IRFZ48N MOSFET Search Results

IRFZ48N

Abstract: IRFz48N MOSFET
Contextual Info: PD - 9.1406A International IÖR Rectifier IRFZ48N HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Fifth Generation HEXFETsfrom International Rectifier

IRFZ48N

Abstract: IRFz48N MOSFET n-channel mosfet transistor equivalent IRFZ48N IRFZ48N equivalent mosfet transistor TRANSISTOR mosfet
Contextual Info: isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFZ48N FEATURES •Drain Current –ID= 64A@ TC=25℃ ·Drain Source Voltage: VDSS= 55V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.014Ω(Max) ·Fast Switching DESCRIPTION

IRFZ48N

Contextual Info: PD - 9.1406A International IGR Rectifier IRFZ48N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss = 55 V ^ D S o n = 0.0160 lD = 64A Description

IRFz48N MOSFET

Abstract: IRFZ48N equivalent IRFZ48N
Contextual Info: PD - 9.1406A IRFZ48N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 64A S Fifth Generation HEXFETs from International Rectifier

IRFz48N MOSFET

Abstract: IRFZ48N
Contextual Info: PD - IRFZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G Description ID = 53A S Fifth Generation HEXFETs from International Rectifier

IRFZ48N

Abstract: equivalent IRFZ48N
Contextual Info: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: International S Rectifier PD 9.1406 IRFZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175°C Operating Tem perature Fast Switching V dss = 55 V ^D S on = 0 . 0 1 6 D Fully Avalanche Rated Id = 5 3 A Description utilize advanced processing techniques to achieve

IRFz48N MOSFET

Abstract: equivalent IRFZ48N IRFZ48N IRFZ48N equivalent Mosfet IRFZ48N
Contextual Info: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International

Contextual Info: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International

IRFZ44N complementary

Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
Contextual Info: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55

HRF3205 equivalent

Abstract: IRFP064N equivalent IRF3205 equivalent IRFz44n equivalent irf3205 ups irf3710 equivalent HUF75337P3 equivalent IRFZ48N equivalent irfp064n HUF75343P3 equivalent
Contextual Info: 458 LC00004.1 UFET Linecard 9/28/99 11:49 AM Page 1 HOLE PUNCH THIS EDGE UltraFET MOSFET Update Fall 1999 NEW RELEASES NEW PRODUCTS “ON DECK” Polarity N/P BVDSS Volts Id Amps rDS ON @ 4.5V/5V Ohms rDS(ON) @ 10V Ohms Package X-REF D/E ? Comments HUF75545P3

pn junction diode

Abstract: p-n junction diode IRFZ48N
Contextual Info: IRFIZ48NPbF Electrical Characteristics @ TJ = 25°C unless otherwise specified RDS(on) VGS(th) g fs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance

c366

Abstract: C369 c368 IRFP048N
Contextual Info: PD - 9.1409A International IQ R Rectifier IRFP048N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 55V ^D S o n = 0.016Q lD = 64A Description

Contextual Info: PD 9.1409 International S Rectifier IRFP048N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V ^DS on = Id = 0.016Q 62A Description Fifth Generation HEXFETs from International Rectifier

equivalent IRFZ48N

Abstract: IRFZ48N IRFZ48N equivalent
Contextual Info: PD -94835 IRFIZ48NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.016Ω G ID = 40A S Description

IRFIZ48N

Abstract: IRF1010 IRFI840G IRFZ48N
Contextual Info: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description

IRFP048N

Abstract: IRFPE30 IRFZ48N
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1409 IRFP048N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G ID = 62A

Contextual Info: PRELIMINARY International M R Rectifier PD 9.1408 IRFZ48NS HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description VDSS = 55V

Contextual Info: PD -94835 IRFIZ48NPbF HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 0.016Ω G ID = 40A S Description

IRFZ48N

Abstract: equivalent IRFZ48N IRFZ48N equivalent
Contextual Info: PD -94835 IRFIZ48NPbF l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 0.016Ω G ID = 40A S Description

IRF1010

Abstract: IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V

IRFz48N MOSFET

Abstract: IRF1010 IRFI840G IRFIZ48N IRFZ48N IRFZ48N equivalent
Contextual Info: PD 9.1407 IRFIZ48N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D U VDSS = 55V RDS on = 0.016Ω G ID = 36A S Description

TO247AC

Abstract: IRFz48N MOSFET DM marking code equivalent IRFZ48N IRFP048N IRFPE30 IRFZ48N st l 9302
Contextual Info: PD 9.1409 IRFP048N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.016Ω G ID = 62A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 9.1408A International IQ R Rectifier IRFZ48NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRFZ48NS • Low-profilethrough-hole(IRFZ48NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V