Untitled
Abstract: No abstract text available
Text: PD - 90886B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω ID -11A 0.3Ω -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for
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90886B
IRHN9130
IRHN93130
MIL-STD-750,
MlL-STD-750,
-480A/
-100V,
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100V Single P-Channel HEXFET MOSFET
Abstract: IRHN9130
Text: Provisional Data Sheet No. PD-9.886 IRHN9130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.30Ω International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold
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IRHN9130
100V Single P-Channel HEXFET MOSFET
IRHN9130
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IRF P CHANNEL MOSFET 10A 100V
Abstract: pcb 480a charge amplifier IRHN9130 IRHN93130
Text: PD - 90886A IRHN9130 IRHN93130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.3Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
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0886A
IRHN9130
IRHN93130
IRF P CHANNEL MOSFET 10A 100V
pcb 480a charge amplifier
IRHN9130
IRHN93130
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IRHN9130
Abstract: IRHN93130
Text: PD - 90886C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for
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90886C
IRHN9130
IRHN93130
-480A/
-100V,
MIL-STD-750,
MlL-STD-750,
IRHN9130
IRHN93130
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Untitled
Abstract: No abstract text available
Text: PD - 90886C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-1 IRHN9130 100V, P-CHANNEL RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHN9130 100K Rads (Si) IRHN93130 300K Rads (Si) RDS(on) 0.3Ω 0.3Ω ID -11A -11A International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for
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90886C
IRHN9130
IRHN93130
-480A/Â
-100V,
MIL-STD-750,
MlL-STD-750,
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IRHN9130
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.886 IRHN9130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω , RAD HARD HEXFET -100 Volt, 0.30Ω Product Summary International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold
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IRHN9130
IRHN9130
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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2N6764 JANTX
Abstract: 91447 IR2113L
Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450
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IRH7054
IRH7130
IRH7150
IRH7230
IRH7250
IRH7250SE
IRHF7330SE
IRHF7430SE
IRH7450
IRH7450SE
2N6764 JANTX
91447
IR2113L
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2N6782 JANTX
Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE
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IRH7054
Oct-96
IRH7150
IRH7250
IRH7450SE
Nov-96
IRH8054
2N6782 JANTX
2N6758 JANTX
2N6756 JANTX
2N6766 JANTX
2N6792 JANTX
2N6796U
60022
2N7236
2n6806 jantx
2N6770 JANTX
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Untitled
Abstract: No abstract text available
Text: Into f nQ t iO nQ I I R Rectifier Provisional Data Sheet No. PD-9.886A IRHN9130 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR p -c h a n n e l RAD HARD Product Sum m ary -100Volt,0.30Q, RAD HARD H EX FET International Rectifier’s P-channel RA D H A RD tech
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IRHN9130
-100Volt
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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JANSR2N7261
Abstract: No abstract text available
Text: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
JANSR2N7261
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Untitled
Abstract: No abstract text available
Text: I n t e r n a t io n a l R e c t if ie r Government and Space Products Part Numb« Wffl bvdss Vota ROS(on) (Ohm) ID* TC«25" 4A"P*) Iq O TolOO* (Amp») Total Dow Riling Rids (St) Pq O Tc»2P (Witts) Fu-ooDwnmd Numbtr _ _ _ _ _ _ _ -_ _ _ _ _ _ _ _ _ _ _
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHE9230
IRHN7054
IRHN8054
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H336
Abstract: h337 Rad Hard in MOSFET
Text: Data Sheet No. PD-9.886 INTERNATIONAL RECTIFIER I R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN913Q RAD HARD Product Summary -100 Volt, 0.30Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability
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IRHN913Q
1x105
1x1012
MIL-STD-750,
H-338
H336
h337
Rad Hard in MOSFET
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