IRFZ44NS D2PAK Search Results

Contextual Info: IRFZ44NS IRFZ44NL TO-263 TO-262 l l l l l l Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description The D2Pak is a surface mount power package capable of

z44n

Contextual Info: PD - 9.1315A International IQ R Rectifier IRFZ44NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRFZ44NS • Low-profilethrough-hole(IRFZ44NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V

IRFZ44N

Abstract: AN-994 IRFZ44NL IRFZ44NS
Contextual Info: PD - 94153 Advanced Process Technology Surface Mount IRFZ44NS l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ44NS IRFZ44NL l HEXFET Power MOSFET l Advanced HEXFET® Power MOSFETs from International

1RFZ44N

Abstract: TR C458 surface mount IRFZ44N 1RFZ44
Contextual Info: PD - 9.1315A International IG R Rectifier IRFZ44NS/L HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 55 V

AN-994

Abstract: IRFZ44NL IRFZ44NS
Contextual Info: PD - 94153 Advanced Process Technology Surface Mount IRFZ44NS l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ44NS IRFZ44NL l HEXFET Power MOSFET l Advanced HEXFET® Power MOSFETs from International

Contextual Info: PD - 94153 Advanced Process Technology Surface Mount IRFZ44NS l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ44NS IRFZ44NL l HEXFET Power MOSFET l Advanced HEXFET® Power MOSFETs from International

surface mount IRFZ44N

Abstract: AN-994 IRFZ44N IRFZ44NL IRFZ44NS IRFZ44N APPLICATION NOTE irfz44nsl
Contextual Info: PD - 9.1315A IRFZ44NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.022Ω G ID = 49A

IRFZ44NSPBF

Abstract: IRF (10A) 55V AN-994 IRFZ44NL IRFZ44NS IRL3103L 70aQ
Contextual Info: PD - 95124 l l l l l l l IRFZ44NSPbF IRFZ44NLPbF Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from International

IRFZ44NS

Contextual Info: International ^Rectifier PD91315 IRFZ44NS preliminary HEXFET Power MOSFET • • • • • • Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier

IRF (10A) 55V

Abstract: AN-994 IRFZ44NL IRFZ44NS IRL3103L
Contextual Info: PD - 95124 l l l l l l l IRFZ44NSPbF IRFZ44NLPbF Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET Power MOSFETs from International

Contextual Info: PD - 95124 l l l l l l l IRFZ44NSPbF IRFZ44NLPbF Advanced Process Technology Surface Mount IRFZ44NS Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description HEXFET Power MOSFET D VDSS = 55V

IRFZ44NS D2PAK

Contextual Info: IRFZ44NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters inches D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L O T CO D E 8 0 2 4 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " IN T E R N AT IO N AL

lg smd transistor LF

Abstract: d25V
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode standard level fleld-effect power transistor In a surface mounting plastic envelope using ’trench’ technology. The device features very

IRFZ44NS

Abstract: saf* philips
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a surface mounting plastic envelope using ’trench’ technology. The device features very

LL110

Abstract: IRF7423 IRFR1205 equivalent IRLR2905 SMD 3F smd transistor IRLR024N IRF7389 irf7309 irlms4502 IRFR5410
Contextual Info: International Rectifier Existing Product The HEXFET SMD Navigator NEW UPCOMING Products Products released to to be released production in last 6- within next 3-4 9 months months Potential products no current plans. see bus.mgmt. Effective 6 October, 1999

LL110

Abstract: IRF7207 irf7105 IRF7342 IRFR024N IRF7317 IRL32 iRF 0420 irFR5305 IRFR9024
Contextual Info: International Rectifier Existing Product The HEXFET SMD Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months Potential products no current plans. see bus.mgmt. Dual SO-8 SOT-223 DPak Effective 14 June, 1999

irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N

sot23 BS170

Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120

ixfh26n60q

Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY

IRF1010E

Abstract: irf 4110 irfbf30 IRFPF50 irf7333 IRFP044N IRF4905 equivalent Irf520N IRFD110 IRF7606
Contextual Info: HEXFET Power MOSFETs www.irf.com ID ID V BR DSS Continuous RΘ PD Drain-to-Source R DS(on) Continuous On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown 70° Part Resistance Voltage Resistance 1 Dissipation 1 25°C (A) (V) (Ω ) (°C/W)

9137

Abstract: surface mount IRFZ44N IRFK3D450 IRFK4H054 IRLI640G IRFBg30 equivalent hexfet power mosfets international rectifier IRFP260 IRC540 equivalent irf 3250
Contextual Info: HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) Rθ A Max Thermal Resistance (°C/W) P Max.

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

IRF734

Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
Contextual Info: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

IRGKI165F06

Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
Contextual Info: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)