam ic dv/dt Rating 1 7 5 °C O perating Tem perature Fast Switching Fully Avalanche Rated V dss = 5 5 V RüS on Description F ifth Id =

IRF (10A) 55V

Abstract: IRFZ24N current regulator IRFZ24N
Contextual Info: PD - 91354A IRFZ24N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.07Ω G Description ID = 17A S Fifth Generation HEXFET ® power MOSFETs from

AN-994

Abstract: IRFZ24N IRFZ24NL IRFZ24NS
Contextual Info: PD - 9.1355B IRFZ24NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ24NS Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.07Ω G ID = 17A S

60v 10a p type mosfet

Abstract: irfz24npbf
Contextual Info: PD - 94990 IRFZ24NPbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D l VDSS = 55V RDS on = 0.07Ω G ID = 17A S Fifth Generation HEXFET ® power MOSFETs from

Contextual Info: PD - 95147 IRFZ24NS/LPbF l l l l l l l Advanced Process Technology Surface Mount IRFZ24NS Low-profile through-hole (IRFZ24NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.07Ω

C6000

Abstract: IRFZ24N SLMA002 TPS56300 TPS56300PWP TPS56300PWPR msl 9350 equivalent of transistor C6000
Contextual Info: TPS56300 DUALĆOUTPUT LOWĆINPUTĆVOLTAGE DSP POWER SUPPLY CONTROLLER WITH SEQUENCING SLVS261B − DECEMBER 1999 − SEPTEMBER 2000 D 2.8 V – 5.5 V Input Voltage Range D Programmable Dual Output Controller D D D D D D D D PWP PACKAGE TOP VIEW Supports Popular DSP and Microcontroller

IRFZ24N

Abstract: SLMA002 TPS56300 TPS56302 TPS56302PWP TPS56302PWPR
Contextual Info: TPS56302 DUALĆOUTPUT LOWĆINPUTĆVOLTAGE DSP POWER SUPPLY CONTROLLER WITH SEQUENCING SLVS289A − MARCH 2000 − REVISED OCTOBER 2000 D 2.8 V – 5.5 V Input Voltage Range D Programmable Dual Output Controller D D D D D D D D PWP PowerPAD PACKAGE TOP VIEW