IRFZ34N MOSFET Search Results

IRFZ34N

Abstract: for irfz34n IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRFZ34N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.040 Ω ID = 26A Description

Contextual Info: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling V dss = 55V RDS on = 0.040Q

mosfet IRFZ34N

Abstract: IRFZ34N IRFZ34N MOSFET irfz34n equivalent for irfz34n lt 200 diode driver IRF1010 INTERNATIONAL RECTIFIER B469 irfz34n mosfets
Contextual Info: PD - _ IRFZ34N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.040 Ω ID = 26A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing

f1010

Abstract: D0247 IRFZ34N 2D 1002 diode for irfz34n f1010 IR T6A marking M6SS IRFZ34N MOSFET
Contextual Info: PD -9.1276B International IOR Rectifier IRFZ34N PRELIMINARY H EXFET Power M O S F E T • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Vdss = 55V

IRFZ34N MOSFET

Abstract: IOR 438 irfz34n mosfets for irfz34n mosfet LT 438
Contextual Info: PD -9.1276C International I G R Rectifier IRFZ34N HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Voss = 55 V R üS o n =

IRFZ34N

Abstract: IRF 250
Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier

Contextual Info: IRFZ34N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V)20 I(D) Max. (A)26# I(DM) Max. (A) Pulsed I(D)18 @Temp (øC)100# IDM Max (@25øC Amb)100# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)56# Minimum Operating Temp (øC)-55õ

irfz34n equivalent

Abstract: IRFZ34N IRFZ34N MOSFET *rfz34n
Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier

irfz34n

Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier

IRFZ34N

Abstract: irfz34n equivalent irf 405
Contextual Info: PD -9.1276C IRFZ34N HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description l D l VDSS = 55V RDS on = 0.040Ω G ID = 29A S Fifth Generation HEXFETs from International Rectifier

IRF34N

Abstract: 1RFZ34N 1RFZ34 dioda rectifier IRFZ34N V145M 100MS IRF1010 VIQR9246 dioda 12B
Contextual Info: PD-9.1278A • I If c W I 1 1 U V I V 1 i d l llORlRectifier PRELIMINARY _ IRFZ34 N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling V dss

irf1010 applications

Abstract: IRF1010 IRFZ34N for irfz34n IRF1010N IRFZ34 replacement guide irfz34 mosfets *rfz34n
Contextual Info: International T \ ¥7 T t t ic 1 H R e d i f i e r U E M l j l l 1 1 F !^ OT« INTERNA TIO NAL R E C T IF IE R C O R P. A PPLIC A TIO N S ENG. 233 KANSAS ST., EL SEGUNDO, CA 90245 TEL 310 322-3331 FAX (310)322-3332 IR ’S NEW FIFTH GENERATION PO W ER MOSFETS:

1RFPC50

Abstract: 1RFPC50LC IRF840LC IRlz24n IRFz44n IRF540n 1RFPc
Contextual Info: _ I n t e r n a t i o n a l R e c t if ie r HEXFET Power MOSFETS VIWQOSS Drakvto-Sourc* BreakdownVokaga Vota Pot Numbar *0 S M OnSM» Rotatami (Oh"») loConlinuoui * mc DnfciCunwK Qg Total MuThaimal GataCharga AvAtanct

IRFZ44N complementary

Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
Contextual Info: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55

to262 pcb footprint

Abstract: AN-994 IRFZ34N IRFZ34NL IRFZ34NS IRL3103L
Contextual Info: PD - 95571 l l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free IRFZ34NSPbF IRFZ34NLPbF HEXFET Power MOSFET D RDS(on) = 0.040Ω

irfz34n equivalent

Abstract: diode c331
Contextual Info: PD - 9.1674A International IQ R Rectifier IRFIZ34E HEXFET Power MOSFET • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS ® • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated VDSS = 60V R d s o d

AN-994

Abstract: IRFR4105 IRFU120 IRFU4105 IRFZ34N R120
Contextual Info: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier

AN-994

Abstract: IRFR4105 IRFU120 IRFU4105 IRFZ34N U120 10mhz mosfet IRF Power MOSFET code marking
Contextual Info: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier

HRF3205 equivalent

Abstract: IRFP064N equivalent IRF3205 equivalent IRFz44n equivalent irf3205 ups irf3710 equivalent HUF75337P3 equivalent IRFZ48N equivalent irfp064n HUF75343P3 equivalent
Contextual Info: 458 LC00004.1 UFET Linecard 9/28/99 11:49 AM Page 1 HOLE PUNCH THIS EDGE UltraFET MOSFET Update Fall 1999 NEW RELEASES NEW PRODUCTS “ON DECK” Polarity N/P BVDSS Volts Id Amps rDS ON @ 4.5V/5V Ohms rDS(ON) @ 10V Ohms Package X-REF D/E ? Comments HUF75545P3

AN-994

Abstract: IRF530S IRFZ34N IRFZ34NL IRFZ34NS irfz34n 2430
Contextual Info: PD - 95571 l l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free IRFZ34NSPbF IRFZ34NLPbF HEXFET Power MOSFET D RDS(on) = 0.040Ω

Contextual Info: PD - 9 .16 74 A International IÖ R Rectifier IRFIZ34E HEXFET Power MOSFET Advanced Process Technology Isolated Package V dss = High Voltage Isolation = 2.5K V R M S CD Sink to Lead C reepage Dist. = 4.8m m ^D S on = Fully Avalanche Rated 60 V 0.042Î2

irfz34n equivalent

Abstract: IRFZ34N
Contextual Info: PD - 94840 IRFIZ34NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description

Contextual Info: PD - 94840 IRFIZ34NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.04Ω G ID = 21A S Description

IRFZ34N

Abstract: irfz34n equivalent 840g
Contextual Info: PD - 94839 IRFIZ34EPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 0.042Ω G ID = 21A S Description