IRFZ3 Search Results

Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration

Contextual Info: PD - 94944 IRFZ34PbF • Lead-Free Document Number: 91290 01/14/04 www.vishay.com 1 IRFZ34PbF Document Number: 91290 www.vishay.com 2 IRFZ34PbF Document Number: 91290 www.vishay.com 3 IRFZ34PbF Document Number: 91290 www.vishay.com 4 IRFZ34PbF Document Number: 91290

Contextual Info: IRFZ34A A d van ced Power MOSFET FEATURES B V DSS - 60 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 4 Î2 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ 175°C Operating Temperature

AN-994

Abstract: IRF530S IRFZ34N IRFZ34NL IRFZ34NS IRL3103L
Contextual Info: PD - 95571 Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free l l l l l l l IRFZ34NSPbF IRFZ34NLPbF HEXFET Power MOSFET D RDS(on) = 0.040Ω

Contextual Info: PD - 94042A IRFZ34V HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description l D VDSS = 60V RDS on = 28mΩ

f1010

Contextual Info: PD - 94868 IRFZ34VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 28mΩ

Contextual Info: PD -9.1672 International IC R Rectifier IRFZ34E HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling Description V dss = 60V ^D S o n =

international rectifier NE 22

Abstract: f1010 n-channel mosfet irfz34e N17A f1010 IR
Contextual Info: PD - 9.1672A In terna tional TOR Rectifier IRFZ34E HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling Description V dss = 60 V

1RFZ34

Abstract: STM TO-220 marking IRFZ34 IRFZ34 international
Contextual Info: International ioR Rectifier HEXFET Power MOSFET • • • • • 4Û5S452 0Q1577Ö STM « I N R PD-9.509B IRFZ34 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

3l4 diode

Contextual Info: International llQRlRectifier PD- 9.1311 IRFZ34NS P R E L IM IN A R Y HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating T emperature Fast Switching Fully Avalanche Rated V dss = 5 5 V

Contextual Info: PD - 9.1672A International IS R Rectifier IRFZ34E HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling D escription Voss= 60V

T39 diode

Contextual Info: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage,

AN-994

Abstract: IRF530S IRFZ34NS
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1311 IRFZ34NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description VDSS = 55V RDS on = 0.040Ω

IRFZ34 Datasheet

Abstract: irfz34 SiHFZ34 SiHFZ34-E3 irfz34 mosfets
Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration

AN-994

Abstract: IRFZ34 IRFZ34L IRFZ34S
Contextual Info: PD - 9.892A IRFZ34S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ34S Low-profile through-hole (IRFZ34L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.050Ω G ID = 30A S Description Third Generation HEXFETs from International Rectifier

IRFZ34

Abstract: IRFZ34 mosfet HI POWER 30A MOSFET
Contextual Info: PD-9.509B International IrêËI Rectifier IRFZ34 HEXFET P o w e r M O S F E T • • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V pss _ 60V ^D S on - 0 - 0 5 0 n 30A Description

Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 60 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.050 46 Qgs (nC) 11 Qgd (nC) 22 Configuration Single D2PAK (TO-262) G G D

IRFZ34 mosfet

Abstract: IRFZ34 ic regulator 48v 30a
Contextual Info: IRFZ34 A dvanced Power MOSFET FEATURES B V DSS — 60 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 4 Q 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

IRFZ30

Abstract: c427 diode JI32 c429 diode IRFZ32 c429 diode c428 c428 transistor 100-C transistor c429
Contextual Info: H E D I 4ÖSS4SE INTERNATIONAL üQQflb7ö Ì | Data Sheet No. PD-9.414B 'I'-Sf-K R E C T IF IER INTERNATIONAL RECTIFIER IÖR IRFZ30 HEXFETTRAiMSISTORS IRFZ32 l\l-Channel 5 0 VOLT POWER MOSFETs Product Summary 50 Volt, 0.05 Ohm HEXFET T0-220AB Plastic Package

IRFZ34A

Contextual Info: IRFZ34A A dvanced Power MOSFET FEATURES B V DSS — 60 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 4 Q 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

Contextual Info: IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount • Low-Profile Through-Hole (IRFZ34L, SiHFZ34L) • 175 °C Operating Temperature

IRF34N

Abstract: 1RFZ34N 1RFZ34 dioda rectifier IRFZ34N V145M 100MS IRF1010 VIQR9246 dioda 12B
Contextual Info: PD-9.1278A • I If c W I 1 1 U V I V 1 i d l llORlRectifier PRELIMINARY _ IRFZ34 N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling V dss

irfz34

Contextual Info: IRFZ34, SiHFZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 46 • Fast Switching Qgs (nC) 11 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration

IRF P CHANNEL MOSFET

Abstract: ot 112 HEXFET Power MOSFET IRF 042
Contextual Info: PD - 94789 IRFZ34EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 0.042Ω G Description Fifth Generation HEXFETs from International Rectifier