IRHY67C30 Search Results
IRHY67C30 Price and Stock
Infineon Technologies AG IRHY67C30CSCSTransistor MOSFET N-Channel 600V 3.4A 3-Pin TO-257AA - Bulk (Alt: IRHY67C30CSCS) |
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IRHY67C30CSCS | Bulk | 111 Weeks | 50 |
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Infineon Technologies AG IRHY67C30CMSCS-14Transistor MOSFET N-Channel 600V 3.4A 3-Pin TO-257AA - Bulk (Alt: IRHY67C30CMSCS-14) |
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IRHY67C30CMSCS-14 | Bulk | 111 Weeks | 50 |
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Infineon Technologies AG IRHY67C30CMSCS-01Transistor MOSFET N-Channel 600V 3.4A 3-Pin TO-257AA - Bulk (Alt: IRHY67C30CMSCS-01) |
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IRHY67C30CMSCS-01 | Bulk | 111 Weeks | 50 |
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Infineon Technologies AG IRHY67C30CTransistor MOSFET N-Channel 600V 3.4A 3-Pin TO-257AA - Bulk (Alt: IRHY67C30C) |
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IRHY67C30C | Bulk | 111 Weeks | 10 |
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IRHY67C30 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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IRHY67C30CM | International Rectifier | Original | 198.2KB | 8 |
IRHY67C30 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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95837
Abstract: PD-95837 IRHY63C30CM IRHY67C30CM RG 2006 10A 600V
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Original |
PD-95837 O-257AA) IRHY67C30CM IRHY67C30CM IRHY63C30CM 90MeV/ 5M-1994. O-257AA. 95837 PD-95837 RG 2006 10A 600V | |
2N7599T3Contextual Info: PD-95837A 2N7599T3 IRHY67C30CM 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides |
Original |
PD-95837A 2N7599T3 IRHY67C30CM O-257AA) IRHY67C30CM IRHY63C30CM 90MeV/ O-257AA. MIL-PRF-19500 2N7599T3 | |
2n7599
Abstract: 95837 2N7599T3 IRHY67C30CM IRHY63C30CM irhy67c30
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Original |
PD-95837A 2N7599T3 IRHY67C30CM O-257AA) IRHY67C30CM IRHY63C30CM 90MeV/ O-257AA. MIL-PRF-19500 2n7599 95837 2N7599T3 irhy67c30 |